ETC ECG014B

ECG014
The Communications Edge TM
0.2 Watt, High Linearity InGaP HBT Amplifier
Product Description
Product Features
• 50 – 2000 MHz
Functional Diagram
The ECG014 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve performance over a broad range with +39
dBm OIP3 and +23 dBm of compressed 1-dB power and is
housed in an industry standard SOT-89 SMT package. All
devices are 100% RF and DC tested.
• +23 dBm P1dB
• +39 dBm Output IP3
• 20.5 dB Gain @ 900 MHz
• 17.6 dB Gain @ 1900 MHz
• Single Positive Supply (+8V)
GND
4
The product is targeted for use as a gain block/driver
amplifier for various current and next generation wireless
technologies such as GPRS, GSM and CDMA, where high
linearity and medium power is required. In addition, the
ECG014 will work for numerous other applications within
the 50 to 2000 MHz frequency range.
• SOT-89 SMT Package
Applications
• Mobile Infrastructure
• Defense/Homeland Security
Specifications (1)
Parameters
Product Information
1
2
3
RF IN
GND
RF OUT
ECG014B
Typical Performance (5)
Units
Min
MHz
MHz
dB
dBm
dBm
MHz
dB
dB
dB
dBm
dBm
50
Operational Bandwidth
Test Frequency
Gain
Output P1dB
Output OIP3 (2)
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
IS-95A Channel Power
@ -45 dBc ACPR, 1900 MHz
Noise Figure
Operating Current Range (3)
Device Voltage (4)
18.5
+22
+38
17
+36.5
dBm
dB
mA
V
Typ
Max
Parameters
2000
Frequency
S21 – Gain
S11 – Input R.L.
S22 – Output R.L.
Output P1dB
Output IP3 (2)
IS-95A Channel Power
900
20.5
+23
+39
1900
17.6
17
7.4
+23
+38
Units
@ -45 dBc ACPR, 1900 MHz
Noise Figure
Supply Bias
Typical
MHz
dB
dB
dB
dBm
dBm
900
20.5
-20
-9.5
+22.8
+39
1900
17.6
-17
-7.4
+23
+38
dBm
+17
+16
dB
5
5.2
+8 V @ 100 mA
5. Typical parameters reflect performance in a tuned application circuit: Supply Voltage = +8 V, Icc =
100 mA, +25° C, Rbias = 30 Ω.
+16
85
5.2
100
5
135
1. Test conditions unless otherwise noted: 25 °C, Vsupply = +8V, in tuned application circuit with
Rbias = 30 Ω.
2. 3OIP measured with two tones at an output power of +9 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. The tuned
application circuit is tuned for optimum ACPR performance. An improvement in OIP3 of 2 to 3
dB can be achieved for tuning for optimum OIP3 (with slightly degraded ACPR performance).
3. This corresponds to the quiescent current or operating current under small-signal conditions.
4. This device requires a minimum 7 V power supply through a dropping resistor. 8 V and 30 ohms
are recommended for proper operation. Operation of the device directly to a 5 V supply could lead
to thermal damage to the device.
Absolute Maximum Rating
Parameters
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
Rating
-40 to +85 °C
-65 to +150 °C
+12 dBm
+6 V
150 mA
1.5 W
+250 °C
Ordering Information
Part No.
Description
ECG014B
ECG014B-PCB900
ECG014B-PCB1900
0.2 Watt, High Linearity InGaP HBT Amplifier
900 MHz Evaluation Board
1900 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
August 2004
ECG014
The Communications Edge TM
0.2 Watt, High Linearity InGaP HBT Amplifier
Product Information
Typical Device Data
S-parameters (Vdevice = +5V, Icc = 100 mA, 25° C, unmatched 50 ohm system)
S11
0.
4
2.
0
0
3.
0
4.
0
4.
5.0
5.0
0.2
0.2
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0.2
10.0
0
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.2
20
0.4
10.0
0
Gain (dB)
0.8
0
3.
