FDB8443 tm ® N-Channel PowerTrench MOSFET 40V, 80A, 3.0mΩ Features Applications Typ rDS(on) = 2.3mΩ at VGS = 10V, ID = 80A Automotive Engine Control Typ Qg(10) = 142nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Starter / Alternator Qualified to AEC Q101 Distributed Power Architecture and VRMs RoHS Compliant Primary Switch for 12V Systems ©2007 Fairchild Semiconductor Corporation FDB8443 Rev. A 1 www.fairchildsemi.com FDB8443 N-Channel PowerTrench® MOSFET August 2007 Symbol VDSS Drain to Source Voltage VGS ID Parameter Ratings 40 Units V Gate to Source Voltage ±20 V Drain Current Continuous (TC < 146oC, VGS = 10V) 80 Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) 25 Pulsed EAS PD A See Figure 4 Single Pulse Avalanche Energy (Note 1) 531 mJ Power Dissipation 188 W Derate above 25oC 1.25 W/oC -55 to +175 oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC Thermal Resistance Junction to Case RθJA Thermal Resistance Junction to Ambient RθJA Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area (Note 2) 0.8 o C/W 62 o C/W 43 o C/W Package Marking and Ordering Information Device Marking FDB8443 Device FDB8443 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units V Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V 40 - - - - 1 - - 250 VGS = ±20V - - ±100 nA VGS = VDS, ID = 250μA 2 2.8 4 V ID = 80A, VGS= 10V - 2.3 3.0 ID = 80A, VGS= 10V, TJ = 175oC - 4.2 5.5 VDS = 25V, VGS = 0V, f = 1MHz - 9310 - pF - 800 - pF pF VDS = 32V, VGS = 0V TC = 150oC μA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 510 - RG Gate Resistance VGS = 0.5V, f = 1MHz - 0.9 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V - 142 185 nC Qg(TH) Threshold Gate Charge VGS = 0 to 2V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller“ Charge FDB8443 Rev. A 2 VDD = 20V ID = 35A Ig = 1mA - 17.5 23 nC - 36 - nC - 18.8 - nC - 32 - nC www.fairchildsemi.com FDB8443 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics (VGS = 10V) ton Turn-On Time - - 58 ns td(on) Turn-On Delay Time - 18.4 - ns tr Rise Time td(off) Turn-Off Delay Time tf toff VDD = 20V, ID = 35A VGS = 10V, RGS = 2Ω - 17.9 - ns - 55 - ns Fall Time - 13.5 - ns Turn-Off Time - - 109 ns ISD = 35A - 0.8 1.25 ISD = 15A - 0.8 1.0 Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 35A, dISD/dt = 100A/μs V - 42 55 ns - 48 62 nC Notes: 1: Starting TJ = 25oC, L = 0.26mH, IAS = 64A. 2: Pulse width = 100s. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDB8443 Rev. A 3 www.fairchildsemi.com FDB8443 N-Channel PowerTrench® MOSFET Electrical Characteristics TC = 25oC unless otherwise noted 200 1.0 160 ID, DRAIN CURRENT (A) POWER DISSIPATION MULIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) Figure 1. Normalized Power Dissipation vs Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 VGS = 10V 120 80 40 0 25 175 CURRENT LIMITED BY PACKGAE 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 2. Maximum Continuous Drain Current vs Case Temperature DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 1E-3 -5 10 -4 -3 10 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 5000 VGS = 10V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK IDM, PEAK CURRENT (A) 1000 CURRENT AS FOLLOWS: 175 - TC I = I2 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDB8443 Rev. A 4 www.fairchildsemi.com FDB8443 N-Channel PowerTrench® MOSFET Typical Characteristics 500 1000 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 10us 100 100us 100 10 LIMITED BY PACKAGE 1ms 1 SINGLE PULSE OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.1 1 10ms TJ = MAX RATED o TC = 25 C STARTING TJ = 25oC 10 STARTING TJ = 150oC DC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 1 0.01 100 0.1 1 10 100 1000 5000 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area 200 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX VGS = 10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 160 Figure 6. Unclamped Inductive Switching Capability VDD = 5V 120 TJ = 175oC 80 TJ = 25oC TJ = -55oC 40 0 2.0 2.5 3.0 3.5 4.0 4.5 160 VGS = 5V VGS = 4.5V 120 80 40 0 5.0 VGS = 4V 0 VGS, GATE TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) ID = 80A PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 60 TJ = 25oC o 40 TJ = 175 C 20 0 3 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDB8443 Rev. A 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 Figure 8. Saturation Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 7. Transfer Characteristics 80 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.8 1.6 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.4 1.2 1.0 0.8 0.6 -80 ID = 80A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 www.fairchildsemi.com FDB8443 N-Channel PowerTrench® MOSFET Typical Characteristics 1.2 1.15 1.10 1.0 1.05 0.8 1.00 0.6 0.4 -80 0.95 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.90 -80 200 20000 Ciss 10000 Coss 1000 Crss f = 1MHz VGS = 0V 100 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 Figure 13. Capacitance vs Drain to Source Voltage FDB8443 Rev. A -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature CAPACITANCE (pF) ID = 1mA NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE VGS = VDS ID = 250μA 10 ID = 35A VDD = 15V 8 VDD = 20V 6 VDD = 25V 4 2 0 0 20 40 60 80 100 120 Qg, GATE CHARGE(nC) 140 160 Figure 14. Gate Charge vs Gate to Source Voltage 6 www.fairchildsemi.com FDB8443 N-Channel PowerTrench® MOSFET Typical Characteristics The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 FDB8443 Rev. A 7 www.fairchildsemi.com FDB8443 N-Channel PowerTrench® MOSFET TRADEMARKS