Dual N-channel MOSFET ELM14800AA-N ■General description ■Features ELM14800AA-N uses advanced trench technology to provide excellent Rds(on) and low gate charge. • • • • • Vds=30V Id=6.9A (Vgs=10V) Rds(on) < 27mΩ (Vgs=10V) Rds(on) < 32mΩ (Vgs=4.5V) Rds(on) < 50mΩ (Vgs=2.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note 30 V ±12 V Symbol Vds Vgs Ta=25°C Ta=70°C Continuous drain current 6.9 5.8 40 Id Pulsed drain current Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range Tj, Tstg 2.00 A 1 A 2 W 1.44 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Maximum junction-to-ambient Maximum junction-to-lead Symbol t≤10s Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. Max. Unit 48.0 74.0 35.0 62.5 110.0 40.0 °C/W °C/W °C/W Note 1 3 ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. Pin name 1 2 3 SOURCE2 GATE2 SOURCE1 4 5 6 GATE1 DRAIN1 DRAIN1 7 8 DRAIN2 DRAIN2 4-1 D2 D1 G2 G1 S1 S2 Dual N-channel MOSFET ELM14800AA-N ■Electrical characteristics Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=24V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±12V Gate threshold voltage On state drain current Rds(on) Gfs Vds=5V, Id=5A Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Vsd Is Is=1A Input capacitance Ciss Output capacitance Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Coss Crss Rg Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge 0.7 25 Ta=125°C Vgs=0V, Vds=15V, f=1MHz μA 100 nA 1.0 1.4 V A 22.6 27.0 33.0 27.0 42.0 40.0 32.0 50.0 12 16 V A 858 1050 pF 3.60 pF pF Ω Vgs=4.5V, Vds=15V, Id=6.9A 9.60 1.65 If=5A, dIf/dt=100A/μs NOTE : S 1.00 3 Vgs=0V, Vds=0V, f=1MHz Vgs=10V, Vds=15V mΩ 0.71 110 80 1.24 td(off) RL=2.2Ω, Rgen=3Ω tf trr If=5A, dIf/dt=100A/μs Qrr 1.000 5.000 Ta=55°C Vgs=4.5V, Id=6A Vgs=2.5V, Id=5A Forward transconductance V 0.002 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Vgs=10V, Id=6.9A Static drain-source on-resistance 30 12.00 nC nC 3.00 3.2 4.8 nC ns 4.1 6.2 ns 26.3 3.7 15.5 40.0 5.5 20.0 ns ns ns 7.9 12.0 nC 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Dual N-channel MOSFET ELM14800AA-N ■Typical electrical and thermal characteristics 30 20 10V 3V 25 2.5V Id (A) Id (A) 20 Vds=5V 16 4.5V 15 10 Vgs=2V 12 8 125°C 4 5 25°C 0 0 0 1 2 3 4 0 5 0.5 60 2 2.5 3 1.7 Normalized On-Resistance Vgs=2.5V 50 Rds(on) (m� ) 1.5 Vgs (Volts) Figure 2: Transfer Characteristics Vds (Volts) Fig 1: On-Region Characteristics 40 Vgs=4.5V 30 20 Vgs=10V 10 0 5 10 15 1.6 Id=5A 1.5 Vgs=10V Vgs=4.5V 1.4 1.3 Vgs=2.5V 1.2 1.1 1 0.9 0.8 20 0 Id (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 100 150 200 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 70 60 1.0E+00 Id=5A 125°C 40 125°C 1.0E-01 50 Is Amps Rds(on) (m� ) 1 1.0E-02 1.0E-03 1.0E-04 30 10 0 2 4 6 25°C 1.0E-05 25°C 20 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4-3 1.0E-06 0.00 0.25 0.50 0.75 1.00 1.25 Vsd (Volts) Figure 6: Body diode characteristics 1.50 Dual N-channel MOSFET ELM14800AA-N 5 f=1MHz Vgs=0V 1250 Capacitance (pF) 4 Vgs (Volts) 1500 Vds=15V Id=6.9A 3 2 Ciss 1000 1 750 500 Coss 250 0 0 2 4 6 8 10 0 12 0 Qg (nC) Figure 7: Gate-Charge characteristics 100.0 Power W Id (Amps) 0.1s 1s DC 1 0.1 10 30 20 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=62.5°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) Z�ja Normalized Transient Thermal Resistance 25 Tj(max)=150°C Ta=25°C 0 0.001 100 Vds (Volts) 10 20 10 10s 0.1 15 30 10ms 1.0 10 40 100�s 1ms 10.0 5 Vds (Volts) Figure 8: Capacitance Characteristics Tj(max)=150°C Ta=25°C Rds(on) limited Crss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4-4 100 1000