DN3125 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX RDS(ON) (max) IDSS (min) 250V * Die in wafer form. 20Ω 200mA Order Number / Package Die* DN3125NW Features Advanced DMOS Technology ❏ High input impedance These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. ❏ Low input capacitance ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications ❏ Normally-on switches ❏ Solid state relays ❏ Converters ❏ Linear amplifiers ❏ Constant current sources ❏ Power supply circuits ❏ Telecom Absolute Maximum Ratings Drain-to-Source Voltage BVDSX Drain-to-Gate Voltage BVDGX Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55°C to +150°C 12/13/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the 1 refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, DN3125 Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min BVDSX Drain-to-Souce Breakdown Voltage 250 VGS(OFF) Gate-to-Source OFF Voltage -1.5 ∆VGS(OFF) Typ Max Unit Conditions V VGS = -5.0V, ID = 100µA -3.5 V VDS = 15V, ID = 10µA Change in VGS(OFF) with Temperature 4.5 mV/°C VDS = 15V, ID = 10µA IGSS Gate Body Leakage Current 100 nA VGS = ±20V, VDS = 0V ID(OFF) Drain-to-Source Leakage Current 1.0 µA VGS = -5.0V, VDS = Max Rating 1.0 mA VGS = -5.0V, VDS = 0.8 Max Rating TA = 125°C mA VGS = 0V, VDS = 15V IDSS Saturated Drain-to-Source Current RDS(ON) Static Drain-to-Source ON-State Resistance 200 20 Ω 20 1.1 %/°C VGS = 0V, ID = 150mA VGS = -0.8V, ID = 50mA ∆RDS(ON) Change in RDS(ON) with Temperature GFS Forward Transconductance CISS Input Capacitance 60 120 COSS Common Source Output Capacitance 6.0 15 CRSS Reverse Transfer Capacitance 3.0 10 td(ON) Turn-ON Delay Time 10 tr Rise Time 15 td(OFF) Turn-OFF Delay Time 15 RGEN = 25Ω, tf Fall Time 20 VGS = 0V to -10V VSD Diode Forward Voltage Drop 1.8 trr Reverse Recovery Time Ω 150 mm pF VGS = 0V, ID = 150mA ID = 100mA, VDS=10V VGS = -5.0V, VDS = 25V, f =1.0Mhz VDD = 25V, ns 800 ID = 150mA, V VGS = -5.0V, ISD = 150mA ns VGS = -5.0V, ISD = 150mA Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 90% PULSE GENERATOR INPUT -10V 10% t(ON) td(ON) VDD 10% td(OFF) RL OUTPUT Rgen t(OFF) tr VDD tF D.U.T. INPUT 10% OUTPUT 0V 90% 90% 12/13/010 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 2 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com