Photodiode EPD-280-0-0.3-2 31.05.2007 Preliminary rev. 03/07 Wavelength Type Technology Case UV-A – UV-C clear UV-glass SiC TO-39 Description ± 0,1 Chip Location Ø9,14 Ø7,62 ± 0,1 8,13 5,90 5,08 ± 0,1 9, 90 ± 0,45 0, 1 ± 0,03 4,1 Anode ± 1,0 Note: housing with diffuse glass window available on request Applications Environmental technology, analytical techniques, medical applications, industrial sensors, inspecting and controlling of UV radiation as well as for more general purposes 05 0, Chip Location ± 80 0, 13,5 Highly reliable photodiode with high spectral sensitivity in the UV range (220 nm - 380 nm), mounted in hermetically sealed TO-39 package with clear UV-glass window 45,0 0° Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Test сonditions Parameter Symbol Value Unit A 0.056 mm² Temperature coefficient of IPh TC(IPh) 0.1 %/K Operating temperature range Tamb -40 to +70 °C Storage temperature range Tstg -40 to +100 °C ϕ 70 deg. Typ Max Unit Active area Acceptance angle at 50% Sλ Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Parameter Test conditions Symbol IR = 100 µA VR 20 Dark current VR = 1 V ID 10 Peak sensitivity wavelength VR = 0 V λp 280 nm Responsivity at λP VR = 0 V Sλ 0.13 A/W Sensitivity range at 1% VR = 0 V λmin, λmax Spectral bandwidth at 50% VR = 0 V ∆λ0.5 80 Shunt resistance VR = 10 mV RSH 1 Noise equivalent power λ = 280 nm NEP Specific detectivity λ = 280 nm D* 2.2x1013 cm ⋅ Hz ⋅ W −1 VR = 0 V CJ 20 pF VR = 0 V Ee = 100 µW/cm² IPh 3.5 nA Breakdown voltage1) Junction capacitance Photo currentat λ = 254 nm1,2) 1) 2) Min V 100 220 380 1.1x10 fA nm nm TΩ -15 W/ Hz for information only measured with Hg-LP UV-emitter as radiation source Note: All measurements carried out with EPIGAP equipment Labeling Type Lot N° RD (typ.) [TΩ] Quantity EPD-280-0-0.3-2 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 Photodiode EPD-280-0-0.3-2 31.05.2007 Preliminary Typical responsivity to incident radiation, normalized to S @λ = 280 nm rev. 03/07 Short-circuit current vs. irradiance (typical) 2) 1,0 3 0,8 2 Short-circuit current (nA) Responsivity (arb. units) 10 0,6 0,4 10 1 10 0 10 -1 10 0,2 -2 10 0,0 200 250 300 350 400 Wavelength [nm] -2 10 -1 10 0 10 2 Irradiance [mW/cm ] 1 10 2 10 Short-circuit current vs. ambient temperature Short-circuit current (arb. units) 1,04 1,00 0,96 0,92 -40 -20 0 20 40 Ambient temperature [°C] 60 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2