TM Motion-SPM FPAM50LH60 Smart Power Module for 2-phase Interleaved PFC Features Applications • Single phase rectifier for AC input System air conditioner • 2-phase interleaved PFC General Description • Control IC for gate driving and protection FPAM50LH60 is an advanced smart power module of 2-phase interleaved PFC(Power Factor Correction). It combines optimized drive circuit with low-loss IGBTs and using DBC which has low thermal resistance. System reliability is further enhanced by the integrated under-voltage lock-out, over-current protection, and built-in NTC thermistor for monitoring overtemperature. • Built-in NTC thermistor for monitoring over-temperature • Low thermal resistance due to DBC substrate • Isolation lating of 2500Vrms /min • UL Certified No.E209024 Figure 1. ©2012 Fairchild Semiconductor Corporation FPAM50LH60 Rev. C 1 www.fairchildsemi.com FPAM50LH60 Smart Power Module for 2-phase Interleaved PFC January 2012 • For IGBTs : Gate drive circuit, Over Current protection(SC), Control supply circuit under-voltage(UV) protection • Fault signal : Corresponding to SC and UV fault • Built-in thermistor: Over-temperature monitoring • Input interface : 3.3/5V CMOS/LSTTL compatible Pin Configuration Top View (1)CSC (2)COM (3)VFO (4)INX (5)INY (6)COM (7)n.c. (8)VCC (9)VCC (10)COM (24)P (25)P (26)PY (27)n.c. (28)PX (11)RTH (12)VTH (29)X (13)NR (14)NR (30)Y (15)n.c. (16)n.c. (17)n.c. (31)NP Case temperature(TC) detecting point (18)R (19)R (20)n.c. (21)n.c. (32)PR (22)S (23)S Dimension unit: millimeter Figure 2. 2 FPAM50LH60 Rev. C www.fairchildsemi.com FPAM50LH60 Smart Power Module for 2-phase Interleaved PFC Integrated Drive, Protection and System Control Functions FPAM50LH60 Smart Power Module for 2-phase Interleaved PFC Pin Descriptions Pin Number Pin Name Pin Description 1 CSC Signal input for over current detection 2,6,10 COM Common supply ground 3 VFO Fault out 4 INX PWM input for X IGBT drive 5 INY PWM input for Y IGBT drive 7 n.c. 8,9 VCC Common supply voltage of IC for IGBT drive 11 RTH Thermister 12 V TH Thermister 13,14 NR Negative DC-link of Rectifier Diode 15,16,17 n.c. 18,19 R 20,21 n.c. AC input for R phase 22,23 S AC input for S phase 24,25 P Output of Diode 26 PY Input of Diode 27 n.c. 28 PX Input of Diode 29 X Output of X phase IGBT 30 Y Output of Y phase IGBT 31 NP Negative DC-link of IGBT 32 PR Positive DC-link of Rectifier Diode Internal Equivalent Circuit (11)RTH (24)(25)P THERMISTOR (12)VTH (1)CSC (3)VFO (4)INX (5)INY (8)(9)VCC (2)(6)(10) COM (26)PY (28)PX CSC (29)X VFO (30)Y INX INY OUT X (32)PR VCC (18)(19)R OUT Y (22)(23)S COM (31)NP (13)(14)NR Figure 3. Internal Block Diagram 3 FPAM50LH60 Rev. C www.fairchildsemi.com Converter Part Symbol Vi VPN VPN(Surge) Parameter Conditions Rating Units Input Supply Voltage Applied between R-S 264 Vrms Output Voltage Applied between X-NP,Y-NP, P-P X, P-PY 450 V Output Supply Voltage (Surge) Applied between X-NP,Y-NP, P-P X, P-PY 500 V VCES Collector-emitter Voltage Breakdown Voltage between X-N P,Y-N P 600 V VRRM Repetitive Peak Reverse Voltage of FRD Breakdown Voltage between P-P X, P-PY 600 V VRRMR Repetitive Peak Reverse Voltage of Rec- Breakdown Voltage between P R-R, PR-S, tifier R-NR, S-NR 900 V FRD Forward Current TC = 25°C, TJ < 125°C 50 A Peak Surge Current of FRD Non-repetitive, 60Hz single half-sine wave 500 A Rectified Forward