Dual P-channel MOSFET ELM18807BA-S ■General description ■Features ELM18807BA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge. Internal ESD protection is included. • • • • • • ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Vds=-12V • ESD Protected Id=-6.5A (Vgs=-4.5V) Rds(on) < 20mΩ (Vgs=-4.5V) Rds(on) < 24mΩ (Vgs=-2.5V) Rds(on) < 30mΩ (Vgs=-1.8V) Rds(on) < 36mΩ (Vgs=-1.5V) Symbol Vds Limit -12 Unit V Vgs ±8 V Id -6.5 -5.0 A Idm Ta=25°C Power dissipation Ta=70°C Junction and storage temperature range -60 1.4 Pd 0.9 -55 to 150 Tj, Tstg Note A 3 W 2 °C ■Thermal characteristics Parameter Symbol Maximum junction-to-ambient Maximum junction-to-ambient Maximum junction-to-lead t≤10s Steady-state Steady-state Typ. Max. Unit Note 73 96 63 90 125 75 °C/W °C/W °C/W 1 1, 4 Rθja Rθjl ■Pin configuration TSSOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 ■Circuit Pin No. Pin name Pin No. Pin name 1 DRAIN1 5 GATE2 2 SOURCE1 6 SOURCE2 3 4 SOURCE1 GATE1 D2 D1 G1 Rg 7 8 G2 Rg S2 S1 4- 1 SOURCE2 DRAIN2 Dual P-channel MOSFET ELM18807BA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage current Gate threshold voltage On state drain current Symbol Condition Min. BVdss Id=-250μA, Vgs=0V -12 Idss Vds=-12V, Vgs=0V Static drain-source on-resistance Tj=125°C Rds(on) Vgs=-2.5V, Id=-6A Vgs=-1.8V, Id=-5.5A Vgs=-1.5V, Id=-5A Forward transconductance Gfs Vds=-5V, Id=-6.5A Diode forward voltage Vsd Is=-1A, Vgs=0V Max. body-diode continuous current Is DYNAMIC PARAMETERS Input capacitance Ciss Output capacitance Coss Vgs=0V, Vds=-6V, f=1MHz Reverse transfer capacitance Crss Gate resistance Rg Vgs=0V, Vds=0V, f=1MHz SWITCHING PARAMETERS Total gate charge Qg Gate-source charge Qgs Vgs=-4.5V, Vds=-6V, Id=-6.5A Gate-drain charge Qgd Turn-on delay time td(on) Vgs=-4.5V, Vds=-6V Turn-on rise time tr Turn-off delay time td(off) RL=0.9Ω, Rgen=3Ω Turn-off fall time tf Body diode reverse recovery time trr If=-6.5A, dl/dt=100A/μs Body diode reverse recovery charge Qrr If=-6.5A, dl/dt=100A/μs NOTE : V Tj=55°C Igss Vds=0V, Vgs=±8V Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-4.5V, Vds=-5V Vgs=-4.5V Id=-6.5A Typ. -0.35 -60 Ta=25°C Max. Unit -0.53 16 23 19 23 28 45 -0.56 -1 -5 ±10 -0.85 20 28 24 30 36 -1.00 -1.4 1740 334 200 1.3 2100 19.0 4.5 5.3 240.0 580.0 7.0 4.2 22 17 23.0 1.7 27 μA μA V A mΩ S V A pF pF pF kΩ nC nC nC ns ns ns ns ns nC 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user's specific board design. 2. The power dissipation Pd is based on Tj(Max.)=150°C, using ≤ 10s junction-to-ambient thermal resistance. 3. Repetitive rating, pulse width limited by junction temperature Tj(Max.)=150°C. Ratings are based on low frequency and duty cycles to keep initial Tj=25°C. 4. The Rθja is the sum of the thermal impedence from junction to lead Rθjl and lead to ambient. 5. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. 6. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of Tj(Max.)=150°C. The SOA curve provides a single pulse rating. 4- 2 Dual P-channel MOSFET AO8807 ELM18807BA-S ■Typical electrical and thermal characteristics TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 -4.5V 50 -2.5V -3V 40 40 -2V -ID(A) -ID (A) VDS=-5V 50 30 30 20 20 VGS=-1.5V 10 125°C 10 0 25°C 0 0 1 2 3 4 5 0 45 Normalized On-Resistance VGS=-1.5V 35 VGS=-2.5V 30 VGS=-1.8V 25 20 15 VGS=-4.5V 10 0 1.5 2 2.5 3 2 4 6 8 10 12 14 ID=-6A, VGS=-2.5V 1.4 ID=-6.5A, VGS=-4.5V 1.2 ID=-5A, VGS=-1.5V ID=-5.5A, VGS=-1.8V 1.0 0.8 16 18 20 0 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage(Note E) 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature(Note E) 1E+01 50 ID=-6.5A 45 1E+00 125°C 40 1E-01 35 30 -IS (A) RDS(ON) (m�) 1 1.6 40 RDS(ON) (m�) 0.5 -VGS(Volts) Figure 2: Transfer Characteristics(Note E) -VDS (Volts) Figure 1: On-Region Characteristics(Note E) 125°C 25 25°C 1E-02 1E-03 20 1E-04 15 25°C 1E-05 10 0 2 4 6 8 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics(Note E) -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com 4- 3 Dual P-channel MOSFET AO8807 ELM18807BA-S TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2800 4.5 VDS=-6V ID=-6.5A 4 2400 Capacitance (pF) -VGS (Volts) 3.5 3 2.5 2 1.5 1 1600 1200 800 0.5 400 0 0 0 4 8 12 16 Ciss 2000 20 Coss Crss 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 4 6 8 10 12 -VDS (Volts) Figure 8: Capacitance Characteristics 100 80 10�s RDS(ON) limited 1ms 1 0.1s 10s 0 DC TJ(Max)=150°C TA=25°C 0 0.01 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Z�JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.Z�JA.R�JA R�JA=125°C/W 40 20 1s 0.1 TJ(Max)=150°C TA=25°C 60 100�s Power (W) 10 ID (Amps) 2 0 0.0001 100 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 0.01 0.00001 Ton Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com 4- 4