FAIRCHILD FDD8451

FDD8451
N-Channel PowerTrench® MOSFET
tm
40V, 28A, 24mΩ
Features
General Description
„ Max rDS(on) = 24mΩ at VGS = 10V, ID = 9A
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, fast
switching speed and extremely low rDS(on).
„ Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7A
„ Low gate charge
„ Fast Switching
Application
„ High performance trench technology for extremely low
rDS(on)
LE
A
„ Backlight inverter
M ENTATIO
LE
N
MP
„ RoHS compliant
„ DC/DC converter
REE I
DF
D
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
Ratings
40
Units
V
VGS
Gate to Source Voltage
±20
V
Drain Current -Continuous @TC=25°C
28
ID
-Continuous @TA=25°C
9
-Pulsed
EAS
Single Pulse Avalanche Energy
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature
(Note 1)
(Note 2)
A
78
20
mJ
37
W
-55 to 150
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
4.1
°C/W
RθJA
Thermal Resistance, Junction to Ambient
40
°C/W
RθJA
Thermal Resistance, Junction to Ambient
96
°C/W
Package Marking and Ordering Information
Device Marking
FDD8451
Device
FDD8451
©2008 Fairchild Semiconductor Corporation
FDD8451 Rev. B1
Package
D-PAK(TO-252)
1
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
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FDD8451 N-Channel PowerTrench® MOSFET
March 2008
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to
25°C
40
V
IDSS
Zero Gate Voltage Drain Current
VDS = 32V, VGS = 0V
1
µA
IGSS
Gate to Source Leakage Current
VGS = ±20V, VDS = 0V
±100
nA
3
V
33.5
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to
25°C
rDS(on)
gFS
Drain to Source On Resistance
Forward Transcondductance
1
2.1
-5.7
mV/°C
VGS = 10V, ID = 9A
19
24
VGS = 4.5V, ID = 7A
23
30
VGS = 10V, ID = 9A
TJ = 150°C
32
41
VDS = 5V, ID = 9A
29
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 20V, VGS = 0V,
f = 1MHz
f = 1MHz
780
990
pF
112
150
pF
72
110
pF
Ω
1.1
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
7
14
ns
3
10
td(off)
Turn-Off Delay Time
ns
19
34
tf
ns
Fall Time
2
10
ns
Qg
Total Gate Charge at 10V
16
20
nC
Qg
Total Gate Charge at 5V
8.6
11
nC
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller”Charge
VDD = 20V, ID = 9A
VGS = 10V, RGEN = 6Ω
VDS= 20V, ID = 9A
VGS = 10V
2.5
nC
3.7
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage VGS = 0V, IS = 9A
0.87
1.2
V
trr
Reverse Recovery Time
IF = 9A, di/dt = 100A/µs
25
38
ns
Qrr
Reverse Recovery Charge
IF = 9A, di/dt = 100A/µs
19
29
nC
Notes:
1: Pulse time < 300µs, Duty cycle = 2%.
2: Starting TJ = 25oC, L = 0.1mH, IAS = 20A ,VDD = 36V, VGS = 10V.
FDD8451 Rev. B1
2
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FDD8451 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
4.0
ID, DRAIN CURRENT (A)
VGS = 10V
50
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
60
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 4V
40
VGS = 4.5V
30
VGS = 3.5V
20
10
VGS = 3V
0
0
1
2
3
VDS, DRAIN TO SOURCE VOLTAGE (V)
4
VGS = 3V
2.5
VGS = 3.5V
2.0
VGS = 4V
1.5
VGS = 5V
1.0
0.5
VGS = 10V
0
10
20
30
40
ID, DRAIN CURRENT(A)
50
60
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
2.0
160
ID = 9A
VGS = 10V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
ID = 10A
200
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
120
80
TJ = 175oC
40
0
Figure 3. Normalized On Resistance vs Junction
Temperature
TJ = 25oC
2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance vs Gate to Source
Voltage
100
IS, REVERSE DRAIN CURRENT (A)
40
ID, DRAIN CURRENT (A)
3.0
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
Figure 1. On Region Characteristics
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
3.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
30
20
TJ = 175oC
10
TJ = 25oC
TJ = -55oC
0
1.5
2.0
2.5
3.0
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
4.0
Figure 5. Transfer Characteristics
FDD8451 Rev. B1
VGS = 0V
10
1
0.1
0.01
1E-3
0.0
TJ = 175oC
TJ = 25oC
TJ = -55oC
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
3
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FDD8451 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
3000
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
10
VDD = 15V
VDD = 20V
6
VDD = 25V
4
Coss
100
Crss
2
0
f = 1MHz
VGS = 0V
0
4
8
12
Qg, GATE CHARGE(nC)
10
0.1
16
Figure 7. Gate Charge Characteristics
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
30
TJ = 25oC
10
TJ = 125oC
TJ = 150oC
1
1E-3
0.01
0.1
1
10
25
20
15
VGS =4.5V
10
5
0
100
VGS = 10V
o
RθJC = 4.1 C/W
40
60
tAV, TIME IN AVALANCHE(ms)
P(PK), PEAK TRANSIENT POWER (W)
100us
1ms
10
10ms
SINGLE PULSE
TJ = MAX RATED
TC = 25OC
0.1
1
100ms
DC
10
80
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
FDD8451 Rev. B1
120
160 175
140
TEMPERATURE(oC)
TC = 25oC
VGS = 10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
1000
LIMITED BY
PACKAGE
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
100
Figure 10. Maximum Continuous Drain Current vs
Case Temperature
10000
100
ID, DRAIN CURRENT (A)
80
TC, CASE
Figure 9. Unclamped Inductive Switching
Capability
1
40
Figure 8. Capacitance vs Drain to Source Voltage
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT(A)
Ciss
1000
I = I25
175 – T C
---------------------150
100
SINGLE PULSE
10
-5
10
-4
10
-3
-2
-1
10
10
10
t, PULSE WIDTH (s)
0
10
1
10
Figure 12. Single Pulse Maximum Power
Dissipation
4
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FDD8451 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
0.005
-5
10
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
-4
10
-3
-2
10
10
-1
10
0
10
1
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
FDD8451 Rev. B1
5
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FDD8451 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
Obsolete
Not In Production
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
FDD8451 Rev. B1
6
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FDD8451 N-Channel PowerTrench® MOSFET
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