FDD8451 N-Channel PowerTrench® MOSFET tm 40V, 28A, 24mΩ Features General Description Max rDS(on) = 24mΩ at VGS = 10V, ID = 9A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, fast switching speed and extremely low rDS(on). Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7A Low gate charge Fast Switching Application High performance trench technology for extremely low rDS(on) LE A Backlight inverter M ENTATIO LE N MP RoHS compliant DC/DC converter REE I DF D G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter Ratings 40 Units V VGS Gate to Source Voltage ±20 V Drain Current -Continuous @TC=25°C 28 ID -Continuous @TA=25°C 9 -Pulsed EAS Single Pulse Avalanche Energy PD Power Dissipation TJ, TSTG Operating and Storage Temperature (Note 1) (Note 2) A 78 20 mJ 37 W -55 to 150 °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case 4.1 °C/W RθJA Thermal Resistance, Junction to Ambient 40 °C/W RθJA Thermal Resistance, Junction to Ambient 96 °C/W Package Marking and Ordering Information Device Marking FDD8451 Device FDD8451 ©2008 Fairchild Semiconductor Corporation FDD8451 Rev. B1 Package D-PAK(TO-252) 1 Reel Size 13’’ Tape Width 12mm Quantity 2500 units www.fairchildsemi.com FDD8451 N-Channel PowerTrench® MOSFET March 2008 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C 40 V IDSS Zero Gate Voltage Drain Current VDS = 32V, VGS = 0V 1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA 3 V 33.5 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C rDS(on) gFS Drain to Source On Resistance Forward Transcondductance 1 2.1 -5.7 mV/°C VGS = 10V, ID = 9A 19 24 VGS = 4.5V, ID = 7A 23 30 VGS = 10V, ID = 9A TJ = 150°C 32 41 VDS = 5V, ID = 9A 29 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 20V, VGS = 0V, f = 1MHz f = 1MHz 780 990 pF 112 150 pF 72 110 pF Ω 1.1 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time 7 14 ns 3 10 td(off) Turn-Off Delay Time ns 19 34 tf ns Fall Time 2 10 ns Qg Total Gate Charge at 10V 16 20 nC Qg Total Gate Charge at 5V 8.6 11 nC Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller”Charge VDD = 20V, ID = 9A VGS = 10V, RGEN = 6Ω VDS= 20V, ID = 9A VGS = 10V 2.5 nC 3.7 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 9A 0.87 1.2 V trr Reverse Recovery Time IF = 9A, di/dt = 100A/µs 25 38 ns Qrr Reverse Recovery Charge IF = 9A, di/dt = 100A/µs 19 29 nC Notes: 1: Pulse time < 300µs, Duty cycle = 2%. 2: Starting TJ = 25oC, L = 0.1mH, IAS = 20A ,VDD = 36V, VGS = 10V. FDD8451 Rev. B1 2 www.fairchildsemi.com FDD8451 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 4.0 ID, DRAIN CURRENT (A) VGS = 10V 50 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 4V 40 VGS = 4.5V 30 VGS = 3.5V 20 10 VGS = 3V 0 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 4 VGS = 3V 2.5 VGS = 3.5V 2.0 VGS = 4V 1.5 VGS = 5V 1.0 0.5 VGS = 10V 0 10 20 30 40 ID, DRAIN CURRENT(A) 50 60 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 160 ID = 9A VGS = 10V 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) ID = 10A 200 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 120 80 TJ = 175oC 40 0 Figure 3. Normalized On Resistance vs Junction Temperature TJ = 25oC 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance vs Gate to Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) 40 ID, DRAIN CURRENT (A) 3.0 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On Region Characteristics PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 3.5 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 30 20 TJ = 175oC 10 TJ = 25oC TJ = -55oC 0 1.5 2.0 2.5 3.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4.0 Figure 5. Transfer Characteristics FDD8451 Rev. B1 VGS = 0V 10 1 0.1 0.01 1E-3 0.0 TJ = 175oC TJ = 25oC TJ = -55oC 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDD8451 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 3000 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 15V VDD = 20V 6 VDD = 25V 4 Coss 100 Crss 2 0 f = 1MHz VGS = 0V 0 4 8 12 Qg, GATE CHARGE(nC) 10 0.1 16 Figure 7. Gate Charge Characteristics 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 30 TJ = 25oC 10 TJ = 125oC TJ = 150oC 1 1E-3 0.01 0.1 1 10 25 20 15 VGS =4.5V 10 5 0 100 VGS = 10V o RθJC = 4.1 C/W 40 60 tAV, TIME IN AVALANCHE(ms) P(PK), PEAK TRANSIENT POWER (W) 100us 1ms 10 10ms SINGLE PULSE TJ = MAX RATED TC = 25OC 0.1 1 100ms DC 10 80 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDD8451 Rev. B1 120 160 175 140 TEMPERATURE(oC) TC = 25oC VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 LIMITED BY PACKAGE OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 100 Figure 10. Maximum Continuous Drain Current vs Case Temperature 10000 100 ID, DRAIN CURRENT (A) 80 TC, CASE Figure 9. Unclamped Inductive Switching Capability 1 40 Figure 8. Capacitance vs Drain to Source Voltage ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) Ciss 1000 I = I25 175 – T C ---------------------150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, PULSE WIDTH (s) 0 10 1 10 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDD8451 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.005 -5 10 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE -4 10 -3 -2 10 10 -1 10 0 10 1 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDD8451 Rev. B1 5 www.fairchildsemi.com FDD8451 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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