XI’AN IR-PERI Company .2#6)7 PRELIMINARY ]HALF-BRODGE ^ HEXFET Power MOSFET A - A - PAK Features ! Advanced Process Technology Ultra Low On-Resistance # Dynamic dv/dt Rating 175 C Operating Temperature o Fast Switching VDSS=100V " RDS(on) =0.009Ω $ ID=170A % Fully Avalanche Rated Benefits • • • Increased operating efficiency Direct mounting to heatsink Performance optimized for power conversion: UPS, SMPS, Welding,Mortor Control Lower EMI, requries less snubbing • Absolute Maximum Ratings ID @ Tc=25oC ID @ Tc=100oC IDM PD @ Tc=25oC V GS EAS IAR EAR dv/dt TJ TSTG Parameter Termal / Mechanical Characteristics RθJC RθJC RθCS Parameter Termal Resistance, Junction-to- Case- IBGT Termal Resistance, Junction-to- Case- Diode Termal Resistance, Csar-to- Sink- Module Mouting Torque, Case-to-Heatsink Mouting Torque, Case-to-Terminal 1,2 & 3 Weight of Module 1 Max. Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate- to- Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Temperature Range Storage Temperature Range Units 170 120 670 580 3.8 ±30 1350 100 58 2.3 -55 to +175 -55 to +175 Typ. 0.1 - 100 A W W/oC V mJ A mJ V/ns C o Max. 0.26 0.36 4.0 3.0 - Units C/W o N.m g XI’AN IR-PERI C ompany .2#6)7 Electrical Characteristics @ TJ=25oC(unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Drain-to-Source Breakdown Voltage 100 V VGS=0V, ID=250µA DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient 0.11 V/oC Reference to 25oC, ID=250µA RDS(on) Static Drain-to-Source On-Resistance 0.009 Ω VGS=10V, ID=100A V(BR)DSS VGS(th Gate Threshold Voltage 3.0 5.0 V VDS=10V, ID=250µA gfe Forward Transconductance 52 S VDS=50V, ID=100A IDSS Drain-to-Source Leakage Current 25 µA VDS=100V,VGS=0V 250 100 IGSS Drain-to-Source Forward Current VDS=80V,VGS=0V,TJ=125oC nA VGS=30V Drain-to-Source Reverse Current -100 VGS=-30V Qg Total Gate Charge 260 390 ID=100A Qgs Gate-to-Source Charge 49 74 Qgd nC VDS=80V Gate-to-Drain (Miller) Charge 160 250 VGS=10V td(on Turn - On Delay Time 24 VDD = 50V tr Rise Time 270 td(off Turn - Off Delay Time 45 RG =1.03Ω tf Fall Time 140 VGS= 10V LD Intemal Drain Inductance 5.0 nS nH ID = 100A Between lead,6mm from LS Intemal Source Inductance 13 package and center of die Ciss Input Capacitance 6790 VGS = 0V Coss Output Capacitance 2470 VDS = 25V Crss Reverse Transfer Capacitance 990 Coss Output Capacitance 10740 VGS=0V,VDS=1.0V,f=1.0MHZ Coss Output Capacitance 1180 VGS=0V,VDS=80V,f=1.0MHZ Coss eff. Effective Output Capacitance 2210 VGS=0V,VDS=0V to 80V pF f =1.0MHZ Dynamic Characteristics - TJ=125oC (unless otherwise specified) Parameter IS Continuous Source Current ISM Pulsed Source Current Min. Typ. Max. 174 670 (Body Diode) Units Conditions MOSFET symbol A showing the integral reverse (Body Diode) p-n junction diode VSD Diode Forward Voltage 1.3 V TJ=25oC,IS=100A,VGS=0V trr Diode Reverse Recovery Time 220 330 nS TJ=25oC,IF=100A Qrr Diode Reverse Recovery Charge 1640 2460 nC di/dt=100A/µs ton Forward Turn-On Time 2 Intrinsic turn-on time is negligible (turn-on is dominated by Ls+Ld)