25
Swp Max
2.01283GHz
6
0.
2.
0
DB(GMax)
1.0
1.0
0.8
6
0.
DB(|S[2,1]|)
S22
Swp Max
2.01283GHz
0.
4
Gain / Maximum Stable Gain
30
-10.0
-3
.0
Swp Min
0.01483GHz
.0
-2
-1.0
-0
.6
.0
-2
2
-1.0
1.5
-0.8
1
Frequency (GHz)
-0
.6
0.5
.4
-0
-0.8
-4
.0
-5.
0
0
2
-3
.0
.4
-0
10
-0.
-4
.0
-5.
0
2
-0.
-10.0
15
Swp Min
0.01483GHz
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a tuned circuit for a particular frequency, it is expected that
actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The impedance plots are shown from 50 – 2500 MHz, with markers placed at 0.25 – 2 GHz in 0.25 GHz increments.
S-Parameters (Vdevice = +5 V, Icc = 100 mA, T = 25° C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
50
100
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2500
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
-5.21
-4.92
-4.72
-4.31
-4.10
-4.19
-4.63
-5.64
-7.84
-13.52
-19.89
-6.99
-2.84
-1.18
-0.78
-158.20
-170.08
-177.73
173.22
163.26
152.57
140.41
126.43
109.08
83.27
-85.25
-131.98
-160.75
177.40
167.87
27.34
25.32
24.15
22.43
20.91
19.68
18.82
18.35
18.13
18.12
17.78
16.44
14.09
10.90
9.28
141.96
144.95
138.50
118.30
100.56
85.04
69.98
54.85
38.12
17.54
-7.75
-37.07
-64.48
-86.11
-96.04
-32.11
-31.61
-31.37
-30.63
-30.32
-29.78
-29.74
-29.31
-29.86
-31.16
-34.99
-34.48
-29.33
-26.64
-25.96
16.29
9.45
6.88
7.98
5.52
2.65
-2.18
-11.26
-26.72
-52.52
-105.12
161.53
106.22
75.52
66.16
-6.58
-7.49
-7.96
-8.46
-8.81
-9.07
-9.12
-8.95
-8.04
-6.16
-3.43
-1.36
-0.69
-0.93
-1.28
-132.30
-157.02
-171.72
178.73
174.06
171.40
169.67
170.98
175.14
179.09
176.43
164.56
149.67
136.25
130.16
Device S-parameters are available for download off of the website at: http://www.wj.com
Application Circuit PC Board Layout
C12
C7
C9
C8
Circuit Board Material: .014” Getek, 4 - layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning shunt capacitors.
The markers and vias are spaced in .050” increments.
C7/C8 are for 900 MHz matching circuits and C9/C12 are for 1900 MHz matching circuits.
