FGA180N33ATD 330 V PDP Trench IGBT Features General Description • High Current Capability Using novel trench IGBT Technology, Fairchild®’s new series of trench IGBTs offer the optimum performance for PDP TV applications where low conduction and switching losses are essential. • Low Saturation Voltage: VCE(sat) = 1.68 V @ IC = 180 A • High Input Impedance • RoHS Complaint Applications • PDP TV C G TO-3P E G DS Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC ICM (1) PD Ratings Unit 330 V ± 30 V Collector Current @ TC = 25oC 180 A Pulsed Collector Current @ TC = 25oC 450 A 25oC Maximum Power Dissipation @ TC = Maximum Power Dissipation @ TC = 100oC 390 W 156 W TJ Operating Junction Temperature -55 to +150 o Tstg Storage Temperature Range -55 to +150 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 oC C Notes: 1: Repetitive test, pulse width = 100usec, Duty = 0.1 * IC_pulse limited by max Tj Thermal Characteristics Symbol Parameter Typ. Max. Unit RθJC(IGBT) Thermal Resistance, Junction to Case - 0.32 oC/W RθJC(Diode) Thermal Resistance, Junction to Case - 0.82 o 40 o RθJA Thermal Resistance, Junction to Ambient ©2011 Fairchild Semiconductor Corporation FGA180N33ATD Rev. C0 - 1 C/W C/W www.fairchildsemi.com FGA180N33ATD 330 V PDP Trench IGBT April 2013 Packaging Device Marking Device Package Type Qty per Tube Max Qty per Box FGA180N33ATD FGA180N33ATDTU TO-3P Tube 30ea - Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 400µA 330 - - V ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 400 µA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA IC = 250uA, VCE = VGE 2.5 4.0 5.5 V On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V - 1.1 1.4 V IC = 180A, VGE = 15V, - 1.68 - V IC = 180A, VGE = 15V TC = 125oC - 1.89 - V - 3880 - pF - 305 - pF - 180 - pF - 27 - ns - 80 - ns - 108 - ns - 180 240 ns - 26 - ns - 75 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge ©2011 Fairchild Semiconductor Corporation FGA180N33ATD Rev. C0 VCC = 200V, IC = 40A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 25oC VCC = 200V, IC = 40A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 125oC VCE = 200V, IC = 40A, VGE = 15V 2 - 112 - ns - 250 300 ns - 169 - nC - 22 - nC - 69 - nC www.fairchildsemi.com FGA180N33ATD 330 V PDP Trench IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Cyrrent Qrr Diode Reverse Recovery Charge TC = 25°C unless otherwise noted Test Conditions IF = 20A IES =20A, dI/dt = 200A/µs Min. Typ. Max TC = 25oC - 1.2 1.6 TC = 125oC - 1.04 - TC = 25oC - 27 - o TC = 125 C - 39 - TC = 25oC - 3.5 - - 6.0 - TC = 25oC - 48 - o - 117 - TC = ©2011 Fairchild Semiconductor Corporation FGA180N33ATD Rev. C0 125oC TC = 125 C 3 Unit V ns A nC www.fairchildsemi.com FGA180N33ATD 330 V PDP Trench IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics 200 200 o o Collector Current, IC [A] 20V TC = 125 C 10V 9V 20V 8V 150 Collector Current, IC [A] TC = 25 C 15V 12V 100 7V 50 10V 9V 150 8V 15V 12V 100 7V 50 VGE = 6V VGE = 6V 0 0 0 2 4 Collector-Emitter Voltage, VCE [V] 6 0 Figure 3. Typical Saturation Voltage Characteristics 200 Common Emitter VCE = 20V Common Emitter VGE = 15V o o TC = 25 C 150 Collector Current, IC [A] Collector Current, IC [A] 6 Figure 4. Transfer Characteristics 200 o TC = 125 C 100 50 TC = 25 C 150 o TC = 125 C 100 50 0 0 0 1 2 Collector-Emitter Voltage, VCE [V] 2 3 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Common Emitter 180A 1.5 90A 1.2 40A 0.9 o TC = 25 C 16 12 8 180A 90A 4 40A IC = 20A IC = 20A 0.6 25 0 50 75 100 125 150 o Collector-EmitterCase Temperature, TC [ C] ©2011 Fairchild Semiconductor Corporation FGA180N33ATD