Photodiode EPD-280-0-0.3-1 11.04.2007 Preliminary rev. 02/07 Wavelength Type Technology Case UV-A – UV-C clear UV-glass SiC TO-46 Description +0,1 Ø 5,31 5,1 -0,1 +0,03 +0,025 +0,05 -0,05 Ø 4,75 -0,1 2,54 Ø 4,22 Note: housing with diffuse glass window available on request Ø 5,33 Ø 0,44 -0,03 0,2 -0,025 Cathode Highly reliable photodiode with high spectral sensitivity in the UV range (220 nm - 380 nm), mounted in hermetically sealed TO-46 package with clear UV-glass window Applications Anode Chip Location +1,6 13,4 -1,6 0,23 Environmental technology, analytical techniques, medical applications, industrial sensors, inspecting and controlling of UV radiation as well as for more general purposes +0,075 TO-46 Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Test сonditions Parameter Symbol Value Unit A 0.056 mm² Temperature coefficient of IPh TC(IPh) 0.1 %/K Operating temperature range Tamb -40 to +70 °C Storage temperature range Tstg -40 to +100 °C ϕ 50 deg. Typ Max Unit Active area Acceptance angle at 50% Sλ Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Parameter Test conditions Symbol IR = 100 µA VR 20 Dark current VR = 1 V ID 5 Peak sensitivity wavelength VR = 0 V λp 280 nm Responsivity at λP VR = 0 V Sλ 0.13 A/W Sensitivity range at 1% VR = 0 V λmin, λmax Spectral bandwidth at 50% VR = 0 V ∆λ0.5 80 Shunt resistance VR = 10 mV RSH 2 Noise equivalent power λ = 280 nm NEP Specific detectivity λ = 280 nm D* 3.1x1013 cm ⋅ Hz ⋅ W −1 VR = 0 V CJ 20 pF VR = 0 V Ee = 100 µW/cm² IPh 3.5 nA Breakdown voltage1) Junction capacitance Photo current at λ = 254 nm1,2) 1) 2) Min V 100 220 380 7.6x10 fA nm nm TΩ -16 W/ Hz for information only measured with Hg-LP UV-emitter as radiation source Note: All measurements carried out with EPIGAP equipment Labeling Type Lot N° RD (typ.) [TΩ] Quantity EPD-280-0-0.3-1 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 Photodiode EPD-280-0-0.3-1 11.04.2007 Preliminary Typical responsivity to incident radiation, normalized to S @λ = 280 nm rev. 02/07 Short-circuit current vs. irradiance (typical) 2) 1,0 3 0,8 2 Short-circuit current (nA) Responsivity (arb. units) 10 0,6 0,4 10 1 10 0 10 -1 10 0,2 -2 10 0,0 200 250 300 350 400 Wavelength [nm] -2 10 -1 10 0 10 2 Irradiance [mW/cm ] 1 10 2 10 Short-circuit current vs. ambient temperature Short-circuit current (arb. units) 1,04 1,00 0,96 0,92 -40 -20 0 20 40 Ambient temperature [°C] 60 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2