KSC5402D/KSC5402DT NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • • D-PAK High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices; D-PAK or TO-220 Equivalent Circuit C 1 TO-220 B 1 E 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Value Units VCBO Collector-Base Voltage Parameter 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 12 V IC Collector Current (DC) 2 A ICP *Collector Current (Pulse) 5 A IB Base Current (DC) 1 A IBP *Base Current (Pulse) 2 A PC Power Dissipation(TC=25°C) 30 50 W W TJ Junction Temperature : D-PAK* : TO-220 TSTG Storage Temperature * Pulse Test: Pulse Width=5ms, Duty Cycle<10% 150 °C - 65 to 150 °C Rating Units Thermal Characteristics TA=25°C unless otherwise noted Symbol RθJC Parameter Thermal Resistance RθJA TO-220 D-PAK Junction to Case 2.5 4.17* °C/W Junction to Ambient 62.5 50 °C/W 270 270 °C TL Maximum Lead Temperature for Soldering Purpose ; 1/8” from Case for 5 Seconds * Mounted on 1” square PCB (FR4 ro G-10 Material) © 2009 Fairchild Semiconductor Corporation KSC5402D/KSC5402DT Rev. C0 www.fairchildsemi.com 1 KSC5402D/KSC5402DT — NPN Silicon Transistor, Planar Silicon Transistor December 2009 Symbol Min. Typ. BVCBO Collector-Base Breakdown Voltage Parameter IC=1mA, IE=0 Test Condition 1000 1090 V BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 450 525 V BVEBO Emitter-Base Breakdown Voltage IE=1mA, IC=0 12 14 V ICES Collector Cut-off Current VCES=1000V, IEB=0 TA=25°C TA=125°C 1.2 500 ICEO Collector Cut-off Current VCE=450V, VB=0 TA=25°C 0.3 100 IEBO Emitter Cut-off Current VEB=10V, IC=0 hFE DC Current Gain VCE=1V, IC=0.4A 0.03 TA=125°C VCE=1V, IC=1A VCE(sat) Collector-Emitter Saturation Voltage IC=0.4, IB=0.04A IC=1A, IB=0.2A VBE(sat) Base-Emitter Saturation Voltage IC=0.4A, IB=0.04A IC=1A, IB=0.2A Max. 100 Units μA μA 15 500 μA μA 0.01 100 μA TA=25°C 14 29 TA=125°C 8 17 TA=25°C 6 9 TA=125°C 4 6 TA=25°C 0.25 0.6 V TA=125°C 0.4 1.0 V TA=25°C 0.3 0.75 V TA=125°C 0.65 1.2 V TA=25°C 0.78 1.0 V TA=125°C 0.65 0.9 V TA=25°C 0.85 1.1 V TA=125°C 0.75 1.0 V Cib Input Capacitance VEB=8V, IC=0, f=1MHz 330 500 pF Cob Output Capacitance VCB=10V, IE=0, f=1MHz 35 100 pF fT Current Gain Bandwidth Product IC=0.5A, VCE=10V 11 VF Diode Forward Voltage IF=1A TA=25°C 0.86 1.5 V IF=0.2A TA=25°C 0.75 1.2 V TA=125°C 0.6 IF=0.4A TA=25°C 0.8 1.3 V TA=125°C 0.65 © 2009 Fairchild Semiconductor Corporation KSC5402D/KSC5402DT Rev. C0 MHz V V www.fairchildsemi.com 2 KSC5402D/KSC5402DT — NPN Silicon Transistor, Planar Silicon Transistor Electrical Characteristics TA=25°C unless otherwise noted Symbol tfr VCE(DSAT) Parameter Test Condition Diode Froward Recvery Time (di/dt=10A/μs) IF=0.2A IF=0.4A IF=1A Dynamic Saturation Voltage IC=0.4A, IB1=40mA VCC=300V IC=1A, IB1=200mA VCC=300 Min. Typ. Max. Units 540 520 480 ns ns ns @ 1μs 7.5 V @ 3μs 2.5 V @ 1μs 11.5 V @ 3μs 1.5 V TA=25°C 110 RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=20μs) tON Turn On Time tOFF Turn Off Time IC=1A, IB1=200mA, IB2=150mA, VCC=300V, RL = 300Ω TA=125°C TA=25°C 150 ns 1.25 μs 135 0.95 TA=125°C 1.4 TA=25°C 0.56 ns μs INDUCTIVE LOAD SWITCHING (VCC=15V) tSTG Storage Time tF Fall Time tC Cross-over Time tSTG Storage Time tF Fall Time tC Cross-over Time tSTG Storage Time tF Fall Time tC Cross-over Time IC=0.4A, IB1=40mA, IB2=200mA, Vz=300V, LC=200H