IRF IRGBC20SD2

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PD-9.1544
IRGBC20SD2
PROVISIONAL
Standard Speed CoPack
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
VCES = 600V
• Switching-loss rating includes all 'tail' losses
• HEXFREDTM soft ultrafast diodes
• Optimized for line frequency operation (to 400HZ)
VCE(SAT) ≤ 2.4V
G
@VGE = 15V, IC = 10A
E
Description
Co-packaged IGBTs are a natural extension of
International Rectifier's well-known IGBT line. They
provide the convenience of an IBGT and an ultrafast
recovery diode in one package, resulting in
substantial benefits to a host of high-voltage, highcurrent, motor control, UPS and power supply
applications.
n - ch a n n e l
TO-220AB
Absolute Maximum Ratings
Parameter
VCES
I C @ TC = 25°C
I C @ TC = 100°C
I CM
I LM
I F @ TC = 100°C
I FM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
Units
600
19
10
76
38
7.0
32
± 20
60
24
-55 to +150
V
A
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
To Order
Min.
Typ.
Max.
-------------------------
----------0.50
----2 (0.07)
2.1
3.5
-----80
------
Units
°C/W
g (oz)
Revision 0:9/04/96
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IRGBC20SD2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
600
∆V(BR)CES /∆TJ
------VCE(on)
------Gate Threshold Voltage
3.0
VGE(th)
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---Forward Transconductance „
2.0
gfe
Zero Gate Voltage Collector Current
---ICES
---Diode Forward Voltage Drop
---VFM
---Gate-to-Emitter Leakage Current
---IGES
V(BR)CES
Parameter
Collector-to-Emitter Breakdown Voltageƒ
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Typ.
---0.75
1.8
2.4
1.9
----11
5.8
------1.4
1.3
----
Max. Units
Conditions
---V
VGE = 0V, IC = 250µA
---- V/°C VGE = 0V, IC = 1.0mA
2.4
IC = 10A
VGE = 15V
---V
IC = 19A
---IC = 10A, TJ = 150°C
5.5
VCE = VGE , IC = 250µA
---- mV/°C VCE = VGE , IC = 250µA
---S
VCE = 100V, IC = 10A
250
µA
VGE = 0V, VCE = 600V
1700
VGE = 0V, VCE = 600V, T J = 150°C
1.7
V
IC = 8.0A
1.6
IC = 8.0A, TJ = 150°C
±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
t d(on)
tr
t d(off)
tf
Eon
Eoff
Ets
t d(on)
tr
t d(off)
tf
Ets
LE
Cies
Coes
Cres
t rr
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
Min.
----------------------------------------------------------------------------------
Typ.
1.6
2.3
7.0
72
69
820
910
0.70
3.9
4.6
78
90
1100
1800
7.0
7.5
360
36
5.2
37
55
3.5
4.5
65
124
240
210
Max. Units
Conditions
2.6
IC = 10A
4.0
nC
VCC = 400V
12
---TJ = 25°C
---ns
IC = 10A, VCC = 480V
---VGE = 15V, RG = 5.0Ω
---Energy losses include "tail" and
---diode reverse recovery.
---mJ
------TJ = 150°C,
---ns
---VGE = 15V, RG = 50Ω
---Energy losses include "tail" and
---mJ diode reverse recovery.
