FJP2160D
ESBCTM Rated NPN Silicon Transistor
Applications
Description
• High Voltage and High Speed Power Switch
Application
• Emitter-Switched Bipolar/MOSFET Cascode
Application (ESBCTM)
• Smart Meter, Smart Breakers,
HV Industrial Power Supplies
• Motor Driver and Ignition Driver
The FJP2160D is a low-cost, high performance power
switch designed to provide the best performance when
used in an ESBCTM configuration in applications such as:
power supplies, motor drivers, Smart Grid, or ignition
switches. The power switch is designed to operate up to
1600 volts and up to 3amps while providing exceptionally
low on-resistance and very low switching losses.
The ESBCTM switch is designed to be easy to drive using
off-the-shelf power supply controllers or drivers. The
ESBCTM MOSFET is a low-voltage, low-cost, surface
mount device that combines low-input capacitance and
fast switching, The ESBCTM configuration further minimizes the required driving power because it does not
have Miller capacitance.
ESBC Features (FDC655 MOSFET)
VCS(ON)
IC
Equiv RCS(ON)
0.131 V
0.5 A
0.261 Ω ∗
•
•
•
•
•
Low Equivalent On Resistance
Very Fast Switch : 150KHz
Squared RBSOA : Up to 1600Volts
Avalanche Rated
Low Driving Capacitance, no Miller Capacitance
(Typ 12pF Cap @ 200volts)
• Low Switching Losses
• Reliable HV switch : No False Triggering due to
High dv/dt Transients.
The FJP2160D provides exceptional reliability and a
large operating range due to its square reverse-bias-safeoperating-area (RBSOA) and rugged design. The device
is avalanche rated and has no parasitic transistors so is
not prone to static dv/dt failures.
C
C
(2)
FJP2160D
B
(1)
B
FDC655
TO-220
1
1.Base
2.Collector
G
E
3.Emitter
(3)
S
Figure 1. Pin Configuration
Figure 2. Internal Schematic Diagram Figure 3. ESBC Configuration**
Ordering Information
Part Number
Marking
Package
Packing Method
FJP2160DTU
J2160D
TO-220
TUBE
Remarks
* Figure of Merit
** Other Fairchild MOSFETs can be used in this ESBC application.
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. A0
www.fairchildsemi.com
1
TM Rated NPN Silicon Transistor
FJP2160D — ESBCTM
May 2012
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
IBP
PD
TJ
TSTG
EAS
TM Rated NPN Silicon Transistor
FJP2160D — ESBCTM
Absolute Maximum Ratings *
Ta = 25°C unless otherwise noted
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Base Current (Pulse)
Power Dissipation (TC = 25°C)
Operating and Junction Temperature Range
Storage Temperature Range
Avalanche Energy (TJ = 25°C, 8mH)
Value
Units
1600
800
12
2
3
1
2
100
- 55 ~ +125
- 65 ~ +150
3.5
V
V
V
A
A
A
A
W
°C
°C
mJ
Max.
Units
1.25
80
°C/W
°C/W
* Pulse Test: Pulse Width = 20μs, Duty Cycle ≤ 10%
Thermal Characteristics
Symbol
Rθjc
Rθja
Ta = 25°C unless otherwise note
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Electrical Characteristics
Ta = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Typ.
BVCBO
BVCEO
BVEBO
ICES
ICEO
IEBO
hFE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
1600
800
12
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
Cib
Cob
fT
VF
Input Capacitance
Output Capacitance
Current Gain Bandwidth Product
Diode Forward Voltage
IC=0.5mA, IE=0
IC=5mA, IB=0
IE=0.5mA, IC=0
VCES=1600V, IE=0
VCE=800V, VBE=0
VEB=12V, IC=0
VCE=3V, IC=0.4A
VCE=10V, IC=5mA
IC=0.25A, IB=0.05A
IC=0.5A, IB=0.167A
IC=1A, IB=0.33A
IC=500mA, IB=50mA
IC=2A, IB=0.4A
VEB=10V, IC=0, f=1MHz
VCB=200V, IE=0, f=1MHz
IC=0.1A,VCE=10V
IF=0.4A
IF=1A
1689
870
14.8
0.01
0.01
0.05
29
43
0.16
0.12
0.25
0.74
0.85
745
15
5
0.76
0.83
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. A0
20
20
Max.
