FDS7064SN3 30V N-Channel PowerTrench SyncFET™ General Description • The FDS7064SN3 is designed to improve the efficiency of Buck Regulators. Used as the Synchronous rectifier, (Low side MOSFET), losses can be reduced, not only in this device, but also in the Control switch, (High side MOSFET). After the low side MOSFET turns off, reverse recovery current in the body diode is dissipated in the High Side device. A Discrete Schottky diode in parallel with the Low Side MOSFET can lower the reverse recovery current, but parasitic PCB and Package Inductance reduce the effectiveness of the TM technology reduces this Schottky. SyncFET inductance to a minimum by providing a monolithic solution (MOSFET and Schottky in the same die), resulting in optimum performance. • 16 A, 30 V RDS(ON) = 8.0 mΩ @ VGS = 10 V RDS(ON) = 9.5 mΩ @ VGS = 4.5 V • High performance trench technology for extremely low RDS(ON) • No inductance between MOSFET and Schottky • 40% reduction in Body Diode Forward Voltage • Optimized to reduce losses in Synchronous Buck Regulators • FLMP SO-8 package for enhanced thermal Applications • Features performance. Synchronous Rectifier D DNC NC D DNC NC 5 D G S G SS S SS FLMP SO-8 Pin 1SO- Absolute Maximum Ratings Symbol VDSS Parameter Gate-Source Voltage ID Drain Current – Continuous (Note 1a) – Pulsed TJ, TSTG 6 3 7 2 8 1 Ratings Units 30 V ±16 V 16 A 60 Power Dissipation for Single Operation PD 4 TA=25oC unless otherwise noted Drain-Source Voltage VGSS Bottom-side Drain Contact (Note 1a) 3.13 (Note 1b) 1.5 Operating and Storage Junction Temperature Range –55 to +150 W °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) 40 °C/W (Note 1) 0.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS7064SN3 FDS7064SN3 13’’ 12mm 2500 units 2004 Fairchild Semiconductor Corporation FDS7064SN3 Rev C1 (W) FDS7064SN3 February 2004 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = 1 mA Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA Gate–Body Leakage VGS = ±16 V, VDS = 0 V ±100 nA 3 V On Characteristics 30 V 26 ID = 10 mA, Referenced to 25°C mV/°C (Note 2) VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VDS = VGS, ID = 1 mA gFS Forward Transconductance 1 1.4 ID = 10 mA, Referenced to 25°C –2 VGS = 10 V, VGS = 4.5 V, VGS = 10 V, VDS = 10 V, 6.5 7.5 9.1 70 ID = 16 A ID = 14 A ID = 16 A, TJ = 125°C ID = 16 A mV/°C 8.0 9.5 11.5 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance 2800 pF 530 pF 190 pF VGS = 15 mV, f = 1.0 MHz 1.4 Ω VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 11 20 ns 20 22 ns VDS = 15 V, V GS = 0 V, f = 1.0 MHz Switching Characteristics (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time 50 80 ns tf Turn–Off Fall Time 18 33 ns Qg Total Gate Charge 25 35 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 15 V, ID = 16 A, VGS = 5.0 V 6 nC 6 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD tRR QRR Maximum Continuous Drain–Source Schottky Diode Forward Current Drain–Source Schottky Diode (Note 2) VGS = 0 V, IS = 4.3 A Forward Voltage IF = 16 A Reverse Recovery Time diF/dt = 300 A/us Reverse Recovery Charge 0.4 4.3 A 0.7 V 22 ns 20 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 40°C/W when mounted on a 1in2 pad of 2 oz copper b) 85°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS7064SN3 Rev C1 (W) FDS7064SN3 Electrical Characteristics FDS7064SN3 Typical Characteristics 60.00 2.25 ID, DRAIN CURRENT (A) 50.00 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS=10.0 V 3.5V 6.0V 40.00 4.5V 2.5V 30.00 20.00 10.00 2.0V VGS = 2.5V 2 1.75 3.0V 1.5 3.5V 4.0V 1.25 4.5V 0.25 0.50 0.75 1.00 1.25 1.50 0 10 20 VDS, DRAIN-SOURCE VOLTAGE (V) 30 40 50 60 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 40 1.60 ID = 16A VGS = 10V RDS(ON), ON-RESISTANCE (MILLIOHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10.0V 0.75 0.00 0.00 1.40 1.20 1.00 0.80 0.60 -50 -25 0 25 50 75 100 125 ID =8A 30 20 TA = 125oC 10 TA = 25oC 0 150 0 o TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation withTemperature. 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 60 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 50 ID, DRAIN CURRENT (A) 6.0V 1 40 30 TA = 125oC 25oC 20 10 o -55 C 0 VGS = 0V 10 TA = 125oC o 1 25 C o -55 C 0.1 0.01 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0.1 0.3 0.5 0.7 0.9 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS7064SN3 Rev C1 (W) FDS7064SN3 Typical Characteristics 4000 ID = 16A f = 1MHz VGS = 0 V 8 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 VDS = 10V 6 15V 4 20V 3000 Ciss 2000 Coss 1000 Crss 2 0 0 0 0 10 20 30 Qg, GATE CHARGE (nC) 40 50 Figure 7. Gate Charge Characteristics. P(pk), PEAK TRANSIENT POWER (W) 100µs 1ms ID, DRAIN CURRENT (A) 15 20 50 RDS(ON) LIMIT 10 10ms 100ms 1s DC 1 VGS = 10V SINGLE PULSE RθJA = 85oC/W TA = 25oC 0.01 0.01 0.1 1 10 30 20 10 0 0.01 100 SINGLE PULSE RθJA = 85°C/W TA = 25°C 40 0.1 VDS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 Figure 8. Capacitance Characteristics. 100 0.1 5 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA 0.2 0.1 o RθJA = 85 C/W 0.1 0.05 0.01 P(pk) 0.02 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDS7064SN3 Rev C1 (W) FDS7064SN3 Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS7064SN3. 0.04A/div Figure 12. FDS7064SN3 SyncFET body diode reverse recovery characteristic. 12.5 nS/div IDSS, REVERSE LEAKAGE CURRENT (A) Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.1 TA = 125oC 0.01 TA = 100oC 0.001 0.0001 TA = 25oC 0.00001 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) Figure 13. SyncFET body diode reverse leakage versus drain-source voltage and temperature FDS7064SN3 Rev C1 (W) FDS7064SN3 Dimensional Outline and Pad Layout 2004 Fairchild Semiconductor Corporation FDS7064SN3 Rev C1 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOSTM HiSeC™ EnSignaTM I2C™ FACT™ ImpliedDisconnect™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I8