EMC3 / UMC3N / FMC3A Transistors Power management (dual digital transistors) EMC3 / UMC3N / FMC3A zExternal dimensions (Units : mm) zStructure Epitaxial planar type NPN / PNP silicon transistor (Built-in resistor type.) 0.5 0.5 1.0 1.6 0.22 EMC3 (3) (4) (2) (5) 1.2 1.6 (1) 0.5 0.13 zFeatures 1) Both the DTA114E chip and DTC114E chip in a EMT or UMT or SMT package. 2) Ideal for power switch circuits. 3) Mounting cost and area can be cut in half. Each lead has same dimensions ROHM : EMT5 Abbreviated symbol : C3 0.9 2.0 1.3 (3) (2) (1) 0.65 0.65 (4) 0.2 (5) The following characteristics apply to both DTr1 and DTr2, however, the “−“ sign on DTr2 values for the PNP type have been omitted. 0.7 UMC3N 1.25 0to0.1 0.15 2.1 0.1Min. Each lead has same dimensions ROHM : UMT5 EIAJ : SC-88A Abbreviated symbol : C3 zEquivalent circuit (4) R2 R1 DTr1 DTr2 R1 (2) (5) R1=10kΩ R2=10kΩ 1.6 2.8 (1) 0.3to0.6 Type Abbreviated symbol : C3 T2R TR T148 Basic ordering unit (pieces) 8000 3000 3000 UMC3N FMC3A Taping Code EMC3 Each lead has same dimensions ROHM : SMT5 EIAJ : SC-74A zPackaging specifications Package 0to0.1 0.15 (4) R1=10kΩ R2=10kΩ (5) DTr2 R2 (1) DTr1 R2 2.9 R1 R2 (5) 1.1 (4) 0.8 (3) (3) R1 FMC3A FMC3A (1) 0.95 0.95 1.9 (2) (2) (3) 0.3 EMC3 / UMC3N EMC3 / UMC3N / FMC3A Transistors zAbsolute maximum ratings (Ta = 25°C) Symbol Limits Unit Supply voltage Parameter VCC 50 V Input voltage VIN IO 50 IC (Max.) 100 Output current EMC3, UMC3N Power dissipation 40 V −10 mA 150 (TOTAL) Pd FMC3A mW 300 (TOTAL) Junction temperature Tj 150 ˚C Storage temperature Tstg −55∼+150 ˚C ∗1 ∗2 ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. zElectrical characteristics (Ta = 25°C) Parameter Input voltage Output voltage Symbol Min. Typ. Max. VI (off) − − 0.5 VI (on) 3 − − VO (on) − 0.1 0.3 V DC current gain V Conditions VCC=5V, IO=100µA VO=0.3V, IO=10mA IO=10mA, II=0.5mA II − − 0.88 mA IO (off) − − 0.5 µA VCC=50V, VI=0V GI 30 − − − VO=5V, IO=5mA Input current Output current Unit VI=5V Transition frequency fT − 250 − MHz Input resistance R1 7 10 13 kΩ − Resistance ratio R2/R1 0.8 1 1.2 − − VCE=10mA, IE=−5mA, f=100MHz ∗ ∗ Transition frequency of the device zElectrical characteristic curves DTr1 (NPN) 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI (on) (V) 50 20 10 5 2 Ta=−40˚C 25˚C 100˚C 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) 2m 1m 500µ 1k VCC=5V Ta=100˚C 25˚C −40˚C 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 VO=5V 500 DC CURRENT GAIN : GI 100 200 Ta=100˚C 25˚C −40˚C 100 50 20 10 5 2 0.5 1 1.5 2 2.5 3 INPUT VOLTAGE : VI (off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) 1 100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current EMC3 / UMC3N / FMC3A Transistors 1 lO / lI=20 OUTPUT VOLTAGE : VO (on) (V) 500m Ta=100˚C 25˚C −40˚C 200m 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current DTr2 (PNP) OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI (on) (V) −20 −10 −5 −2 Ta=−40˚C 25˚C 100˚C −1 −500m −200m −100m −100µ− 200µ −500µ−1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (A) Fig.5 Input voltage vs. output current (ON characteristics) -1 lO/lI=20 OUTPUT VOLTAGE : VO (on) (V) −500m −200m −100m −10m −5m VO=−0.3V −50 Ta=100˚C 25˚C −40˚C −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ−1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (A) Fig.8 Output voltage vs. output current −2m −1m −500µ VO=−5V 500 Ta=100˚C 25˚C −40˚C −200µ −100µ −50µ −20µ −10µ −5µ −2µ −1µ 0 1k VCC=−5V DC CURRENT GAIN : GI −100 200 Ta=100˚C 25˚C −40˚C 100 50 20 10 5 2 −0.5 −1.0 −1.5 −2.0 −2.5 −3.0 INPUT VOLTAGE : VI (off) (V) Fig.6 Output current vs. input voltage (OFF characteristics) 1 100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m OUTPUT CURRENT : IO (A) Fig.7 DC current gain vs. output current