100
100
500
35
0.45
0.35
0.75
1.2
1.2
1000
1.2
1.5
Units
V
V
V
μA
μA
μA
V
V
V
V
V
pF
pF
MHz
V
V
www.fairchildsemi.com
2
Ta = 25°C unless otherwise noted
Symbol
Parameter
fT
Itf
ts
Vtf
Vtr
tc
Itf
ts
Vtf
Vtr
tc
VCSW
IC=0.1A,VCE=10V
IGS(OS)
Current Gain Bandwidth Product
Inductive Current Fall Time
Inductive Storage Time
Inductive Voltage Fall Time
Inductive Voltage Rise Time
Inductive Crossover Time
Inductive Current Fall Time
Inductive Storage Time
Inductive Voltage Fall Time
Inductive Voltage Rise Time
Inductive Crossover Time
Maximum Collector Source Voltage at Turn-off without Snubber
Gate-Source Leakage Current
VCS(ON)
Collector-Source On Voltage
VGS=10V, IC=2A, IB=0.67A, hFE=3
VGS=10V, IC=1A, IB=0.33A, hFE=3
VGS=10V, IC=0.5A,IB=0.17A,hFE=3
VGS=10V, IC=0.3A, IB=0.06A, hFE=5
VGS(th)
Gate Threshold Voltage
VBS=VGS, IB=250μA
Ciss
QGS(tot)
rDS(ON)
Test Condition
VGS=10V, RG=47Ω,
VClamp=500V,
tp= 3.1μs, IC=0.3A,
IB=0.03A, LC=1mH,
SRF=480KHz
VGS=10V, RG=47Ω,
VClamp=500V,
tp= 10μs, IC=1A,
IB=0.2A, LC=1mH,
SRF=480KHz
hFE=5, IC=2A
VGS=±20V
Input Capacitance (VGS=VCB=0) VCS=25V, f=1MHz
VGS=10V, IC=8A, VCS=25V
Gate-Source Change VCB=0
Static Drain to Source
On Resistance
Min.
VGS=10V, ID=6.3A
VGS=4.5V, ID=5.5A
VGS=10V, ID=6.3A, TJ=125°C
Typ.
Max. Units
25
137
350
120
100
137
35
980
30
195
210
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
1600
1.0
nA
2.21
0.321
0.131
0.166
1.9
V
V
V
V
V
470
pF
9
nC
21
26
30
mΩ
mΩ
mΩ
* Used typical FDC655 MOSFET values in table. Could vary if other Fairchild MOSFETs were used.
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. A0
www.fairchildsemi.com
3
TM Rated NPN Silicon Transistor
FJP2160D — ESBCTM
ESBC Configured Electrical Characteristics *
TM Rated NPN Silicon Transistor
FJP2160D — ESBCTM
Typical Performance Characteristics
3
VCE=10V
2
100
o
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
1A
900mA
800mA
700mA
600mA
500mA
400mA
300mA
200mA
IB=100mA
1
TJ=125 C
o
TJ=25 C
10
1
0
0
1
2
3
4
5
6
1
7
Figure 4. Static Characteristic
1000
100
IC = 5 IB
IC = 3 IB
VCE(sat) [V], SATURATION VOLTAGE
VCE(sat) [V], SATURATION VOLTAGE
100
Figure 5. DC current Gain
100
10
o
Ta = 125 C
1
o
Ta = 25 C
0.1
o
Ta = - 25 C
0.01
1E-3
0.01
0.1
1
10
o
Ta = 25 C
o
Ta = -25 C
0.1
1E-3
10
0.1
1
10
Figure 7. Collector-Emitter Saturation Voltage
hFE=5
100
100
IC = 20 IB
VCE(sat) [V], SATURATION VOLTAGE
IC = 10 IB
10
o
Ta = 125 C
o
Ta = 25 C
1
o
Ta = -25 C
0.01
0.1
1
10
o
Ta = 125 C
o
Ta = 25 C
1
o
Ta = -25 C
0.1
1E-3
10
0.01
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 8. Collector-Emitter Saturation Voltage
hFE=10
Figure 9. Collector-Emitter Saturation Voltage
hFE=20
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. A0
0.01
IC [A], COLLECTOR CURRENT
Figure 6. Collector-Emitter Saturation Voltage
hFE=3
0.1
1E-3
o
Ta = 125 C
1
IC [A], COLLECTOR CURRENT
VCE(sat) [V], SATURATION VOLTAGE
10
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR EMITTER VOLTAGE
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4
2
1000
o
TJ=25 C
2.0A
CAPACITANCE [pF]
VCE[V], VOLTAGE
3.0A
1.0A
1
0.4A
IC=0.2A
100
Cob (Emitter Open)
10
Cob (Emitter Grounded)
1
0
1
10
100
1
1k
10
100
1000
Figure 10. Typical Collector Saturation Voltage
Figure 11. Capacitance
2.0
250
o
o
ta = 25 C L=1mH SRF=480KHz
225
ta = 25 C L=1mH SRF=480KHz
1.8
hfe=10 common emitter
200
1.6
175
1.4
Time [us]
150
Time [ns]
10000
COLLECTOR-BASE VOLTAGE[V]
IB[mA], BASE CURRENT
125
hfe=5 common emitter
100
hfe=10 common emitter
hfe=5 common emitter
1.2
1.0
hfe=5 ESBC
0.8
75
0.6
50
25
hfe=10 ESBC
0.4
hfe=5 ESBC
hfe=10 ESBC
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.2
0.2
2.0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 12. Inductive Load
