FJB3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C B 1 D2-PAK 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 8 A ICP * Collector Current (Pulse) 16 A IB Base Current (DC) 4 A IBP * Base Current (Pulse) 8 A TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to 150 °C Value Units 1.72 80 W W * Pulse Test: PW = 300μs, Duty Cycle = 2% Pulsed Thermal Characteristics Symbol Parameter PD Total Device Dissipation Ta = 25°C Tc = 25°C Rθja Thermal Resistance, Junction to Ambient 72.5 °C/W Rθjc Thermal Resistance, Junction to Case 1.56 °C/W © 2012 Fairchild Semiconductor Corporation FJB3307D Rev. A1 www.fairchildsemi.com 1 FJB3307D — High Voltage Fast Switching NPN Power Transistor March 2012 Symbol Ta = 25°C unless otherwise noted Parameter Conditions Typ. Max. Units Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 BVEBO Emitter-Base Breakdown Voltage IE = 500μA, IC = 0 IEBO Emitter Cut-off Current VEB = 9V, IC = 0 hFE1 hFE2 DC Current Gain VCE = 5V, IC = 2A VCE = 5V, IC = 5A VCE(sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 5A, IB = 1A, Ta = 100°C IC = 8A, IB = 2A 1 2 3 3 V V V V VBE(sat) Base-Emitter Saturation Voltage IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 5A, IB = 1A, Ta = 100°C 1.2 1.6 2 V V V VF Diode Forward Voltage IC = 3A 2.5 V Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz tSTG Storage Time tF tSTG tF Fall Time Storage Time Fall Time IC = 500μA, IE = 0 Min. BVCBO 700 V 400 V 9 V 1 8 5 mA 40 30 60 pF 3 VCC = 125V, IC = 5A IB1 = -IB2 = 1A, RL = 50Ω VCC = 30V, IC = 5A, L=200μH IB1=1A, RBB = 0Ω, VBE(OFF)= -5V, VCLAMP = 250V μs 0.7 μs 2.3 μs 150 ns * Pulse test: PW = 300μs, Duty Cycle = 2% Pulsed hFE Classification Classification H1 H2 hFE1 15 ~ 28 26 ~ 39 © 2012 Fairchild Semiconductor Corporation FJB3307D Rev. A1 www.fairchildsemi.com 2 FJB3307D — High Voltage Fast Switching NPN Power Transistor Electrical Characteristics Figure 1. Static Characteristic Figure 2. DC Current Gain 5.0 100 Ta = 125 C hFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT Ta = 75 C o IB=250mA 4.0 IB=200mA 3.5 IB=150mA 3.0 IB=100mA 2.5 2.0 IB=50mA 1.5 VCE = 5V o IB=300mA 4.5 o Ta = 25 C o Ta = - 25 C 10 1.0 0.5 0.0 1.2 2.4 3.6 4.8 6.0 7.2 8.4 9.6 10.8 1 0.1 12.0 1 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 10 100 IC = 5 IB VBE(sat)[V], SATURATION VOLTAGE VCE(sat),[V] SATURATION VOLTAGE IC = 5 IB 10 o Ta = 125 C 1 o Ta = 75 C o Ta = 25 C 0.1 o Ta = - 25 C 0.01 0.01 0.1 1 o Ta = 25 C o Ta = - 25 C 1 o Ta = 75 C o Ta = 125 C 0.1 0.01 10 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 5. Collector Output Capacitance Figure 6. Storage Time (Resistive Load) 1000 5.0 f = 1MHz, IE = 0 IC = 5 IB VCC = 125V 4.5 o TSTG [μS], STORAGE TIME COB [pF], OUTPUT CAPACITANCE 10 IC [A], COLLECTOR CURRENT 100 Ta = 25 C 4.0 3.5 3.0 2.5 2.0 1.5 10 1 10 1.0 100 1 VCB [V], COLLECTOR-BASE VOLTAGE 3 4 5 6 7 8 IC [A], COLLECTOR CURRENT © 2012 Fairchild Semiconductor Corporation FJB3307D Rev. A1 2 www.fairchildsemi.com 3 FJB3307D — High Voltage Fast Switching NPN Power Transistor Typical Performance Characteristics Figure 7. Fall Time (Resistive Load) Figure 8. Storage Time (Inductive Load) 400 3.00 IC = 5 IB VCC = 125V 350 IC = 5 IB1 = 2.5 IB2, VCC = 30V, L = 200μH, VBE(OFF) = -5V, 2.75 o o TF [nS], FALL TIME TSTG [μS], STORAGE TIME Ta = 25 C 300 250 200 150 100 50 VCLAMP = 250V, Ta = 25 C 2.50 2.25 2.00 1.75 1.50 1.25 0 1.00 1 2 3 4 5 6 7 8 1 2 3 IC [A], COLLECTOR CURRENT Figure 9. Fall Time (Inductive Load) 5 6 7 8 150 175 Figure 10. Power Derating 100 75.0 IC = 5 IB1 = 2.5 IB2, VCC = 30V, L = 200μH, VBE(OFF) = -5V, 62.5 90 o PD[W], POWER DISSIPATION TF [nS], FALL TIME 4 IC [A], COLLECTOR CURRENT VCLAMP = 250V, Ta = 25 C 50.0 37.5 25.0 12.5 80 70 60 50 40 30 20 10 0 0.0 1 2 3 4 5 6 7 0 8 25 50 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE VCC = 50V, LC = 1mH VBE(off) = -5V, IB2 = -1.5V Ic = 4 Ib 9 8 7 6 5 4 3 2 1 0 200 6 Vcc = 50V VBE(off) = -5V LC = 1mH 5 4 Ic = 5 Ib 3 Ic = 4 Ib Ic = 3.3 Ib 2 1 Ic = 2.2 Ib 0 300 400 500 600 700 800 0 VCE[V], COLLECTOR-EMITTER VOLTAGE 2 4 6 8 10 12 14 16 18 ICE[A], COLLECTOR CURRENT © 2012 Fairchild Semiconductor Corporation FJB3307D Rev. A1 125 Figure 12. RBSOA Saturation 12 10 100 TC[ C], CASE TEMPERATURE Figure 11. Reverse Bias Safe Operating Area 11 75 o IC [A], COLLECTOR CURRENT www.fairchildsemi.com 4 FJB3307D — High Voltage Fast Switching NPN Power Transistor Typical Performance Characteristics (Continued) FJB3307D — High Voltage Fast Switching NPN Power Transistor Typical Performance Characteristics (Continued) Figure 13. Forward Biased Safe Operating Area IC [A], COLLECTOR CURREMT 100 IC(MAX), Pulse 10μs 10 1ms IC(MAX), DC 100μs 1 0.1 o TC = 25 C Single Pulse 0.01 1 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE © 2012 Fairchild Semiconductor Corporation FJB3307D Rev. A1 www.fairchildsemi.com 5 FJB3307D — High Voltage Fast Switching NPN Power Transistor Physical Dimensions D2-PAK Dimensions in Millimeters © 2012 Fairchild Semiconductor Corporation FJB3307D Rev. 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