Single N-channel MOSFET ELM13416CA-S ■General description ■Features ELM13416CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and operation with gate voltages as low as 1.8V and internal ESD protection is included. • • • • • • Vds=20V Id=6.5A (Vgs=4.5V) Rds(on) < 22mΩ (Vgs=4.5V) Rds(on) < 26mΩ (Vgs=2.5V) Rds(on) < 34mΩ (Vgs=1.8V) ESD protected ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C Continuous drain current Symbol Vds Limit 20 Unit V Vgs ±8 V Ta=70°C Pulsed drain current Idm Ta=25°C Ta=70°C Power dissipation 6.5 Id Pd Junction and storage temperature range Tj, Tstg Note A 5.2 30 1.4 0.9 -55 to 150 A 3 W 2 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol t≤10s Maximum junction-to-ambient Maximum junction-to-lead Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. 70 Max. 90 Unit °C/W Note 1 100 63 125 80 °C/W °C/W 1, 4 ■Circuit SOT-23(TOP VIEW) 3 1 2 D Pin No. Pin name 1 2 GATE SOURCE 3 DRAIN G S 5- 1 Single N-channel MOSFET ELM13416CA-S ■Electrical characteristics Parameter Symbol Condition Min. Typ. Ta=25°C Max. Unit STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=20V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±8V Gate threshold voltage On state drain current V 1 Tj=55°C 5 μA ±10 μA 0.7 1.1 V A 16 22 22 30 18 21 50 26 34 Is=1A, Vgs=0V 0.62 1.00 2 V A Ciss Coss Crss 1650 Vgs=0V, Vds=10V, f=1MHz 1295 160 87 pF pF pF Rg Vgs=0V, Vds=0V, f=1MHz 1.8 kΩ 10.0 nC 4.2 2.6 nC nC 280.00 328.00 3.76 ns ns ns 2.24 31 6.8 ns ns nC Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Vgs=4.5V, Id=6.5A Static drain-source on-resistance 20 Rds(on) Forward transconductance Gfs Diode forward voltage Max. body-diode continuous current Vsd Is 0.4 30 Tj=125°C Vgs=2.5V, Id=5.5A Vgs=1.8V, Id=5A Vds=5V, Id=6.5A mΩ S DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Qg Gate-source charge Gate-drain charge Qgs Qgd Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge NOTE : Vgs=4.5V, Vds=10V, Id=6.5A td(on) tr Vgs=4.5V, Vds=10V td(off) Rl=1.54Ω, Rgen=3Ω tf trr Qrr If=6.5A, dl/dt=100A/μs If=6.5A, dl/dt=100A/μs 41 1. The value of Rθja is measured with the device mounted on 1in2 FR-4 board of 2oz. Copper, in still air environment with Ta =25°C. The value in any given application depends on the user's specific board design. 2. The power dissipation Pd is based on Tj(Max)=150°C, using 10s junction-to-ambient thermal resistance. 3. Repetitive rating, pulse width limited by junction temperature Tj(Max)=150°C. Ratings are based on low frequency and duty cycles to keep initial Tj=25°C. 4. The Rθja is the sum of the thermal impedence from junction to lead Rθjl and lead to ambient. 5. The static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max. 6. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper, assuming a maximum junction temperature of Tj(Max)=150°C. The SOA curve provides a single pulse rating. 5- 2 Single N-channel MOSFET AO3416 ELM13416CA-S ■Typical electrical and thermal characteristics TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 2.5V 25 20 20 4.5V 15 ID(A) ID (A) 1.8V 3.1V 15 VGS=1.5V 10 10 25�C 0 0 0 1 2 3 4 0 5 0.5 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 30 Normalized On-Resistance 1.6 25 RDS(ON) (mΩ Ω) 125�C 5 5 VGS=1.8V 20 VGS=2.5V 15 VGS=4.5V VGS=2.5V ID=5.5A 1.4 VGS=1.8V ID=5A 1.2 17 5 2 VGS=4.5V10 1 ID=6.5A 0.8 10 0 2 0 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 4 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 60 1.0E+01 ID=6.5A 1.0E+00 50 40 1.0E-01 40 125�C 30 IS (A) RDS(ON) (mΩ Ω) VDS=5V 1.0E-02 125�C 25�C 1.0E-03 20 1.0E-04 25�C 1.0E-05 10 0 0.0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 5- 3 1.0 Single N-channel MOSFET AO3416 ELM13416CA-S TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1800 5 VDS=10V ID=6.5A 1400 Capacitance (pF) VGS (Volts) 4 1600 3 2 Ciss 1200 1000 800 600 400 1 Coss 200 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 0 12 10µs RDS(ON) limited 20 100µs 1ms 1.0 10ms 0.1 100ms TJ(Max)=150�C TA=25�C 0.1 VDS 1 (Volts) 10 1 0.00001 100 1 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100 10 10s DC 0.0 0.01 TJ(Max)=150�C TA=25�C 1000 Power (W) 10.0 ID (Amps) 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 10000 100.0 Zθ JA Normalized Transient Thermal Resistance Crss 0 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=125�C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 5- 4 100 1000 Single N-channel MOSFET AO3416 ELM13416CA-S ■Test circuit & waveform Gate Charge Test Circuit & Waveform Vgs Qg 10V + VDC + Vds - VDC DUT Qgs Qgd - Vgs Ig Charge R e s istiv e S w itch in g T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs Rg 90 % + VDC Vdd - 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D io d e R eco very T est C ircu it & W a vefo rm s Q rr = - V ds + DUT V ds - Isd V gs Ig Idt V gs Isd L + VD C - IF t rr dI/dt I RM V dd V ds 5- 5 V dd