FJP5027 FJP5027 High Voltage and High Reliability • High Speed Switching • Wide SOA TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 1100 Units V 800 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 3 A A ICP Collector Current (Pulse) 10 IB Base Current 1.5 A PC Collector Dissipation ( TC=25°C) 50 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = 1mA, IE = 0 BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 800 BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V VCEX(sus) Collector-Emitter Sustaining Voltage IC = 1.5A, IB1 = -IB2 = 0.3A L = 2mH, Clamped 800 V ICBO Collector Cut-off Current VCB = 800V, IE = 0 10 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 µA hFE1 hFE2 DC Current Gain VCE = 5V, IC = 0.2A VCE = 5V, IC = 1A VCE(sat) Collector-Emitter Saturation Voltage IC = 1.5A, IB = 0.3A 2 V VBE(sat) Base-Emitter Saturation Voltage IC = 1.5A, IB = 0.3A 1.5 V Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz 60 pF fT Current Gain Bandwidth Product VCE = 10V, IC = 0.2A 15 MHz VCC = 400V IC = 5IB1 = -2.5IB2 = 2A RL = 200Ω tON Turn On Time tSTG Storage Time tF Fall Time Min. 1100 Typ. Max. Units V V 10 8 40 0.5 µs 3 µs 0.3 µs hFE Classification Classification N R O hFE1 10 ~ 20 15 ~ 30 20 ~ 40 ©2003 Fairchild Semiconductor Corporation Rev. A, December 2003 FJP5027 Typical Characteristics 3.0 100 VCE = 5 V IB = 350mA 2.5 IC [A], COLLECTOR CURRENT o o hFE, DC CURRENT GAIN TC = 125 C 2.0 IB = 150mA 1.5 IB = 100mA 1.0 IB = 50mA TC = 75 C o TC = - 25 C o TC = 25 C 10 0.5 0.0 0 1 2 3 4 5 6 7 1 0.01 8 0.1 Figure 1. Static Characteristic 10 Figure 2. DC current Gain 100 10 IC = 5 IB VBE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE 1 IC [A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE o TC = 125 C 10 o TC = 75 C o TC = 25 C 1 o TC = - 25 C 0.1 0.01 0.1 1 IC = 5 IB o TC = 25 C 1 o TC = - 25 C o o TC = 125 C TC = 75 C 0.1 0.1 10 IC [A], COLLECTOR CURRENT 1 10 IC [A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage IC[A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT 100 10 IB1=3A, RB2=0 L=1mH, VCC=20V 1 10 100 1000 ICMAX.(Pulse) 10 ICMAX(Continuous) 10ms 1ms 100µs DC 1 0.1 0.01 1E-3 1 10 100 1000 10000 VCE [V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Switching Time ©2003 Fairchild Semiconductor Corporation Figure 6. Safe Operating Area Rev. A, December 2003 FJP5027 Typical Characteristics (Continued) 80 10 PC[W], POWER DISSIPATION tF, tSTG [µ s], SWITCHING TIME 70 1 0.1 IB1=45mA, IB2=-0.5A VCC=125V 60 50 40 30 20 10 0 0.01 0.1 1 10 IC [A], COLLECTOR CURRENT Figure 7. Resistive Load Switching Characteristics ©2003 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. A, December 2003 FJP5027 Package Dimensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev. A, December 2003 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST® FASTr™ Bottomless™ FRFET™ CoolFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ EnSigna™ ImpliedDisconnect™ FACT™ ISOPLANAR™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2003 Fairchild Semiconductor Corporation Rev. I6