FDD5810 N-Channel Logic Level Trench® MOSFET 60V, 36A, 27mΩ Applications RDS(ON) = 22mΩ (Typ.), VGS = 5V, ID = 29A Motor / Body Load Control Qg(5) = 13nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low Qrr Body Diode Injection System UIS Capability (Single Pulse / Repetitive Pulse) DC-DC converters and Off-line UPS Qualified to AEC Q101 Distributed Power Architecture and VRMs RoHS Compliant Primary Switch for 12V and 24V systems A REE I DF M ENTATIO LE N MP LE Features D D G S G D-PAK TO-252 (TO-252) ©2006 Fairchild Semiconductor Corporation FDD5810 Rev. A (W) S 1 www.fairchildsemi.com FDD5810 N-Channel Logic Level Trench® MOSFET October 2007 Symbol VDSS Drain to Source Voltage Ratings 60 Units V VGS Gate to Source Voltage ±20 V Drain Current Continuous (VGS = 10V) 37 A Drain Current Continuous (VGS = 5V) 33 A 7.4 A ID Parameter Continuous (TA = 25oC, VGS = 10V, with RθJA = 52oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Figure 4 A 45 mJ Power Dissipation 72 W Derate above 25oC 0.48 W/oC Operating and Storage Temperature o -55 to 175 C Thermal Characteristics RθJC RθJA Maximum Thermal resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 2.1 oC/W 52 oC/W Package Marking and Ordering Information Device Marking FDD5810 Device FDD5810 Package TO-252AA Reel Size 330mm Tape Width 16mm Quantity 2500 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units 60 - - - V - 1 - - 250 VGS = ±20V - - ±100 nA VGS = VDS, ID = 250μA 1 1.6 2 V ID = 32A, VGS = 10V - 18 22 ID = 29A, VGS = 5V - 22 27 ID = 32A, VGS = 10V, TJ = 175oC - 43 53 - 1420 1890 pF - 150 200 pF - 65 100 pF Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V VDS = 48V VGS = 0V TC = 150oC μA On Characteristics VGS(TH) RDS(ON) Gate to Source Threshold Voltage Drain to Source On Resistance mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance f = 1MHz - 3.5 - Ω Qg Total Gate Charge at 10V VGS = 0V to 10V - 24 34 nC Qg Total Gate Charge at 5V VGS = 0V to 5V - 13 18 nC Qg(th) Threshold Gate Charge VGS = 0V to 1V - 1.3 - nC Qgs Gate to Source Gate Charge - 4.0 - nC Qgs2 Gate Charge Threshold to Plateau - 2.7 - nC Qgd Gate to Drain “Miller” Charge - 5.0 - nC FDD5810 Rev. A (W) VDS = 25V, VGS = 0V, f = 1MHz 2 VDD = 30V ID = 35A www.fairchildsemi.com FDD5810 N-Channel Logic Level Trench® MOSFET Absolute Maximum Ratings TC = 25°C unless otherwise noted ton Turn-On Time - - 130 ns td(on) Turn-On Delay Time - 12 - ns tr Rise Time - 75 - ns td(off) Turn-Off Delay Time - 26 - ns tf Fall Time - 34 - ns toff Turn-Off Time - - 90 ns ISD = 32A - - 1.25 V ISD = 16A - - 1.0 V VDD = 30V, ID = 35A VGS = 5V, RGS = 11Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time IF = 35A, di/dt = 100A/μs - - 39 ns Qrr Reverse Recovery Charge IF = 35A, di/dt = 100A/μs - - 35 nC Notes: 1: Starting TJ = 25°C, L = 110μH, IAS = 28A, VDD = 54V, VGS = 10V. FDD5810 Rev. A (W) 3 www.fairchildsemi.com FDD5810 N-Channel Logic Level Trench® MOSFET Switching Characteristics 40 1.0 ID , DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 30 VGS = 10V 20 VGS = 5V 10 0.2 0 25 0 0 25 50 75 100 150 125 TC , CASE TEMPERATURE 175 50 (oC) 75 TC, CASE Figure 1. Normalized Power Dissipation vs Case Temperature 100 125 150 175 TEMPERATURE(oC) Figure 2. Maximum Continuous Drain Current vs Case Temperature 2 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 ZθJC, NORMALIZED THERMAL IMPEDANCE 1 PDM 0.1 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x RθJC + TC 0.01 10-5 10-4 10-3 10-2 10-1 100 101 t, RECTANGULAR PULSE DURATION (s) Figure 3. Normalized Maximum Transient Thermal Impedance IDM, PEAK CURRENT (A) 600 TC = 25oC TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 - TC I = I25 150 100 VGS = 5V 30 10-5 10-4 10-3 10-2 10-1 100 101 t, PULSE WIDTH (s) Figure 4. Peak Current Capability FDD5810 Rev. A (W) 4 www.fairchildsemi.com FDD5810 N-Channel Logic Level Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 500 10us 10 100us OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 IAS, AVALANCHE CURRENT (A) ID , DRAIN CURRENT (A) 200 100 SINGLE PULSE 1ms TJ = MAX RATED o TC = 25 C 10ms DC 0.1 1 10 100 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 STARTING TJ = 25oC 10 STARTING TJ = 150oC 1 200 0.001 0.01 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area 1 10 100 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching Capability 60 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX VDD = 6V VGS = 4.5V VGS = 10V ID, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 60 0.1 tAV, TIME IN AVALANCHE (ms) 40 TJ = 25oC 20 VGS = 5V VGS = 4V 40 VGS = 3.5V 20 VGS = 3V TJ = 175oC PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX TJ = -55oC 0 2.0 1.0 4.0 3.0 5.0 0 Figure 7. Transfer Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 26 ID = 35A 22 ID = 1A 14 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Drain to Source On Resistance vs Gate Voltage and Drain Current FDD5810 Rev. A (W) 1.5 2.0 2.5 2.8 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 2 1.0 Figure 8. Saturation Characteristics 30 18 0.5 VDS , DRAIN TO SOURCE VOLTAGE (V) VGS , GATE TO SOURCE VOLTAGE (V) RDS(ON), DRAIN TO SOURCE ON RESISTANCE (mΩ) TC = 25oC 0 0 2.4 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 2.0 1.6 1.2 0.8 0.4 -80 ID = 32A VGS = 10V -40 0 40 80 120 TJ, JUNCTION TEMPERATURE(oC) 160 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 www.fairchildsemi.com FDD5810 N-Channel Logic Level Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 1.4 1.2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE VGS = VDS, ID = 250μA 1.1 0.8 0.5 ID = 250μA 1.1 1.0 0.9 0.2 -80 -40 0 40 80 120 160 -80 200 -40 TJ, JUNCTION TEMPERATURE (oC) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 40 80 120 160 200 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10 VGS , GATE TO SOURCE VOLTAGE (V) 10000 Ciss C, CAPACITANCE (pF) 0 TJ , JUNCTION TEMPERATURE (oC) 1000 Coss Crss 100 VDD = 30V 8 6 4 WAVEFORMS IN DESCENDING ORDER: ID = 35A ID = 1A 2 VGS = 0V, f = 1MHz 10 0 1 0.1 10 60 0 VDS , DRAIN TO SOURCE VOLTAGE (V) 10 15 20 25 Qg, GATE CHARGE (nC) Figure 13. Capacitance vs Drain to Source Voltage FDD5810 Rev. A (W) 5 Figure 14. Gate Charge Waveforms for Constant Gate Current 6 www.fairchildsemi.com FDD5810 N-Channel Logic Level Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Definition Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com