---nH Measured 5mm from package
---VGE = 0V
---pF
VCC = 30V
---ƒ = 1.0MHz
55
ns
TJ = 25°C
IF = 8.0A
90
TJ = 125°C
5.0
A
TJ = 25°C
VR = 200V
8.0
TJ = 125°C
138
nC
TJ = 25°C
360
TJ = 125°C
di/dt 200A/µs
---- A/µs TJ = 25°C
---TJ = 125°C
To Order
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IRGBC20SD2
80
F or b ot h:
60
Load Current (A)
T ria n g ula r w a v e :
D u t y c y c le : 5 0 %
TJ = 1 2 5 ° C
T sink = 9 0° C
G a t e d riv e a s s p e c ifie d
P o w e r D is s ipa t io n = 4 0W
C la m p v o lta g e:
8 0 % o f ra te d
S q u a re w a v e :
6 0 % o f ra te d
v olt ag e
40
20
Id ea l diod es
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
100
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
1000
TJ = 25°C
T J = 150°C
10
V G E = 15V
20µs PULSE WIDTH
1
0.1
1
A
10
100
TJ = 150°C
T J = 25°C
10
V C C = 10V
5µs PULSE WIDTH
1
4
6
8
10
VG E , Gate-to-Emitter Voltage (V)
V C E , Collector-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
To Order
A
12
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IRGBC20SD2
2.5
V G E = 15V
V C E , Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A)
40
30
20
10
A
0
25
50
75
100
125
V G E = 15V
80µs PULSE WIDTH
I C = 40A
2.0
I C = 20A
1.5
I C = 10A
A
1.0
-60
150
T C , Case Temperature (°C)
-40
-20
0
20
40
60
80
100 120 140 160
T J , Junction Temperature (°C)
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
1
D = 0.50
0.20
0 .1
0.10
PD M
0.05
0.02
t
S ING LE PULS E
(T HERMA L RE SPO NS E)
t2
N otes :
1 . D uty fac tor D = t
0.01
0.01
0.0000 1
1
1
/ t
2
2 . P ea k TJ = P D M x Z thJ C + T C
0.0001
0.001
0.0 1
0.1
1
t 1 , R e ct an gu la r P ulse D ura tion (s ec )
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
To Order
10
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IRGBC20SD2
20
V G E = 0 V,
f = 1M H z
C ie s = C ge + C gc , C c e SH O RTE D
C r es = C gc
C o es = C c e + C gc
V G E , G a te-to -E m itter V oltage (V )
C , C apac itan ce ( pF )
4000
16
C ie s
3000
V CE = 40 0V
I C = 20A
12
2000
C oe s
C re s
1000
1
10
4
A
0
A
0
8
0
100
20
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
10
= 480V
= 15V
= 25°C
= 20A
1.6
1.4
1.2
A
1.0
0
10
20
30
40
50
80
100
120
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
VC C
VGE
TC
IC
60
Q g , T otal G at e C ha rge (nC )
V C E , C ollecto r-to-E m itte r V olta ge (V )
1.8
40
R G = 10 Ω
V G E = 15V
V C C = 480V
I C = 40A
I C = 20A
1
I C = 10A
0.1
60
R G , Gate Resistance ( Ω)
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
TJ , Junction Temperature (°C)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
To Order
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IRGBC20SD2
RG
TC
V CC
V GE
4.0
1000
= 10 Ω
= 150°C
= 480V
= 15V
VGGE E= 20V
T J = 1 25°C
100
3.0
S AFE O P ER ATIN G AR EA
2.0
10
1.0
A
0.0
0
10
20
30
40
1
1
50
10
100
V C E , C olle cto r-to-E m itte r V o lta g e (V )
I C , Collector-to-Emitter Current (A)
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
Inst antan eous F orw ard C urrent - I F (A )
Total Switching Losses (mJ)
5.0
10
TJ = 15 0°C
TJ = 12 5°C
TJ = 2 5°C
1
0.8
1.2
1.6
2.0
2.4
F orwa rd V olta ge D rop - V FM (V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
To Order
1000
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IRGBC20SD2
100
100
VR = 2 0 0 V
T J = 1 2 5 °C
TJ = 2 5 ° C
V R= 200V
T J = 125°C
T J = 25°C
80
I IR R M - (A )
t rr - (ns)
I F = 30A
I F = 30A
60
I F = 15A
IF = 15 A
10
I F = 5 .0A
40
I F = 5.0A
20
100
di f /dt - (A/µs)
1
100
1000
1000
di f /dt - (A / µs)
Fig. 14 - Typical Reverse Recovery vs. dif/dt
Fig. 15 - Typical Recovery Current vs. dif/dt
1000
800
VR = 2 0 0 V
T J = 1 2 5 °C
TJ = 2 5 ° C
VR = 2 0 0 V
T J = 1 2 5 °C
TJ = 2 5 ° C
di(re c)M /dt - (A / µs)
600
Q R R - (nC )
I F = 3 0A
400
I F = 15A
IF = 5.0A
I F = 5 .0 A
I F = 1 5A
I F = 3 0A
200
0
100
di f /d t - (A /µs )
1000
100
100
1000
d i f /dt - (A /µs)
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M /dt vs. dif/dt
To Order
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IRGBC20SD2
90% Vge
+ Vg e
Same t ype
device as
D.U.T.
