FAIRCHILD FDA24N50F_12

UniFETTM
FDA24N50F
tm
N-Channel MOSFET
500V, 24A, 0.2Ω
Features
Description
• RDS(on) = 0.166Ω ( Typ.)@ VGS = 10V, ID = 12A
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
• Low Gate Charge ( Typ. 65nC)
• Low Crss ( Typ. 32pF)
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor
correction.
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
D
G
G DS
TO-3PN
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
ID
Drain Current
-Continuous (TC = 25oC)
Units
V
±30
V
24
-Continuous (TC = 100oC)
- Pulsed
Ratings
500
A
14
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
24
A
EAR
Repetitive Avalanche Energy
(Note 1)
27
mJ
dv/dt
Peak Diode Recovery dv/dt
20
V/ns
96
A
(Note 2)
1872
mJ
(Note 3)
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
(Note 1)
- Derate above 25oC
270
W
2.2
W/oC
-55 to +150
o
C
300
o
C
Thermal Characteristics
Symbol
Parameter
Ratings
RθJC
Thermal Resistance, Junction to Case
0.46
RθCS
Thermal Resistance, Case to Sink Typ.
0.24
RθJA
Thermal Resistance, Junction to Ambient
©2012 Fairchild Semiconductor Corporation
FDA24N50F Rev.C0
Units
o
C/W
40
1
www.fairchildsemi.com
FDA24N50F N-Channel MOSFET
February 2012
Device Marking
FDA24N50F
Device
FDA24N50F
Package
TO-3PN
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
ID = 250μA, VGS = 0V, TJ = 25oC
500
-
-
V
ID = 250μA, Referenced to 25oC
-
0.6
-
V/oC
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
VDS = 500V, VGS = 0V
-
-
1
VDS = 400V, TC = 125oC
-
-
10
VGS = ±30V, VDS = 0V
-
-
±100
3.0
-
5.0
V
-
0.166
0.2
Ω
-
30
-
S
μA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250μA
Static Drain to Source On Resistance
VGS = 10V, ID = 12A
gFS
Forward Transconductance
VDS = 20V, ID = 12A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V, ID = 24A
VGS = 10V
(Note 4, 5)
-
3240
4310
pF
-
450
600
pF
-
32
48
pF
-
65
85
nC
-
18
-
nC
-
26
-
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 250V, ID = 24A
RG = 25Ω
(Note 4, 5)
-
49
108
ns
-
105
220
ns
-
165
340
ns
-
87
185
ns
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
24
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
96
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 24A
-
-
1.4
V
trr
Reverse Recovery Time
-
264
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 24A
dIF/dt = 100A/μs
-
1.4
-
μC
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 6.5mH, IAS = 24A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 24A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDA24N50F Rev.C0
2
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FDA24N50F N-Channel MOSFET
Package Marking and Ordering Information
FDA24N50F N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
VGS = 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
Figure 2. Transfer Characteristics
100
ID,Drain Current[A]
ID,Drain Current[A]
60
o
150 C
o
-55 C
10
o
25 C
*Notes:
1. 250μs Pulse Test
1
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
o
0.5
0.1
2. TC = 25 C
1
VDS,Drain-Source Voltage[V]
1
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
IS, Reverse Drain Current [A]
0.25
VGS = 10V
VGS = 20V
0.20
o
150 C
o
10
*Note: TJ = 25 C
0
20
40
60
ID, Drain Current [A]
1
0.2
80
Figure 5. Capacitance Characteristics
6000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz
4500
Ciss
3000
Coss
1500
FDA24N50F Rev.C0
1.4
Figure 6. Gate Charge Characteristics
VDS = 100V
VDS = 250V
VDS = 400V
8
6
4
2
Crss
0
0.1
2. 250μs Pulse Test
0.6
1.0
VSD, Body Diode Forward Voltage [V]
10
VGS, Gate-Source Voltage [V]
7500
25 C
*Notes:
1. VGS = 0V
o
Capacitances [pF]
8
150
100
0.30
0.15
5
6
7
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.35
RDS(ON) [Ω],
Drain-Source On-Resistance
4
0
1
10
VDS, Drain-Source Voltage [V]
30
3
*Note: ID = 24A
0
20
40
Qg, Total Gate Charge [nC]
60
70
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FDA24N50F N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 250μA
0.8
-75
-25
25
75
125
o
TJ, Junction Temperature [ C]
2.5
2.0
1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 12A
0.5
0.0
-75
175
Figure 9. Maximum Safe Operating Area
-25
25
75
125
o
TJ, Junction Temperature [ C]
175
Figure 10. Maximum Drain Current
vs. Case Temperature
24
200
100
60μs
10
ID, Drain Current [A]
ID, Drain Current [A]
100μs
1ms
10ms
DC
Operation in This Area
is Limited by R DS(on)
1
*Notes:
0.1
o
18
12
6
1. TC = 25 C
o
0.01
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
0
25
1000
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve
Thermal Response [ZθJC]
1
0.5
0.1
0.2
PDM
0.1
t1
0.05
0.01
0.02
o
0.01
1. ZθJC(t) = 0.46 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.001
-5
10
FDA24N50F Rev.C0
t2
*Notes:
-4
10
-3
-2
-1
10
10
10
Rectangular Pulse Duration [sec]
4
0
10
1
10
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FDA24N50F N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDA24N50F Rev.C0
5
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FDA24N50F N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
FDA24N50F Rev.C0
6
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FDA24N50F N-Channel MOSFET
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
FDA24N50F Rev.C0
7
www.fairchildsemi.com
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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2.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
FDA24N50F Rev.C0
8
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FDA24N50F N-Channel MOSFET
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