.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
August 2004
ECG014
The Communications Edge TM
0.2 Watt, High Linearity InGaP HBT Amplifier
Product Information
900 MHz Application Circuit (ECG014B-PCB900)
Typical RF Performance at 25°C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3∗
8v
C = .1uF
900 MHz
20.5 dB
-20 dB
-9.5 dB
+22.8 dBm
RES
ID=R3
R=220 Ohm
Channel Power
PORT
P=1
Z=50 Ohm
+17 dBm
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure
Device Voltage
Quiescent Current
CAP
ID=C6
C=56 pF
IND
ID=L1
L=33 nH
SUBCKT
ECG014 900 MHz
CAP
ID=C7
C=5.6 pF
5 dB
+5 V
100 mA
S22 vs. Frequency
0
-5
-5
20
-15
-20
-25
+25°C
+85°C
-30
+85°C
-40°C
-35
-40°C
+25°C
900
920
940
-40
840
860
Frequency (MHz)
Noise Figure vs. Frequency
-15
880
900
920
940
860
880
+85°C
900
920
940
-40
-45
+25°C
22
+85°C
-40°C
-50
-55
+25°C
-60
+85°C
-65
-40°C
-70
860
Frequency (MHz)
880
900
920
940
12
13
Frequency (MHz)
OIP3 vs. Frequency
+25°C, +9 dBm / tone
42
940
ACPR vs. Channel Power
23
20
840
920
IS-95, 9 Ch. Fw d, ±885 KHz offset, 30 KHz Meas. BW, 900 MHz
21
-40°C
900
Frequency (MHz)
A C P R (d B c )
P 1 d B (d B m )
+25°C
880
-40°C
P1 dB vs. Frequency
4
860
+85°C
-25
840
24
2
+25°C
-20
25
6
N F (d B )
-10
Frequency (MHz)
8
42
S 2 2 (d B )
S 1 1 (d B )
S 2 1 (d B )
22
0
840
RES
ID=R5
R=50 Ohm
S11 vs. Frequency
-10
880
CAP
ID=C5
C=56 pF
PORT
P=2
Z=50 Ohm
CAP
ID=C8
C=0.8 pF
0
24
860
CAP
ID=C1
C=56 pF
C7 is placed at silkscreen marker ‘C’ or center of component placed at 5.6 deg. @ 900 MHz away from pin 1. C8 is
placed at 22 deg. @ 900 MHz away from pin 3.
S21 vs. Frequency
16
840
CAP
ID=C3
CAP
ID=C2
C=1000 pF
CAP
ID=C4
C=56 pF
RES
ID=R4
R=22 Ohm
∗ Please see note 2 on page 1.
18
RES
ID=R1
R=30 Ohm
8.2v zener
IND
ID=L2
L=33 nH
+39 dBm
(+9 dBm / tone, 1 MHz spacing)
RES
ID=R2
R=390 Ohm
14
15
16
17
18
Output Channel Power (dBm)
OIP3 vs. Temperature
Fre. = 900, 901 MHz, +9 dBm / tone
OIP3 vs. Output Power
Freq. = 900, 901 MHz, +25°C
42
40
38
36
34
32
30
840
40
O IP 3 (d B m )
O IP 3 (d B m )
OIP 3 (dB m )
40
38
36
34
860
880
900
Frequency (MHz)
920
940
32
-40
38
36
34
32
-15
10
35
Temperature (°C)
60
85
6
7
8
9
10 11 12
Output Power (dBm)
13
14
.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
August 2004
ECG014
The Communications Edge TM
0.2 Watt, High Linearity InGaP HBT Amplifier
Product Information
1900 MHz Application Circuit (ECG014B-PCB1900)
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3∗
(+9 dBm / tone, 1 MHz spacing)
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure
Device Voltage
Quiescent Current
1900 MHz
17.6 dB
-17 dB
-7.4 dB
+23 dBm
+38 dBm
PORT
P=1
Z=50 Ohm
+16 dBm
CAP
ID=C6
C=56 pF
CAP
ID=C4
C=56 pF
RES
ID=R4
R=22 Ohm
5.2 dB
+5 V
100 mA
IND
ID=L1
L=15 nH
IND
ID=L3
L=1 nH
SUBCKT
ECG014 1.9GHz
CAP
ID=C10
C=0.7 pF
C9 placed at silkscreen marker ‘8” or center of component placed at 39 deg. @ 1900 MHz away from pin 1.
C12 is placed at silkscreen marker ‘I” or center of component placed at 43 deg. @ 1.9 GHz away from pin 1.
