FDP8860 N-Channel PowerTrench® MOSFET 30V, 80A, 2.5mΩ Features tm General Description Max rDS(on) = 2.5mΩ at VGS = 10V, ID = 80A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Max rDS(on) = 2.9mΩ at VGS = 4.5V, ID = 80A Low Miller Charge Low Qrr Body Diode UIL Capability (Single Pulse and Repetitive Pulse) Application RoHS Compliant DC - DC Conversion Start / Alternator Sytems D G G D TO-220 S FDP Series S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25°C -Pulsed EAS Single Pulse Avalanche Energy PD Power Dissipation TJ, TSTG Operating and Storage Temperature Units V ±20 V 80 TC = 25°C -Continuous (Silicon limited) Ratings 30 219 (Note 1) (Note 2) A 556 673 mJ 254 W -55 to +175 °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case TO220 0.59 RθJA Thermal Resistance, Junction to Ambient TO220 62 °C/W Package Marking and Ordering Information Device Marking FDP8860 Device FDP8860 ©2006 Fairchild Semiconductor Corporation FDP8860 Rev.B Package TO220AB 1 Reel Size Tube Tape Width N/A Quantity 50 units www.fairchildsemi.com FDP8860 N-Channel PowerTrench® MOSFET September 2006 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 30 ID = 1mA, referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current V mV/°C 22 VDS = 24V, 1 VGS = 0V TJ = 150°C 250 VGS = ±20V µA ±100 nA 2.5 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C -9.6 VGS = 10V, ID = 80A 1.9 2.5 VGS = 5V, ID = 80A 2.0 2.8 VGS = 4.5V, ID = 80A 2.1 2.9 VGS = 10V, ID = 80A, TJ = 150°C 2.9 3.8 VDS = 10V, ID = 80A 3.4 rDS(on) Drain to Source On Resistance gFS Forward Transconductance 1 1.6 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz 9200 12240 pF 1700 2260 pF 1060 1590 pF Ω f = 1MHz 1.7 VDD = 15V, ID = 80A VGS = 5V, RGEN = 3Ω 35 56 ns 135 216 ns 64 103 ns 59 95 ns 158 222 nC 81 114 nC Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V Qg(5) Total Gate Charge at 5V VGS = 0V to 5V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 15V ID = 80A 27 nC 33 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 80A 0.88 1.25 VGS = 0V, IS = 40A 0.81 1.2 IF = 80A, di/dt = 100A/µs V 60 90 ns 74 111 nC Notes: 1: Pulse Test: Pulse Width < 80µs, Duty cycle < 0.5%. 2: Starting TJ =25oC, L= 0.3mH, IAS = 67A,VDD = 27V, VGS = 10V. FDP8860 Rev.B 2 www.fairchildsemi.com FDP8860 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 320 VGS = 4V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 4V 240 VGS = 4.5V VGS = 10V VGS = 3.5V 160 80 VGS =3V 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 3.0 1.5 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 1.7 1.6 VGS = 3V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 3 VGS = 3.5V VGS = 4V 2 VGS = 4.5V 1 VGS = 10V 0 0 80 160 240 ID, DRAIN CURRENT(A) 320 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage ID = 80A VGS = 10V 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) 10 ID = 50A 8 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 6 TJ = 175oC 4 2 TJ = 25oC 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 160 300 100 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On Region Characteristics 4 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 120 80 VDD = 5V TJ = 175oC TJ = 25oC 40 TJ = - 55oC 0 1.0 1.5 2.0 2.5 3.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4.0 Figure 5. Transfer Characteristics FDP8860 Rev.B 10 10 VGS = 0V TJ = 175oC 1 0.1 0.01 1E-3 0.0 TJ = 25oC TJ = -55oC 0.3 0.6 0.9 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDP8860 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 20000 VDD = 12V 8 6 VDD = 15V 4 VDD = 18V 2 0 0 40 80 120 Qg, GATE CHARGE(nC) Ciss Coss Crss 1000 500 160 Figure 7. Gate Charge Characteristics 0.1 200 280 100 240 TJ = 25oC 10 TJ = 175oC -2 10 -1 10 0 10 1 10 2 10 3 10 160 80 tAV, TIME IN AVALANCHE(ms) P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 100us 0.1 1 LIMITED BY PACKAGE OPERATION IN THIS SINGLE PULSE TJ = MAX RATED AREA MAY BE LIMITED BY rDS(on) TC = 25OC 10 VDS, DRAIN-SOURCE VOLTAGE (V) 1ms 10ms DC 50 Figure 11. Forward Bias Safe Operating Area FDP8860 Rev.B 75 100 125 150 175 TC, CASE TEMPERATURE ( C) 10us 1 50 Figure 10. Maximum Continuous Drain Current vs Case Temperature 2000 1000 10 Limited by Package o RθJC = 0.59 C/W o Figure 9. Unclamped Inductive Switching Capability 100 VGS=4.5V 120 0 25 4 10 VGS=10V 200 40 1 -3 10 40 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) f = 1MHz VGS = 0V 10000 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 5 10 VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 4 10 I = I25 175 – T C ----------------------125 TC = 25oC 3 10 SINGLE PULSE 2 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, PULSE WIDTH (s) 0 10 1 10 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDP8860 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 1E-3 -5 10 t2 SINGLE PULSE -4 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC -3 -2 10 10 t, RECTANGULAR PULSE DURATION (s) -1 10 0 10 1 10 Figure 13. Transient Thermal Response Curve FDP8860 Rev.B 5 www.fairchildsemi.com FDP8860 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 FDP8860 Rev. B 6 www.fairchildsemi.com FDP8860 N-Channel PowerTrench® MOSFET TRADEMARKS