IC=0.8A, IB1=160mA, IB2=160mA, Vz=300V, LC=200H IC=1A, IB1=200mA, IB2=500mA, VZ=300V, LC=200μH © 2009 Fairchild Semiconductor Corporation KSC5402D/KSC5402DT Rev. C0 TA=125°C 0.7 TA=25°C 60 TA=125°C 75 TA=25°C 90 TA=125°C 90 TA=25°C TA=125°C 3 TA=25°C 110 TA=125°C 180 TA=25°C 125 TA=125°C 185 TA=25°C 1.1 TA=125°C 1.35 TA=25°C 105 TA=125°C 75 TA=25°C 125 TA=125°C 100 0.65 μs μs 175 ns 175 ns 2.75 μs ns ns μs 175 ns 350 ns 1.2 μs ns ns μs 150 ns 150 ns ns ns www.fairchildsemi.com 3 KSC5402D/KSC5402DT — NPN Silicon Transistor, Planar Silicon Transistor Electrical Characteristics (Continued) TA=25°C unless otherwise noted 3.0 IB = 1A 900mA 800mA 700mA 600mA 500mA 400mA 300mA 2.0 VCE = 1V 200mA 1.5 TJ=125℃ 100 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 2.5 100mA 1.0 TJ=25℃ 10 0.5 IB = 0 0.0 0 1 2 3 4 5 1 1E-3 6 0.01 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 2. DC current Gain VCE = 6V TJ=125℃ hFE, DC CURRENT GAIN TJ=25℃ 10 1 1E-3 0.01 0.1 IC = 5 IB 10 1 TJ=125℃ TJ=25℃ 0.1 1E-3 1 0.01 10 IC = 5 IB 1 TJ=25℃ TJ=125℃ 0.1 1 IC = 10 IB 10 1 TJ=125℃ TJ=25℃ 0.1 1E-3 IC[A], COLLECTOR CURRENT 0.01 0.1 1 IC[A], COLLECTOR CURRENT Figure 5. Base-Emitter Saturation Voltage Figure 6. Collector-Emitter Saturation Voltage © 2009 Fairchild Semiconductor Corporation KSC5402D/KSC5402DT Rev. C0 1 Figure 4. Collector-Emitter Saturation Voltage VBE(sat), VCE(sat)[V], SATURATION VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 3. DC current Gain 0.01 0.1 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT 0.1 1E-3 1 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic 100 0.1 www.fairchildsemi.com 4 KSC5402D/KSC5402DT — NPN Silicon Transistor, Planar Silicon Transistor Typical Performance Characteristics 1000 10 f=1MHz IC = 10 IB Cib 1 CAPACITANCE [pF] VBE(sat), VCE(sat)[V], SATURATION VOLTAGE (Continued) TJ=25℃ TJ=125℃ 100 Cob 10 0.1 1E-3 0.01 0.1 1 1 10 REVERSE VOLTAGE [V] IC[A], COLLECTOR CURRENT Figure 7. Base-Emitter Saturation Voltage Figure 8. Collector Output Capacitance 550 tfr [ns], FORWARD RECOVERY TIME 2.0 TJ=25℃ COLLECTOR VOLTAGE [V] 100 1.5 2.0A 1.5A 1.0 1.0A 0.4A IC=0.2A 0.5 0.0 1E-3 500 450 0.0 0.01 0.1 0.5 1.0 1 IF [A], FORWARD CURRENT IC[A], COLLECTOR CURRENT Figure 9. Typical Collector Saturation Region Figure 10. Forward Recovery Time 10 IC=5IB1=2IB2 VCC=300V PW=40μs 1 ton [ns], TIME VFD [V], VOLTAGE 300 TJ=25℃ TJ=125℃ 200 TJ=125℃ TJ=25℃ 100 0.1 0.01 0.1 0.4 1 0.8 1.0 1.2 1.4 Ic [A], COLLECTOR CURRENT IFD [A], CURRENT Figure 11. Diode Forward Voltage Figure 12. Resistive Switching Time, ton © 2009 Fairchild Semiconductor Corporation KSC5402D/KSC5402DT Rev. C0 0.6 www.fairchildsemi.com 5 KSC5402D/KSC5402DT — NPN Silicon Transistor, Planar Silicon Transistor Typical Performance Characteristics (Continued) 850 IC=5IB1=2IB2 VCC=300V PW=40μs 2.0 IC=10IB1=2IB2 VCC=15V VZ=300V LC=200μH 800 1.5 tsi [ns], TIME toff [μs], TIME 750 TJ=125℃ TJ=25℃ 700 650 TJ=125℃ 600 TJ=25℃ 1.0 550 0.4 0.6 0.8 1.0 1.2 0.4 1.4 0.6 1.0 1.2 1.4 Ic [A], COLLECTOR CURRENT Ic [A], COLLECTOR CURRENT Figure 13. Resistive Switching Time, toff Figure 14. Inductive Switching Time, tsi 130 100 120 IC=10IB1=2IB2 VCC=15V VZ=300V LC=200μH 90 TJ=25℃ 70 IC=10IB1=2IB2 VCC=15V VZ=300V LC=200μH 110 80 tC [ns], TIME tfi [ns], TIME 0.8 TJ=125℃ 100 TJ=125℃ TJ=25℃ 90 80 60 70 50 0.4 0.6 0.8 1.0 