S11 vs. Frequency
S22 vs. Frequency
-2
-10
-4
+85°C
-6
-40°C
0
+25°C
-15
+85°C
-20
-40°C
0
1850 1870 1890 1910 1930 1950 1970 1990
S 2 2 (d B )
S 1 1 (d B )
-5
+25°C
+85°C
-8
-40°C
-10
-25
1850 1870 1890 1910 1930 1950 1970 1990
Frequency (MHz)
-12
1850 1870 1890 1910 1930 1950 1970 1990
Frequency (MHz)
ACPR vs. Channel Power
P1 dB vs. Frequency
7
IS-95, 9 Ch. Fwd. ±885 KHz offset, 30 KHz Meas. BW, 1900 MHz
-35
25
6
-40
+25°C
2
+85°C
1
-40°C
A C P R (d B c )
3
P 1 d B (d B m )
23
4
21
19
+25°C
+85°C
17
0
1850 1870 1890 1910 1930 1950 1970 1990
-40°C
15
1850 1870 1890 1910 1930 1950 1970 1990
Frequency (MHz)
Frequency (MHz)
42
O IP 3 (d B m )
36
34
Frequency (MHz)
-60
10
11
12
13
14
15
16
17
18
Output Power (dBm)
OIP3 vs. Output Power
Freq. = 1900, 1901 MHz, 25°C
42
40
38
36
38
36
34
34
32
1850 1870 1890 1910 1930 1950 1970 1990
-55
-70
40
38
-50
OIP3 vs. Temperature
freq. = 1900, 1901 MHz, +9 dBm / tone
OIP3 vs. Frequency
+25°C, +9 dBm / tone
40
-45
-65
O IP 3 (d B m )
42
+25°C
Frequency (MHz)
Noise Figure vs. Frequency
5
CAP
ID=C5
C=56 pF
PORT
P=2
Z=50 Ohm
20
10
CAP
ID=C1
C=56 pF
CAP
ID=C7
C=1.5 pF
0
15
CAP
ID=C3
CAP
ID=C2
C=1000 pF
25
5
N F (d B )
RES
ID=R1
R=30 Ohm
8.2v zener
IND
ID=L2
L=15 nH
S21 vs. Frequency
S 2 1 (d B )
RES
ID=R2
R=390 Ohm
RES
ID=R3
R=220 Ohm
∗ Please see note 2 on page 1.
OIP3 (dBm)
C = .1uF
8v
Typical RF Performance at 25°C
32
32
-40
-15
10
35
60
6
85
Temperature (°C)
7
8
9
10
11
12
13
14
Output Power (dBm)
.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
August 2004
ECG014
The Communications Edge TM
0.2 Watt, High Linearity InGaP HBT Amplifier
Product Information
Outline Drawing
Product Marking
The component will be marked with an “E014”
designator with an alphanumeric lot code on the
top surface of the package.
Tape and reel specifications for this part are
located on the website in the “Application Notes”
section.
ESD / MSL Information
ESD Rating:
Value:
Test:
Standard:
Class 1B
Passes between 500 and 1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +235° C convection reflow
Standard:
JEDEC Standard J-STD-020
Mounting Config. Notes
Land Pattern
Thermal Specifications
Parameter
Rating
Operating Case Temperature
Thermal Resistance, Rth (1)
Junction Temperature, Tjc (2)
-40 to +85° C
128° C / W
149° C
Notes:
1. The thermal resistance is referenced from the
junction-to-case at a case temperature of 85° C.
2. This corresponds to the typical biasing condition of
+5V, 100 mA at an 85° C case temperature. A
minimum MTTF of 1 million hours is achieved for
junction temperatures below 247° C.
1. Ground / thermal vias are critical for the proper
performance of this device. Vias should use
a .35mm (#80 / .0135”) diameter drill and have a
final plated thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and
outer layers near the part to ensure optimal
thermal performance.
3. Mounting screws can be added near the part to
fasten the board to a heatsink. Ensure that the
ground / thermal via region contacts the heatsink.
4. Do not put solder mask on the backside of the
PC board in the region where the board contacts
the heatsink.
5. RF trace width depends upon the PC board
material and construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches).
Angles are in degrees.
MTTF vs. GND Tab Temperature
100000
10000
1000
100
60
70
80
90
100
110
120
Tab Temperature (°C)
.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
August 2004