2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A. High Power Dissipation : 150watts. High Frequency : 30MHz. High Voltage : VCEO=230V Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to 2SA1943/FJL4215. Thermal and electrical Spice models are available. Same transistor is also available in: -- TO3P package, 2SC5242/FJA4313 : 130 watts -- TO220 package, FJP5200 : 80 watts -- TO220F package, FJPF5200 : 50 watts Absolute Maximum Ratings* Symbol TO-264 1 1.Base 2.Collector 3.Emitter Ta = 25°C unless otherwise noted Parameter Ratings Units BVCBO Collector-Base Voltage 230 V BVCEO Collector-Emitter Voltage 230 V BVEBO Emitter-Base Voltage 5 V IC Collector Current(DC) 15 A IB Base Current 1.5 A PD Total Device Dissipation(TC=25°C) Derate above 25°C 150 1.04 W W/°C TJ, TSTG Junction and Storage Temperature - 50 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* Symbol RθJC Ta=25°C unless otherwise noted Parameter Thermal Resistance, Junction to Case Max. Units 0.83 °C/W * Device mounted on minimum pad size hFE Classification Classification R O hFE1 55 ~ 110 80 ~ 160 © 2008 Fairchild Semiconductor Corporation 2SC5200/FJL4315 Rev. A2 www.fairchildsemi.com 1 2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor March 2008 a Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=5mA, IE=0 230 V BVCEO Collector-Emitter Breakdown Voltage IC=10mA, RBE=∞ 230 V BVEBO Emitter-Base Breakdown Voltage IE=5mA, IC=0 5 V ICBO Collector Cut-off Current VCB=230V, IE=0 5.0 µA IEBO Emitter Cut-off Current VEB=5V, IC=0 5.0 µA hFE1 DC Current Gain VCE=5V, IC=1A 55 hFE2 DC Current Gain VCE=5V, IC=7A 35 VCE(sat) Collector-Emitter Saturation Voltage IC=8A, IB=0.8A 0.4 3.0 V VBE(on) Base-Emitter On Voltage VCE=5V, IC=7A 1.0 1.5 V fT Current Gain Bandwidth Product VCE=5V, IC=1A 30 MHz Cob Output Capacitance VCB=10V, f=1MHz 200 pF 160 60 * Pulse Test: Pulse Width=20µs, Duty Cycle≤2% Ordering Information Part Number Marking Package Packing Method 2SC5200RTU C5200R TO-264 TUBE hFE1 R grade 2SC5200OTU C5200O TO-264 TUBE hFE1 O grade FJL4315RTU J4315R TO-264 TUBE hFE1 R grade FJL4315OTU J4315O TO-264 TUBE hFE1 O grade © 2008 Fairchild Semiconductor Corporation 2SC5200/FJL4315 Rev. A2 Remarks www.fairchildsemi.com 2 2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor Electrical Characteristics* T =25°C unless otherwise noted 2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor Typical Characteristics 16 IB=200mA IB = 180mA IB = 160mA IB = 140mA IB = 120mA 12 o IB = 100mA 10 o Tj=125 C hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 14 IB = 80mA 8 IB = 60mA 6 IB = 40mA 4 2 Tj=25 C Vce=5V 100 o Tj=-25 C 10 IB = 0 0 0 2 4 6 8 10 12 14 16 18 20 1 1 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. DC current Gain 10000 Vce(sat)[mV], SATURATION VOLTAGE Vbe(sat)[mV], SATURATION VOLTAGE 10000 Ic=10Ib o Tj=-25 C o Tj=25 C 1000 o Tj=125 C 100 0.1 1 10 Ic=10Ib 1000 Tj=25? 100 Tj=125? Tj=-25? 10 1 0.1 1 Ic[A], COLLECTOR CURRENT Figure 4. Collector-Emitter Saturation Voltage Transient Thermal Resistance, Rthjc[ C / W] 12 1.0 0.9 o VCE = 5V 10 IC[A], COLLECTOR CURRENT 10 Ic[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage 8 6 4 2 0 0.0 10 Ic[A], COLLECTOR CURRENT 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 Pulse duration [sec] VBE[V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage Figure 6. Thermal Resistance © 2008 Fairchild Semiconductor Corporation 2SC5200/FJL4315 Rev. A2 0.8 www.fairchildsemi.com 3 100 160 IC MAX. (Pulsed*) IC [A], COLLECTOR CURRENT PC[W], POWER DISSIPATION 140 120 100 80 60 40 20 10ms* 10 IC MAX. (DC) 100ms* DC 1 0.1 *SINGLE NONREPETITIVE o PULSE TC=25[ C] 0.01 0 0 25 50 75 100 125 150 1 175 o TC[ C], CASE TEMPERATURE 100 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 7. Power Derating Figure 8. Safe Operating Area © 2008 Fairchild Semiconductor Corporation 2SC5200/FJL4315 Rev. A2 10 www.fairchildsemi.com 4 2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor Typical Characteristics 2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor Package Dimensions (8.30) (1.00) (2.00) 20.00 ±0.20 0 1.50 ±0.20 ) (7.00) (7.00) 2.50 ±0.10 4.90 ±0.20 (1.50) (1.50) 2.50 ±0.20 3.00 ±0.20 (1.50) 20.00 ±0.50 ±0.2 .00 (2.00) (11.00) ) .00 2 (R (R1 (0.50) 0 ø3.3 (9.00) (9.00) (8.30) (4.00) 20.00 ±0.20 6.00 ±0.20 TO-264 +0.25 1.00 –0.10 +0.25 0.60 –0.10 2.80 ±0.30 (2.80) 5.45TYP [5.45 ±0.30] (0.15) (1.50) 3.50 ±0.20 5.00 ±0.20 5.45TYP [5.45 ±0.30] Dimensions in Millimeters © 2008 Fairchild Semiconductor Corporation 2SC5200/FJL4315 Rev. A2 www.fairchildsemi.com 5 The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM ® PDP-SPM™ Power220® SuperSOT™-8 SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 2. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 © 2008 Fairchild Semiconductor Corporation 2SC5200/FJL4315 Rev. A2 www.fairchildsemi.com 6 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor TRADEMARKS