1.2 60 0.4 1.4 0.6 Ic [A], COLLECTOR CURRENT Figure 15. Inductive Switching Time, tfi 1.2 1.4 IC=5IB1=5IB2 VCC=15V 400 V =300V Z LC=200μH 30 TJ=125℃ 350 tfi [ns], TIME tsi [μs], TIME 1.0 Figure 16. Inductive Switching Time, tc 450 25 TJ=25℃ IC=5IB1=5IB2 VCC=15V VZ=300V LC=200μH 20 0.4 0.8 Ic [A], COLLECTOR CURRENT 0.6 0.8 250 200 150 TJ=25℃ 100 1.0 1.2 50 0.4 1.4 0.6 0.8 1.0 1.2 1.4 Ic [A], COLLECTOR CURRENT Ic [A], COLLECTOR CURRENT Figure 17. Inductive Switching Time, tsi Figure 18. Inductive Switching Time, tfi © 2009 Fairchild Semiconductor Corporation KSC5402D/KSC5402DT Rev. C0 TJ=125℃ 300 www.fairchildsemi.com 6 KSC5402D/KSC5402DT — NPN Silicon Transistor, Planar Silicon Transistor Typical Performance Characteristics (Continued) 450 1.6 IC=5IB1=5IB2 VCC=15V 400 VZ=300V LC=200μH 1.4 TJ=125℃ TJ=125℃ 300 tsi [μs], TIME tC [ns], TIME 350 250 200 TJ=25℃ TJ=25℃ 1.0 0.8 150 IC=5IB1=2IB2 VCC=15V V =300V 0.6 L Z=200μH C 100 50 0.4 1.2 0.6 0.8 1.0 1.2 1.4 0.4 0.6 Ic [A], COLLECTOR CURRENT 0.8 1.0 1.2 1.4 Ic [A], COLLECTOR CURRENT Figure 19. Inductive Switching Time, tc Figure 20. Inductive Switching Time, tsi 200 IC=5IB1=2IB2 VCC=15V VZ=300V LC=200μH 160 IC=5IB1=2IB2 VCC=15V VZ=300V LC=200μH 180 140 tC [ns], TIME tfi [ns], TIME 160 TJ=25℃ 120 100 120 TJ=25℃ 100 TJ=125℃ 80 TJ=125℃ 140 80 60 60 40 0.4 0.6 0.8 1.0 1.2 1.4 0.4 0.6 Figure 21. Inductive Switching Time, tfi 1.2 1.4 Figure 22. Inductive Switching Time, tc 40 10 10μs 1μs PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT 1.0 Ic [A], COLLECTOR CURRENT Ic [A], COLLECTOR CURRENT 50μs 1 0.8 5ms 1ms DC 0.1 30 20 10 0 0.01 10 100 0 1000 50 75 100 125 150 TC[℃], CASE TEMPERATURE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 23. Forward Bias Safe Operating Area Figure 24. Power Derating © 2009 Fairchild Semiconductor Corporation KSC5402D/KSC5402DT Rev. C0 25 www.fairchildsemi.com 7 KSC5402D/KSC5402DT — NPN Silicon Transistor, Planar Silicon Transistor Typical Performance Characteristics KSC5402D/KSC5402DT — NPN Silicon Transistor, Planar Silicon Transistor Physical Dimension TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters © 2009 Fairchild Semiconductor Corporation KSC5402D/KSC5402DT Rev. C0 www.fairchildsemi.com 8 KSC5402D/KSC5402DT — NPN Silicon Transistor, Planar Silicon Transistor Physical Dimension (Continued) D-PAK Dimensions in Millimeters © 2009 Fairchild Semiconductor Corporation KSC5402D/KSC5402DT Rev. C0 www.fairchildsemi.com 9 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower¥ Auto-SPM¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™* ™* ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ ® FACT FAST® FastvCore¥ FETBench¥ FlashWriter®* FPS¥ F-PFS¥ FRFET® SM Global Power Resource Green FPS¥ Green FPS¥ e-Series¥ Gmax™ GTO¥ IntelliMAX¥ ISOPLANAR¥ MegaBuck™ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® ® OPTOPLANAR ® PDP SPM™ Power-SPM¥ PowerTrench® PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥ ™ Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START¥ SPM® STEALTH™ SuperFET¥ SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS™ SyncFET™ Sync-Lock™ ® * The Power Franchise® TinyBoost¥ TinyBuck¥ TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TriFault Detect¥ TRUECURRENT¥* PSerDes¥ ® UHC Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com