V ce
Ic
90% Ic
10 % Vc e
Ic
5% Ic
430µF
80%
of Vce
D.U.T.
td (off)
tf
t1 +5µ S
V ce ic d t
t1
E off =
Fig. 18a - Test Circuit for Measurement of
ILM, Eon , Eoff(diode), t rr, Qrr, Irr, t d(on), t r, t d(off), t f
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
G ATE VO LTA G E D .U .T.
1 0% +V g
Q rr =
Ic
trr
id dt
tx
+V g
tx
10% V cc
10 % Ir r
V cc
DUT V O LTA G E
AN D C URR E NT
V ce
Vcc
V pk
Irr
10% Ic
9 0% Ic
td( on)
tr
Ipk
Ic
DIO DE RE CO V E RY
W AV E FO RM S
5% Vc e
t1
t2
E on = V c e ie dt
t1
Er ec =
DIO D E RE V E RS E
RE C O V ER Y EN ER G Y
t2
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
t4
V d id d t
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Eon , td(on), tr
To Order
Defining Erec, trr, Q rr, Irr
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IRGBC20SD2
V g G ATE S IG N AL
DE VICE UNDE R TE S T
CURR EN T D .U .T.
VO L TA G E IN D.U.T.
CURR EN T IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
D.U.T.
L
10 00V
V c*
RL =
480V
4 X I C @25°C
0 - 480V
50V
60 00µ F
100 V
Figure 19. Clamped Inductive Load Test
Circuit
To Order
Figure 20. Pulsed Collector Current
Test Circuit
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IRGBC20SD2
Notes:
 Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature
‚ VCC=80%(V CES), VGE =20V, L=10µH, RG= 50Ω
ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
„ Pulse width 5.0µs, single shot.
Case Outline — TO-247AC
3.65 (.143)
3.55 (.140)
0.25 (.010) M
15.90 (.626)
15.30 (.602)
- B-
-D -
D B M
-A 5.50 (.217)
20.30 (.800)
19.70 (.775)
2X
1
2
5.30 (.209)
4.70 (.185)
2.50 (.089)
1.50 (.059)
4
5.50 (.217)
4.50 (.177)
LEAD ASSIGN MENT S
1 - GATE
2 - C OLLEC TOR
3 - EMITT ER
4 - C OLLEC TOR
3
-C-
*
14.80 (.583)
14.20 (.559)
2.40 (.094)
2.00 (.079)
2X
5.45 (.215)
2X
4.30 (.170)
3.70 (.145)
3X
1.40 (.056)
1.00 (.039)
0.25 (.010) M
NOTES:
1 D IMENSIONS & TOLERANCIN G
PER ANSI Y14.5M, 1982.
2 C ONTR OLLIN G D IM ENSION : INCH .
3 D IMENSIONS AR E SHOW N
M ILLIM ETERS (INCH ES).
4 C ONFORM S T O JED EC OU TLIN E
T O-247AC .
*
LONGER LEAD ED (20m m)
VER SION AVAILABLE (TO-247AD)
TO OR DER ADD "-E" SUF FIX
TO PART NUM BER
0.80 (.031)
0.40 (.016)
2.60 (.102)
2.20 (.087)
3X
C A S
3.40 (.133)
3.00 (.118)
C O NFO RM S TO J ED EC O UTLINE TO -247 AC (TO -3P )
D im en sion s in M illim ete rs a nd (Inc he s)
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Data and specifications subject to change without notice.
9/96
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