Rev. C0 10 20 Common Emitter VGE = 15V 1.8 4 6 8 Gate-Emitter Voltage,VGE [V] Figure 6. Saturation Voltage vs. VGE Collector-Emitter Voltage, VCE [V] 2.1 Collector-Emitter Voltage, VCE [V] 2 4 Collector-Emitter Voltage, VCE [V] 4 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA180N33ATD 330 V PDP Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics 6000 20 Common Emitter VGE = 0V, f = 1MHz Common Emitter o 16 TC = 25 C Cies Capacitance [pF] Collector-Emitter Voltage, VCE [V] o TC = 125 C 12 8 180A 4000 Coes 2000 90A 40A 4 Cres IC = 20A 0 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 1 20 Figure 9. Gate charge Characteristics 10 Collector-Emitter Voltage, VCE [V] 30 Figure 10. SOA Characteristics 1000 15 IC MAX (Pulse) Common Emitter TC = 25 C 10µs 12 Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] o VCC = 100V 200V 9 6 3 100 100µs 1ms 10ms 10 IC MAX (Continuous) DC Operation *Notes: 1 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.1 0 0 30 60 90 120 Gate Charge, Qg [nC] 150 1 180 Figure 11. Turn-on Characteristics vs. Gate Resistance 10 100 Collector-Emitter Voltage, VCE [V] Figure 12. Turn-off Characteristics vs. Gate Resistance 5000 500 Common Emitter VCC = 200V, VGE = 15V IC = 40A Switching Time [ns] o Switching Time [ns] 1000 tr 100 td(on) Common Emitter VCC = 200V, VGE = 15V IC = 40A td(off) TC = 25 C o TC = 125 C 1000 tf o TC = 25 C 100 o TC = 125 C 70 10 0 20 40 60 80 Gate Resistance, RG [Ω] ©2011 Fairchild Semiconductor Corporation FGA180N33ATD Rev. C0 100 0 20 40 60 80 100 Gate Resistance, RG [Ω] 5 www.fairchildsemi.com FGA180N33ATD 330 V PDP Trench IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current Figure 14. Turn-off Characteristics vs. Collector Current 1000 2000 Common Emitter VGE = 15V, RG = 15Ω o TC = 25 C 1000 tf o Switching Time [ns] Switching Time [ns] TC = 125 C tr 100 td(off) 10 td(on) Common Emitter VGE = 15V, RG = 15Ω o TC = 25 C o TC = 125 C 100 10 30 60 90 120 150 1 10 180 30 60 Collector Current, IC [A] Figure 15. Turn off Switching SOA Characteristics 120 150 180 Figure 16. Forward Characteristics 100 500 100 Forward Current, IF [A] Collector Current, IC [A] 90 Collector Current, IC [A] 10 o TJ = 25 C 10 o TJ = 125 C o TC = 25 C Safe Operating Area o TC = 125 C o VGE = 15V, TC = 125 C 1 1 10 100 Collector-Emitter Voltage, VCE [V] ©2011 Fairchild Semiconductor Corporation FGA180N33ATD Rev. C0 1 0.0 400 6 0.5 1.0 1.5 2.0 Forward Voltage, VF [V] 2.5 www.fairchildsemi.com FGA180N33ATD 330 V PDP Trench IGBT Typical Performance Characteristics Figure 19. Reverse Recovery Current Figure 20. Stored Charge 60 Stored Recovery Charge, Qrr [nC] Reverse Recovery Currnet, Irr [A] 4 200A/µs 3 2 di/dt = 100A/µs 1 5 10 15 20 25 30 Forward Current, IF [A] 35 40 35 40 200A/µs 50 40 30 di/dt = 100A/µs 20 10 5 10 15 20 25 30 Forward Current, IF [A] 35 40 Figure 21.Reverse Recovery Time Reverse Recovery Time, trr [ns] 40 di/dt = 100A/µs 30 200A/µs 20 10 5 10 15 20 25 30 Forward Current, IF [A] Figure 22.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.1 0.05 PDM 0.01 0.02 t1 0.01 single pulse 1E-3 1E-5 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] ©2011 Fairchild Semiconductor Corporation FGA180N33ATD Rev. C0 7 www.fairchildsemi.com FGA180N33ATD 330 V PDP Trench IGBT Typical Performance Characteristics FGA180N33ATD 330 V PDP Trench IGBT Mechanical Dimensions TO-3PN Dimensions in Millimeters ©2011 Fairchild Semiconductor Corporation FGA180N33ATD Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2011 Fairchild Semiconductor Corporation FGA180N33ATD Rev. 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