E 75N075 HEXFET z z z z z Dynamic dv/dt Rating 175°C Operating Temperature Fast switching Ease of Paralleling Simple Drive Requirements ® Power MOSFET VDSS = 75V ID25 = 75A RDS(ON) = 13.0 mΩ Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Pin1–Gate Pin2–Drain Pin3–Source Absolute Maximum Ratings Parameter Max. Continuous Drain Current, VGS@10V 75 ID@TC=100°C Continuous Drain Current, VGS@10V 60 Pulsed Drain Current 300 ID@TC=25°C IDM ② Units ① A 200 W Linear Derating Factor 1.5 W/°C VGS Gate-to-Source Voltage ±20 V EAR Single Pulse Avalanche Energy 23 mJ dv/dt Peak Diode Recovery dv/dt 5.9 V/ns TJ TSTG Operating Junction and Storage Temperature Range PD@TC=25°C Power Dissipation ③ ④ –55 to +175 ْ°C 300(1.6mm from case) Soldering Temperature, for 10 seconds 10 Ibf . in(1.1N . m) Mounting Torque,6-32 or M3 screw Thermal Resistance Parameter Min. Typ. Max. RθJC Junction-to-case — — 0.65 RθCS Case-to-Sink, Flat, Greased Surface — 0.50 — RθJA Junction-to-Ambient — — 62 1 Units ْ°C /W E 75N075 HEXFET ® Power MOSFET Electrical Characteristics @TJ=25 °ْ C (unless otherwise specified) Parameter Min. Typ. Drain-to-Source Breakdown Voltage 75 — — Breakdown Voltage Temp. Coefficient — 0.074 — RDS(on) Static Drain-to-Source On-resistance — — 13.0 VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS=VGS, ID=250μA gfs Forward Transconductance 20 — — S VDS=25V,ID=40A IDSS Drain-to-Source Leakage current — — 25 — — 250 Gate-to-Source Forward leakage — — 100 Gate-to-Source Reverse leakage — — -100 Qg Total Gate Charge — — 160 Qgs Gate-to-Source charge — — 29 Qgd Gate-to-Drain ("Miller") charge — — 55 td(on) tr td(off) tf Turn-on Delay Time — 13 — Rise Time — 64 — Turn-Off Delay Time — 49 — Fall Time — 48 — LD Internal Drain Inductance — 4.5 — LS Internal Source Inductance — 7.5 — Ciss Input Capacitance — 3820 — Coss Output Capacitance — 610 — Crss Reverse Transfer Capacitance — 130 — V(BR)DSS △V(BR)DSS/ △T J IGSS Max. Units V Test Conditions VGS=0V,ID=250uA V/°C Reference to 25°C,ID=1mA mΩ VGS=10V,ID=40A μA nA ⑤ ⑤ VDS=75V,VGS=0V VDS=60V,VGS=0V,TJ=150°C VGS=20V VGS=-20V ID=40A nC VDS=60V VGS=10V See Fig.6 and 13⑤ nS VDD=38V ID=40A RG=2.5Ω VGS=10V See Figure 10⑤ Between lead, 6mm(0.25in.) nH from package and center of die contact VGS=0V pF VDS=25V f=1.0MHZ See Figure 5 Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) . ISM Pulsed Source Current (Body Diode) ② . VSD Min. Typ. Max. — — 75 Units Test Conditions A MOSFET symbol showing the integral reverse p-n junction diode. — — 300 Diode Forward Voltage — — 1.3 V TJ=25°C,IS=40A,VGS=0V trr Reverse Recovery Time — 100 150 nS Qrr Reverse Recovery Charge — 410 610 nC TJ=25°C,IF=40A di/dt=100A/μs ⑤ ton Forward Turn-on Time Notes: ⑤ Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) ① Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. ② Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) ③ 2 ④ Starting TJ = 25°C, L = 370mH, RG = 25Ω, IAS = 40A, VGS=10V (See Figure 12) ISD ≤ 40A, di/dt ≤ 300A/μs, VDD ≤ V(BR)DSS,TJ ≤ 175°C ⑤ Pulse width ≤ 400μs; duty cycle ≤ 2%.