Dual N-channel MOSFET

Dual N-channel MOSFET
ELM14822AA-N
■General description
■Features
ELM14822AA-N uses advanced trench technology to
provide excellent Rds(on) and low gate charge.
•
•
•
•
Vds=30V
Id=8.5A (Vgs=10V)
Rds(on) < 16mΩ (Vgs=10V)
Rds(on) < 26mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Gate-source voltage
Vds
Vgs
Ta=25°C
Continuous drain current
Id
Ta=70°C
Pulsed drain current
Tc=25°C
Tc=70°C
Power dissipation
30
±20
8.5
Junction and storage temperature range
V
V
6.6
A
1
2
Idm
30
A
Pd
2.00
1.28
W
Tj, Tstg
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
t≤10s
Maximum junction-to-ambient
Maximum junction-to-lead
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
48.0
Max.
62.5
Unit
°C/W
74.0
35.0
110.0
40.0
°C/W
°C/W
Note
1
3
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
Pin name
1
2
SOURCE2
GATE2
3
4
5
SOURCE1
GATE1
DRAIN1
6
7
8
DRAIN1
DRAIN2
DRAIN2
4-1
D2
D1
G2
G1
S1
S2
Dual N-channel MOSFET
ELM14822AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
BVdss Id=250μA, Vgs=0V
Idss
30
1
Vds=24V, Vgs=0V
Ta=55°C
5
Gate-body leakage current
Gate threshold voltage
Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=250μA
1.0
On state drain current
Id(on) Vgs=10V, Vds=5V
30
Static drain-source on-resistance
Rds(on)
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Gfs
Vsd
Is
Input capacitance
Output capacitance
Ciss
Coss
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (10V)
Crss
Rg
Total gate charge (4.5V)
Qg
Qgs
Qgd
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
V
1.8
100
3.0
μA
nA
V
A
Vgs=4.5V, Id=6A
13.4
20.0
21.0
Vds=5V, Id=8.5A
Is=1A, Vgs=0V
23
0.76
Vgs=0V, Vds=15V, f=1MHz
1040
180
Vgs=0V, Vds=0V, f=1MHz
110
0.70
0.85
pF
Ω
19.20
23.00
nC
9.36
2.60
4.20
11.20
nC
nC
nC
5.2
4.4
17.3
7.5
6.5
25.0
ns
ns
ns
5.0
21.0
ns
ns
10.0
nC
Vgs=10V, Id=8.5A
Ta=125°C
Qg
Vgs=10V, Vds=15V, Id=8.5A
td(on)
tr
Vgs=10V, Vds=15V
td(off) RL=1.8Ω, Rgen=3Ω
tf
trr
If=8.5A, dIf/dt=100A/μs
3.3
16.7
Qrr
If=8.5A, dIf/dt=100A/μs
6.7
16.0
25.0
26.0
1.00
3
1250
mΩ
S
V
A
pF
pF
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Dual N-channel MOSFET
ELM14822AA-N
■Typical electrical and thermal characteristics
30
20
4V
10V
25
3.5V
Id (A)
20
Id (A)
Vds=5V
16
4.5V
15
10
12
125°C
8
13.4
Vgs=3V
4
5
0
22
0
0
1
2
3
4
5
1.5
2
Vds (Volts)
Fig 1: On-Region Characteristics
26
0.76
3
2.5
16
3.5
4
Vgs (Volts)
Figure 2: Transfer Characteristics
26
1.6
24
Vgs=4.5V
22
Normalized On-Resistance
Rds(on) (m� )
25°C
20
18
16
Vgs=10V
14
12
Vgs=10V
Id=8.5A
1.4
Vgs=4.5V
1.2
1
10
0
5
10
15
0.8
20
0
Id (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
50
1.0E+01
1.0E+00
Id=8.5A
1.0E-01
30
Is (A)
Rds(on) (m� )
40
125°C
125°C
1.0E-02
25°C
1.0E-03
20
1.0E-04
25°C
1.0E-05
10
2
4
6
8
0.0
10
0.2
0.4
0.6
0.8
Vsd (Volts)
Figure 6: Body-Diode Characteristics
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
1.0
Dual N-channel MOSFET
ELM14822AA-N
10
1250
Capacitance (pF)
8
Vgs (Volts)
1500
Vds=15V
Id=8.5A
6
4
2
Ciss
1000
750
500
Coss
0
0
16
22
26
4
8
12
16
Crss
0
20
0
5
15
20
25
0.76
Vds (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
100�s
1ms
10.0
10�s
0.1s
1s
Tj(max)=150°C
Ta=25°C
DC
1
0.1
10
D=T on/T
Tj,pk=T a+Pdm.Z�ja.R�ja
R�ja=62.5°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
Z�ja Normalized Transient
Thermal Resistance
20
0
0.001
100
Vds (Volts)
10
30
10
10s
0.1
30
Tj(max)=150°C
Ta=25°C
40
10ms
1.0
10
50
Rds(on)
limited
Power (W)
Id (Amps)
13.4
250
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000