Collector Current Fall-time (tf)
Figure 13. Inductive Load
Collector Current Storage time (tstg)
300
200
o
o
ta = 25 C L=1mH SRF=480KHz
180
ta = 25 C L=1mH SRF=480KHz
280
260
240
140
220
120
200
100
Time [ns]
Time [ns]
160
hfe=10 common emitter
80
hfe=10 ESBC
60
0
0.2
160
hfe=5 common emitter
140
hfe=10 common emitter
100
80
hfe=5 common emitter
hfe=5 ESBC
0.4
0.6
0.8
1.0
1.2
hfe=10 ESBC
60
1.4
1.6
1.8
0.2
2.0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 14. Inductive Load
Collector Voltage Fall-time (tf)
Figure 15. Inductive Load
Collector Voltage Rise-time (tr)
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. A0
180
120
40
20
hfe=5 ESBC
www.fairchildsemi.com
5
TM Rated NPN Silicon Transistor
FJP2160D — ESBCTM
Typical Performance Characteristics (Continued)
300
3
o
ta = 25 C L=1mH SRF=480KHz
280
VDD = +/-50V, RLOAD = 500KΩ
IC [A], COLLECTOR CURRENT
260
240
hfe=5 ESBC
Time [ns]
220
200
hfe=10 common emitter
180
hfe=5 common emitter
160
140
hfe=10 ESBC
120
VBE(off) = 5V
2
1
100
0
80
0.2
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
200
400
600
800
1000
1200
1400
1600
1800
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CURRENT
Figure 16. Inductive Load
Collector Current/Voltage Crossover (tc)
Figure 17. BJT Reverse Bias Safe Operating Area
3
o
TC = 25 C
HFE = 4
IC [mA], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
VDD = +/-50V, RLOAD = 500Kohms
2
1
Single 80us Pulse
10
1
0.1
0
0
200
400
600
800
1000
1200
1400
1600
1800
0
2000
500
1000
1500
2000
VCE [V], COLLECTOR-EMITTER VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 18. ESBC RBSOA
Figure 19. Crossover Forward Bias Safe Operating
Area
PD [W], POWER DISSIPATION
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
200
C o
T [ C], CASE TEMPERATURE
Figure 20. Power Derating
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. A0
www.fairchildsemi.com
6
TM Rated NPN Silicon Transistor
FJP2160D — ESBCTM
Typical Performance Characteristics (Continued)
TM Rated NPN Silicon Transistor
FJP2160D — ESBCTM
Test Circuits
Figure 21. Test Circuit For Inductive Load and Reverse Bias Safe Operating
}
}
sT
sT
}
pj A
pi
pj A
A
k|{
k|{
R\G}
Figure 22. Energy Rating Test Circuit
VCE
Figure 24. FBSOA
Figure 23. Ft Measurement
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. A0
www.fairchildsemi.com
7
TM Rated NPN Silicon Transistor
FJP2160D — ESBCTM
Test Circuits (Continued)
Figure 25. Simplified Saturated Switch Driver Circuit
Functional Test Waveforms
Figure 26. Crossover Time Measurement
90% Vce
90% Ic
10% Vce
10% Ic
Figure 27. Saturated Switching Waveform
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. A0
www.fairchildsemi.com
8
Figure 29. Storage Time - ESBC FET
Gate (off) to Ic Fall-time
Figure 28. Storage Time - Common Emitter
Base turn off (Ib2) to Ic Fall-time
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. A0
www.fairchildsemi.com
9
TM Rated NPN Silicon Transistor
FJP2160D — ESBCTM
Functional Test Waveforms (Continued)
- 8watt; SecReg: 3 cap input; Quasi Resonant
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Figure 30. Very Wide Input Voltage Range Supply
Driving ESBC Switches
Fairchild
Proprietary
Figure 31. Vcc Derived
Figure 32. Vbias Supply Derived
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. A0
Figure 33. Proportional Drive
www.fairchildsemi.com
10
TM Rated NPN Silicon Transistor
FJP2160D — ESBCTM
Very Wide Input Voltage Range Supply
TM Rated NPN Silicon Transistor
FJP2160D — ESBCTM
Physical Dimensions
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. A0
www.fairchildsemi.com
11
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I61
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