UniFETTM FDA38N30 N-Channel MOSFET 300V, 38A, 0.085Ω Features Description • RDS(on) = 0.07Ω ( Typ.) @ VGS = 10V, ID = 19A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 60 nC) • Low Crss ( typical 60 pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability • ESD Improved capability • RoHS Compliant D G G DS TO-3PN FDA Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted FDA38N30 Unit VDSS Symbol Drain to Source Voltage Parameter 300 V VGSS Gate to Source Voltage ±30 V ID Drain Current IDM Drain Current EAS IAR -Continuous (TC = 25oC) 38 -Continuous (TC = 100oC) 22 - Pulsed A (Note 1) 150 A Single Pulsed Avalanche Energy (Note 2) 1200 mJ Avalanche Current (Note 1) 38 A EAR Repetitive Avalanche Energy (Note 1) 31 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns 312 PD Power Dissipation W 2.5 W/oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 °C (TC = 25oC) o - Derate above 25 C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθCS Thermal Resistance, Case-to-Sink RθJA Thermal Resistance, Junction-to-Ambient ©2011 Fairchild Semiconductor Corporation FDA38N30 Rev. C0 Min. Max. Unit - 0.4 °C/W 0.24 - °C/W - 40 °C/W www.fairchildsemi.com FDA38N30 N-Channel MOSFET January 2012 Device Marking Device Package Reel Size Tape Width Quantity FDA38N30 FDA38N30 TO-3PN - - 30 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TC = 25oC 300 - - V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C - 0.3 - V/°C - 1 Zero Gate Voltage Drain Current VDS = 300V, VGS = 0V - IDSS VDS = 240V, TC = 125oC - - 10 IGSS Gate-Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 nA 3.0 - 5.0 V 0.07 0.085 Ω - 6.3 - S μA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 19A gFS Forward Transconductance VDS = 20V, ID = 19A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 240V, ID = 38A VGS = 10V (Note 4, 5) - 2600 - pF - 500 - pF - 60 - pF - 60 - nC - 17 - nC - 28 - nC - 53 69 ns - 110 143 ns - 118 153 ns - 54 70 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf VDD = 150V, ID = 38A RG = 25Ω, VGS = 10V (Note 4, 5) Turn-Off Fall Time Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 38 A ISM Maximum Pulsed Drain-Source Diode Forward Current - - 150 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 38A - - 1.4 V trr Reverse Recovery Time - 315 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 38A dIF/dt = 100A/μs - 4.0 - μC (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1.7mH, IAS = 38A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 38A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDA38N30 Rev. C0 2 www.fairchildsemi.com FDA38N30 N-Channel MOSFET Package Marking and Ordering Information FDA38N30 N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] 2 10 ID, Drain Current [A] 2 10 1 10 o 150 C 1 10 o 25 C o -55 C * Notes: 1. VDS = 20V * Notes: 1. 250μs Pulse Test 0 10 o 2. 250μs Pulse Test 2. TC = 25 C 0 -1 0 10 10 1 10 10 2 4 6 8 10 12 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.13 2 10 IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 0.12 0.11 0.10 0.09 VGS = 10V 0.08 0.07 VGS = 20V 0.06 * Note : TJ = 25 0.05 0 25 50 75 100 1 o 10 150 C o 25 C * Notes: 1. VGS = 0V 2. 250μs Pulse Test 0 10 0.2 125 0.4 ID, Drain Current [A] 0.8 Crss = Cgd VGS, Gate-Source Voltage [V] Capacitances [pF] 2000 * Note ; 1. VGS = 0 V Crss 2. f = 1 MHz 1 10 VDS = 240V 6 4 2 ? Note : ID = 38A 0 10 20 30 40 50 60 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] FDA38N30 Rev. C0 1.8 VDS = 150V 8 0 0 1.6 VDS = 60V 10 Ciss 10 1.4 12 Ciss = Cgs + Cgd (Cds = shorted) Coss 0 -1 10 1.2 Figure 6. Gate Charge Characteristics Coss = Cds + Cgd 4000 1.0 VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 6000 0.6 3 www.fairchildsemi.com FDA38N30 N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250uA 0.8 -100 -50 0 50 100 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 0.0 -100 150 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10V 2. ID = 19A 0.5 -50 0 50 100 o TJ, Junction Temperature [ C] 150 Figure 10. Maximum Drain Current vs. Case Temperature 1000 40 100μs ID, Drain Current [A] ID, Drain Current [A] 10μs 100 1ms 10 DC 10ms Operation in This Area is Limited by R DS(on) 1 *Notes: o 0.1 30 20 10 1. TC = 25 C o 0.01 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 500 50 75 100 125 o TC, Case Temperature [ C] 150 Thermal Response [ZθJC] Figure 11. Transient Thermal Response Curve 0.5 0.1 0.2 0.1 t1 *Notes: 0.02 0.01 -5 t2 o 0.01 1. ZθJC(t) = 0.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 10 FDA38N30 Rev. C0 PDM 0.05 -4 10 -3 -2 -1 0 10 10 10 10 Rectangular Pulse Duration [sec] 4 1 10 2 10 www.fairchildsemi.com FDA38N30 N-Channel MOSFET Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT 200nF Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG 10V RL VDS 90% VDD VGS VGS DUT 10% td(on) tr t on td(off) tf t off Unclamped Inductive Switching Test Circuit & Waveforms FDA38N30 Rev. C0 5 www.fairchildsemi.com FDA38N30 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop FDA38N30 Rev. C0 6 www.fairchildsemi.com FDA38N30 N-Channel MOSFET Mechanical Dimensions TO-3PN Dimensions in Millimeters FDA38N30 Rev. C0 7 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FDA38N30 Rev. C0 8 www.fairchildsemi.com FDA38N30 N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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