DST857BDJ DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Complementary NPN Type Available (DST847BDJ) Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) “Green” Device (Note 2) Ultra Small Package Case: SOT-963 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0027 grams (approximate) • • • SOT-963 Top View Device Schematic Ordering Information Device DST857BDJ-7 Notes: Packaging SOT-963 Shipping 10,000/Tape & Reel 1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com Marking Information TB DST857BDJ Document number: DS32037 Rev. 1 - 2 TB = Product Type Marking Code 1 of 5 www.diodes.com January 2010 © Diodes Incorporated DST857BDJ Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 3) Symbol VCBO VCEO VEBO IC Value -50 -45 -5.0 -100 Unit V V V mA Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient (Note 3) Operating and Storage Temperature Range Notes: Symbol PD RθJA TJ, TSTG Value 300 417 -55 to +150 Unit mW °C/W °C 3. Device mounted on FR-4 PCB with minimum recommended pad layout. r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 370°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 1 Transient Thermal Response 100 1,000 0.4 1,000 Single Pulse RθJA(t) = r(t) * RθJA RθJA = 370°C/W 100 PD, POWER DISSIPATION (W) P(pk), PEAK TRANSIENT POWER (W) 10 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 10 1 0.1 0.3 Note 3 0.2 0.1 0 0.00001 0.001 0.1 10 1,000 t1, PULSE DURATION TIME (s) Fig. 2 Single Pulse Maximum Power Dissipation DST857BDJ Document number: DS32037 Rev. 1 - 2 2 of 5 www.diodes.com 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (°C) Fig. 3 Power Dissipation vs. Ambient Temperature January 2010 © Diodes Incorporated DST857BDJ Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Symbol V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ICBO hFE Min -50 -50 -45 -6 100 200 Typical -100 -90 -65 -8.5 340 330 Max -15 470 Collector-Emitter Saturation Voltage VCE(sat) - -70 -300 -175 -500 Base-Emitter Saturation Voltage VBE(sat) - -760 -885 -1000 -1100 Base-Emitter Voltage VBE(on) -600 -670 -715 -780 -850 fT 100 340 - Cobo - 2.0 - DC Current Gain Current Gain-Bandwidth Product Output Capacitance Notes: Test Condition IC = -10μA, IB = 0 IC = -10μA, IB = 0 IC = -1mA, IB = 0 IE = -1μA, IC = 0 VCB = -30V IC = -10μA, VCE = -5V IC = -2.0mA, VCE = -5V IC = -10mA, IB = -0.5mA mV IC = -100mA, IB = -5.0mA IC = -10mA, IB = -0.5mA mV IC = -100mA, IB = -5.0mA IC = -2.0mA, VCE = -5V mV IC = -10mA, VCE = -5V VCE = -5V, IC = -10mA, MHz f = 100MHz pF VCB = -10V, f = 1.0MHz 4. Short duration pulse test used to minimize self-heating effect. 600 0.18 IB = -2mA IB = -1.6mA 0.14 T A = 125°C -hFE, DC CURRENT GAIN IB = -1.2mA IB = -1mA 0.10 IB = -0.8mA IB = -0.6mA 0.08 IB = -0.4mA 0.06 0.04 VCE = 5V 500 IB = -1.4mA 0.12 T A = 150°C 550 IB = -1.8mA 0.16 -IC, COLLECTOR CURRENT (A) Unit V V V V nA 450 TA = 85°C 400 350 TA = 25°C 300 250 200 TA = -55°C 150 IB = -0.2mA 100 0.02 0 0 1 2 3 4 5 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage DST857BDJ Document number: DS32037 Rev. 1 - 2 3 of 5 www.diodes.com 50 0 0 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current January 2010 © Diodes Incorporated DST857BDJ 1 1 IC/IB = 20 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 TA = 150°C 0.1 T A = 125°C T A = 85°C T A = 25°C TA = -55°C T A = 125°C TA = 85°C TA = 25°C TA = -55°C 0.01 0.1 0.01 0.1 1.0 1.2 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Collector-Emitter Saturation Voltage vs. Collector Current -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) TA = 150°C 0.1 VCE = -5V 0.8 0.6 TA = -55°C T A = 25°C T A = 150°C 0.4 0.2 0.1 TA = 125°C TA = 85°C 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Base-Emitter Turn-On Voltage vs. Collector Current Gain = 10 1.0 0.8 TA = -55°C TA = 25°C 0.6 T A = 150°C T A = 125°C 0.4 T A = 85°C 0.2 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Base-Emitter Saturation Voltage vs. Collector Current Package Outline Dimensions D e1 L E E1 e b (6 places) c SOT-963 Dim Min Max Typ A 0.40 0.50 0.45 A1 0 0.05 C 0.120 0.180 0.150 D 0.95 1.05 1.00 E 0.95 1.05 1.00 E1 0.75 0.85 0.80 L 0.05 0.15 0.10 b 0.10 0.20 0.15 e 0.35 Typ e1 0.70 Typ All Dimensions in mm A A1 DST857BDJ Document number: DS32037 Rev. 1 - 2 4 of 5 www.diodes.com January 2010 © Diodes Incorporated DST857BDJ Suggest Pad Layout C C Dimensions Value (in mm) C 0.350 X 0.200 Y 0.200 Y1 1.100 Y1 Y (6X) X (6X) IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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