DSS8110Y 100V LOW VCE(sat) NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Complementary PNP Type Available (DSS9110Y) Ultra Small Surface Mount Package “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free, "Green Device" (Note 2) • • • Case: SOT-363 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams (approximate) C SOT-363 C C E C C B B E Top View Pin-Out Top Device Symbol Ordering Information (Note 3) Product DSS8110Y-7 Notes: Marking ZN5 Reel size (inches) 7 Tape width (mm) 8mm Quantity per reel 3,000 1. No purposefully added lead. 2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. ZN5 Date Code Key Year Code Month Code 2010 X Jan 1 YM Marking Information 2011 Y Feb 2 DSS8110Y Document number: DS31679 Rev. 2 - 2 Mar 3 ZN5 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September) 2012 Z Apr 4 May 5 2013 A Jun 6 1 of 5 www.diodes.com Jul 7 2014 B Aug 8 Sep 9 2015 C Oct O Nov N Dec D October 2010 © Diodes Incorporated DSS8110Y Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current Base Current – Continuous Symbol VCBO VCEO VEBO IC ICM IB Value 120 100 5 1 3 0.3 Unit V V V A A A Symbol PD RθJA TJ, TSTG Value 625 200 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 4) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C Operating and Storage Temperature Range Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout. 0.7 10 Pw = 100µs IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (W) 0.6 0.5 0.4 0.3 0.2 DC Pw = 100ms 0.1 Pw = 10ms Pw = 1ms 0.01 RθJA = 200°C/W 0.1 0 1 0.001 0.1 0 50 100 150 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature 1,000 1 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 RθJA(t) = r(t) * RθJA RθJA = 180°C/W D = 0.05 D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DSS8110Y Document number: DS31679 Rev. 2 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 3 Transient Thermal Response 2 of 5 www.diodes.com 10 100 1,000 October 2010 © Diodes Incorporated DSS8110Y Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Symbol Min Typ Max Unit BVCBO BVCEO BVEBO 120 100 5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 100 50 100 100 V V V nA μA nA nA 150 150 100 80 ⎯ ⎯ ⎯ ⎯ ⎯ 500 ⎯ ⎯ V ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 40 120 200 mV 200 1.05 0.9 mΩ V V VCE = 10V, IC = 1mA VCE = 10V, IC = 250mA VCE = 10V, IC = 500mA VCE = 10V, IC = 1A IC = 100mA, IB = 10mA IC = 500mA, IB = 50mA IC = 1A, IB = 100mA IC = 1A, IB = 100mA IC = 1A, IB = 100mA VCE = 10V, IC = 1A ⎯ ⎯ 7.5 ⎯ pF MHz VCB = 10V, f = 1.0MHz VCE = 10V, IC = 50mA, f = 100MHz Collector Cutoff Current ICBO Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 5) ICES IEBO DC Current Gain hFE Collector-Emitter Saturation Voltage VCE(sat) Collector-Emitter Saturation Resistance Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product RCE(sat) VBE(sat) VBE(on) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Cobo fT ⎯ 100 Test Condition IC = 100μA, IE = 0 IC = 10mA, IB = 0 IE = 100μA, IC = 0 VCB = 80V, IE = 0 VCB = 80V, IE = 0, TA = 150°C VCE = 80V, VBE = 0 VEB = 4V, IC = 0 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. Notes: 500 1.0 400 IB = 5mA hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) 1.2 0.8 IB = 4mA IB = 3mA 0.6 IB = 2mA 0.4 0 T A = 125°C 300 T A = 85°C T A = 25°C 200 100 0.2 T A = 150°C T A = -55°C IB = 1mA 0 2 4 6 8 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage DSS8110Y Document number: DS31679 Rev. 2 - 2 3 of 5 www.diodes.com 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 5 Typical DC Current Gain vs. Collector Current October 2010 © Diodes Incorporated DSS8110Y VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 0.1 TA = 150°C TA = 85°C TA = 125°C TA = 25°C T A = -55°C 0.01 0.0001 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 VCE = 10V 1.0 0.8 TA = -55°C 0.6 T A = 25°C 0.4 T A = 85°C TA = 125°C 0.2 TA = 150°C 0 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 7 Typical Base-Emitter Turn-On Voltage vs. Collector Current 1.2 IC/IB = 10 1.0 0.8 T A = -55°C 0.6 TA = 25°C 0.4 TA = 85°C TA = 125°C 0.2 0 0.1 T A = 150°C 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Base-Emitter Saturation Voltage vs. Collector Current Package Outline Dimensions A SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° α All Dimensions in mm B C H K J DSS8110Y Document number: DS31679 Rev. 2 - 2 M D F L 4 of 5 www.diodes.com October 2010 © Diodes Incorporated DSS8110Y Suggested Pad Layout C2 Z C2 Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 C1 G Y X IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com DSS8110Y Document number: DS31679 Rev. 2 - 2 5 of 5 www.diodes.com October 2010 © Diodes Incorporated