FAIRCHILD FDB8443

FDB8443
tm
®
N-Channel PowerTrench MOSFET
40V, 80A, 3.0mΩ
Features
Applications
„ Typ rDS(on) = 2.3mΩ at VGS = 10V, ID = 80A
„ Automotive Engine Control
„ Typ Qg(10) = 142nC at VGS = 10V
„ Powertrain Management
„ Low Miller Charge
„ Solenoid and Motor Drivers
„ Low Qrr Body Diode
„ Electronic Steering
„ UIS Capability (Single Pulse and Repetitive Pulse)
„ Integrated Starter / Alternator
„ Qualified to AEC Q101
„ Distributed Power Architecture and VRMs
„ RoHS Compliant
„ Primary Switch for 12V Systems
©2007 Fairchild Semiconductor Corporation
FDB8443 Rev. A
1
www.fairchildsemi.com
FDB8443 N-Channel PowerTrench® MOSFET
August 2007
Symbol
VDSS
Drain to Source Voltage
VGS
ID
Parameter
Ratings
40
Units
V
Gate to Source Voltage
±20
V
Drain Current Continuous (TC < 146oC, VGS = 10V)
80
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W)
25
Pulsed
EAS
PD
A
See Figure 4
Single Pulse Avalanche Energy
(Note 1)
531
mJ
Power Dissipation
188
W
Derate above 25oC
1.25
W/oC
-55 to +175
oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case
RθJA
Thermal Resistance Junction to Ambient
RθJA
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
(Note 2)
0.8
o
C/W
62
o
C/W
43
o
C/W
Package Marking and Ordering Information
Device Marking
FDB8443
Device
FDB8443
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
V
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
40
-
-
-
-
1
-
-
250
VGS = ±20V
-
-
±100
nA
VGS = VDS, ID = 250μA
2
2.8
4
V
ID = 80A, VGS= 10V
-
2.3
3.0
ID = 80A, VGS= 10V,
TJ = 175oC
-
4.2
5.5
VDS = 25V, VGS = 0V,
f = 1MHz
-
9310
-
pF
-
800
-
pF
pF
VDS = 32V,
VGS = 0V
TC = 150oC
μA
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
-
510
-
RG
Gate Resistance
VGS = 0.5V, f = 1MHz
-
0.9
-
Ω
Qg(TOT)
Total Gate Charge at 10V
VGS = 0 to 10V
-
142
185
nC
Qg(TH)
Threshold Gate Charge
VGS = 0 to 2V
Qgs
Gate to Source Gate Charge
Qgs2
Gate Charge Threshold to Plateau
Qgd
Gate to Drain “Miller“ Charge
FDB8443 Rev. A
2
VDD = 20V
ID = 35A
Ig = 1mA
-
17.5
23
nC
-
36
-
nC
-
18.8
-
nC
-
32
-
nC
www.fairchildsemi.com
FDB8443 N-Channel PowerTrench® MOSFET
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics (VGS = 10V)
ton
Turn-On Time
-
-
58
ns
td(on)
Turn-On Delay Time
-
18.4
-
ns
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
toff
VDD = 20V, ID = 35A
VGS = 10V, RGS = 2Ω
-
17.9
-
ns
-
55
-
ns
Fall Time
-
13.5
-
ns
Turn-Off Time
-
-
109
ns
ISD = 35A
-
0.8
1.25
ISD = 15A
-
0.8
1.0
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD = 35A, dISD/dt = 100A/μs
V
-
42
55
ns
-
48
62
nC
Notes:
1: Starting TJ = 25oC, L = 0.26mH, IAS = 64A.
2: Pulse width = 100s.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDB8443 Rev. A
3
www.fairchildsemi.com
FDB8443 N-Channel PowerTrench® MOSFET
Electrical Characteristics TC = 25oC unless otherwise noted
200
1.0
160
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULIPLIER
1.2
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs Case
Temperature
NORMALIZED THERMAL
IMPEDANCE, ZθJC
2
1
VGS = 10V
120
80
40
0
25
175
CURRENT LIMITED
BY PACKGAE
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
175
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
1E-3
-5
10
-4
-3
10
-2
-1
0
10
10
10
t, RECTANGULAR PULSE DURATION(s)
1
10
10
Figure 3. Normalized Maximum Transient Thermal Impedance
5000
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
IDM, PEAK CURRENT (A)
1000
CURRENT AS FOLLOWS:
175 - TC
I = I2
150
100
SINGLE PULSE
10
-5
10
-4
10
-3
-2
-1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
0
10
1
10
Figure 4. Peak Current Capability
FDB8443 Rev. A
4
www.fairchildsemi.com
FDB8443 N-Channel PowerTrench® MOSFET
Typical Characteristics
500
1000
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
10us
100
100us
100
10
LIMITED
BY PACKAGE
1ms
1
SINGLE PULSE
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
0.1
1
10ms
TJ = MAX RATED
o
TC = 25 C
STARTING TJ = 25oC
10
STARTING TJ = 150oC
DC
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
1
0.01
100
0.1
1
10
100
1000 5000
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
200
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGS = 10V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
160
Figure 6. Unclamped Inductive Switching
Capability
VDD = 5V
120
TJ = 175oC
80
TJ = 25oC
TJ = -55oC
40
0
2.0
2.5
3.0
3.5
4.0
4.5
160
VGS = 5V
VGS = 4.5V
120
80
40
0
5.0
VGS = 4V
0
VGS, GATE TO SOURCE VOLTAGE (V)
rDS(on), DRAIN TO SOURCE
ON-RESISTANCE (mΩ)
ID = 80A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
60
TJ = 25oC
o
40
TJ = 175 C
20
0
3
4
5
6
7
8
9
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
FDB8443 Rev. A
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
5
Figure 8. Saturation Characteristics
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
Figure 7. Transfer Characteristics
80
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
1.8
1.6
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
0.8
0.6
-80
ID = 80A
VGS = 10V
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
200
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
5
www.fairchildsemi.com
FDB8443 N-Channel PowerTrench® MOSFET
Typical Characteristics
1.2
1.15
1.10
1.0
1.05
0.8
1.00
0.6
0.4
-80
0.95
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
0.90
-80
200
20000
Ciss
10000
Coss
1000
Crss
f = 1MHz
VGS = 0V
100
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
50
Figure 13. Capacitance vs Drain to Source
Voltage
FDB8443 Rev. A
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
VGS, GATE TO SOURCE VOLTAGE(V)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
CAPACITANCE (pF)
ID = 1mA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
NORMALIZED GATE
THRESHOLD VOLTAGE
VGS = VDS
ID = 250μA
10
ID = 35A
VDD = 15V
8
VDD = 20V
6
VDD = 25V
4
2
0
0
20
40
60
80 100 120
Qg, GATE CHARGE(nC)
140
160
Figure 14. Gate Charge vs Gate to Source Voltage
6
www.fairchildsemi.com
FDB8443 N-Channel PowerTrench® MOSFET
Typical Characteristics
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and
is not intended to be an exhaustive list of all such trademarks.
ACEx®
Build it Now™
CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
Power247®
POWEREDGE®
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
Green FPS™
Green FPS™ e-Series™
GTO™
i-Lo™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FPS™
FRFET®
Global Power ResourceSM
®
PDP-SPM™
Power220®
SuperSOT™-8
SyncFET™
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC®
UniFET™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1.
Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in a significant injury to the user.
2.
A critical component in any component of a life support,
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I31
FDB8443 Rev. A
7
www.fairchildsemi.com
FDB8443 N-Channel PowerTrench® MOSFET
TRADEMARKS