FDB8444TS ® N-Channel PowerTrench MOSFET with Temperature Sensor tm 40V, 70A, 5mΩ Features Applications Typ rDS(on) = 3.8mΩ at VGS = 10V, ID = 70A Automotive Engine Control Typ Qg(TOT) = 130nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse and Repetitive Pulse) Distributed Power Architecture and VRMs Qualified to AEC Q101 Primary Switch for 12V Systems RoHS Compliant TO263 5 LEADS ©2007 Fairchild Semiconductor Corporation FDB8444TS Rev. A (W) 1 www.fairchildsemi.com FDB8444TS N-Channel PowerTrench® MOSFET with Temperature Sensor August 2007 Symbol VDSS Drain to Source Voltage VGS ID Parameter Ratings 40 Units V Gate to Source Voltage ±20 V Drain Current Continuous (TC = 140oC, VGS = 10V) 70 Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) 20 Pulsed EAS PD A See Figure 4 Single Pulse Avalanche Energy (Note 1) 439 mJ Power Dissipation 181 W Derate above 25oC 1.2 W/oC -55 to +175 oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA Thermal Resistance Junction to Case 2 Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 0.83 o C/W 43 o C/W Package Marking and Ordering Information Device Marking FDB8444TS Device FDB8444TS Package TO-263 5LDS Reel Size 330mm Tape Width 24mm Quantity 800 units Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units V Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V 40 - - - - 1 - - 250 VGS = ±20V - - ±100 nA VGS = VDS, ID = 250μA 2 2.8 4 V ID = 70A, VGS= 10V - 3.8 5 ID = 70A, VGS= 10V, TJ = 175oC - 6.5 8.5 VDS = 25V, VGS = 0V, f = 1MHz - 8410 - pF - 765 - pF pF VDS = 32V, VGS = 0V TC = 150oC μA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 485 - RG Gate Resistance f = 1MHz - 1.8 - Ω Qg(TOT) Total Gate Charge at 20V VGS = 0 to 20V - 260 338 nC Qg(10) Total Gate Charge at 10V VGS = 0 to 10V - 130 169 nC Qg(TH) Threshold Gate Charge VGS = 0 to 2V - 15.5 - nC Qgs Gate to Source Gate Charge - 33 - nC Qgs2 Gate Charge Threshold to Plateau - 17.7 - nC Qgd Gate to Drain “Miller“ Charge - 30 - nC FDB8444TS Rev. A (W) 2 VDD = 20V ID = 70A www.fairchildsemi.com FDB8444TS N-Channel PowerTrench® MOSFET with Temperature Sensor MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics ton Turn-On Time - - 96 ns td(on) Turn-On Delay Time - 14.6 - ns tr Rise Time td(off) Turn-Off Delay Time tf toff VDD = 20V, ID = 70A VGS = 10V, RGS = 2Ω - 19.1 - ns - 44 - ns Fall Time - 17.3 - ns Turn-Off Time - - 98 ns ISD = 70A - 1.0 1.25 ISD = 40A - 0.9 1.0 Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 70A, dISD/dt = 100A/μs V - 51 66 ns - 70 91 nC Temperature Sense Diode Characteristics Vf Temperature Sense Diode Voltage If = 1mA 1.58 1.61 1.63 V Sf Temperature Sense Diode Temperature Coefficient If = 1mA, -55oC < TJ < 175oC -2.55 -2.74 -3.11 mV/oC Notes: 1: Starting TJ = 25oC, L = 0.28mH, IAS = 56A. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDB8444TS Rev. A (W) 3 www.fairchildsemi.com FDB8444TS N-Channel PowerTrench® MOSFET with Temperature Sensor Electrical Characteristics TC = 25oC unless otherwise noted 160 POWER DISSIPATION MULIPLIER 1.2 ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) Figure 1. Normalized Power Dissipation vs Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 VGS = 10V 120 80 40 0 25 175 CURRENT LIMITED BY PACKAGE 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 2. Maximum Continuous Drain Current vs Case Temperature DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 1E-3 -5 10 -4 -3 10 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 5000 VGS = 10V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK IDM, PEAK CURRENT (A) 1000 CURRENT AS FOLLOWS: 175 - TC I = I2 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDB8444TS Rev. A (W) 4 www.fairchildsemi.com FDB8444TS N-Channel PowerTrench® MOSFET with Temperature Sensor Typical Characteristics 500 1000 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 10us 100 100 100us 10 LIMITED BY PACKAGE 1 1 1ms SINGLE PULSE OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.1 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 10ms DC TJ = MAX RATED o TC = 25 C 10 VDS, DRAIN TO SOURCE VOLTAGE (V) STARTING TJ = 25oC 10 STARTING TJ = 150oC 1 0.01 100 0.1 1 10 100 1000 5000 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area 140 120 ID, DRAIN CURRENT (A) PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX VDD = 5V 100 TJ = 175oC 80 60 o TJ = 25 C o 40 TJ = -55 C VGS = 10V 100 20 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX VGS = 5V 80 VGS = 4.5V 60 40 20 0 2.0 2.5 3.0 3.5 4.0 4.5 0 5.0 VGS, GATE TO SOURCE VOLTAGE (V) 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics 10 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) VGS = 20V 120 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 140 Figure 6. Unclamped Inductive Switching Capability ID = 70A PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 8 6 TJ = 175oC 4 TJ = 25oC 2 0 4 8 12 16 20 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDB8444TS Rev. A (W) 0 4 1.8 1.6 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.4 1.2 1.0 0.8 0.6 -80 ID = 70A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 www.fairchildsemi.com FDB8444TS N-Channel PowerTrench® MOSFET with Temperature Sensor Typical Characteristics 1.2 1.15 1.10 1.0 1.05 0.8 1.00 0.6 0.4 -80 0.95 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.90 -80 200 20000 Ciss 10000 Coss 1000 Crss 100 0.1 f = 1MHz VGS = 0V 50 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature CAPACITANCE (pF) ID = 250μA NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE VGS = VDS ID = 250μA Figure 13. Capacitance vs Drain to Source Voltage 20 ID = 70A VDD = 15V 15 VDD = 20V VDD = 25V 10 5 0 0 50 100 150 200 Qg, GATE CHARGE(nC) 250 300 Figure 14. Gate Charge vs Gate to Source Voltage FORWARD VOLTAGE (Vf) 1.8 If = 1mA 1.6 1.4 1.2 1.0 0 25 50 75 100 125 150 175 200 TJ, JUNCTION TEMPERATURE(oC) Figure 15. Temperature Sense Diode Forward Voltage vs. Juction Temperature FDB8444TS Rev. A (W) 6 www.fairchildsemi.com FDB8444TS N-Channel PowerTrench® MOSFET with Temperature Sensor Typical Characteristics The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 FDB8444TS Rev. A (W) 7 www.fairchildsemi.com FDB8444TS N-Channel PowerTrench® MOSFET with Temperature Sensor TRADEMARKS