Current TC = 25°C, TJ < 125°C 50 A *IF *IFSM *IFR *IFSMR Peak Surge Current of Rectifier Non-repetitive, 60Hz single half-sine wave 500 A ± *IC Each IGBT Collector Current TC = 25°C, TJ < 125°C 50 A ± *ICP Each IGBT Collector Current(Peak) TC = 25°C, TJ < 125°C, Under 1ms pulse width 100 A Collector Dissipation TC =25°C per single IGBT Operating Junction Temperature (Note 1) *P C TJ 135 W -40~125 °C Note: 1. The maximum junction temperature rating of the power chips integrated within the SPM is 125°C. 2. Marking “ * “ is calculation value or design factor. Control Part Symbol Parameter Conditions Rating Units VCC Control Supply Voltage Applied between V CC - COM 20 V VIN Input Signal Voltage Applied between IN X, INY - COM -0.3 ~ VCC+0.3 V VFO Fault Output Supply Voltage Applied between V FO - COM -0.3 ~ VCC+0.3 V IFO Fault Output Current Sink Current at V FO Pin 1 mA VSC Current Sensing Input Voltage Applied between CSC - COM -0.3 ~ VCC+0.3 V Total System Symbol Parameter TSTG Storage Temperature V ISO Isolation Voltage Conditions Rating 60Hz, Sinusoidal, AC 1 minute, Connection Pins to heat sink plate Units -40 ~ 125 °C 2500 Vrms Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Parameter Junction to Case Thermal Resistance Rth(j-c)R Condition Typ. Max. Units Each IGBT under Operating Condition - - 0.74 °C/W Each Diode under Operating Condition - - 1.13 °C/W Each Rectifier under Operating Condition - - 0.74 °C/W 4 FPAM50LH60 Rev. C Min. www.fairchildsemi.com FPAM50LH60 Smart Power Module for 2-phase Interleaved PFC Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified) Converter Part Symbol Parameter V CE(SAT) Conditions Min. Typ. Max. Units IGBT Saturation Voltage V CC = 15V, VIN = 5V, IC = 50A - 1.7 2.2 V V FF FRD Forward Voltage IF = 50A - 1.9 2.4 V VFR Rectifier Forward Voltage IFR = 50A - 1.13 1.35 V IRR Switching Characteristic V PN = 400V, VCC = 15V, IC = 25A, V IN = 0V « 5V, Inductive Load (Note 3), per single IGBT - 27 - A - 45 - ns tON tRR - 772 - ns tOFF - 1117 - ns tC(ON) - 110 - ns - 125 - ns - - 250 mA tC(OFF) ICES Collector-Emitter Leakage Current V CES =600V Note: 3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. Control Part Symbol Parameter Conditions Min. Typ. Max. Units IQCC Quiescent VCC Supply Current VCC = 15V, INX, INY - COM = 0V, Supply current between V CC and COM - - 2.65 mA IPCC Operating V CC Supply Current VCC = 15V, fPWM = 20kHz, duty=50%, applied to one PWM signal input per single IGBT, Supply current between VCC and COM - - 7.0 mA V FOH Fault Output Voltage VSC = 0V, V FO Circuit: 10kW to 5V Pull-up 4.5 - - V - - 0.5 V VSC(Ref) VFOL Over-Current Protection Trip VCC = 15V Level Voltage of CSC pin 0.45 0.5 0.55 V UVCCD Supply Circuit UnderVoltage Protection Detection Level 10.5 - 13.0 V Reset Level 11.0 - 13.5 V 30 - - ms UVCCR VSC = 1V, V FO Circuit: 10kW to 5V Pull-up tFOD Fault-out Pulse Width V IN(ON) ON Threshold Voltage Applied between INX, INY - COM 2.6 - - V VIN(OFF) OFF Threshold Voltage Applied between INX, INY - COM - - 0.8 V Resistance of Thermistor @ TTH = 25°C (Figure 5)(Note 4) - 47 - kW @ TTH = 100°C (Figure 5)(Note 4) - 2.9 - kW RTH Note: 4. TTH is the temperature of thermister itself. To know case temperature ( TC), please make the experiment considering your application. 5 FPAM50LH60 Rev. C www.fairchildsemi.com FPAM50LH60 Smart Power Module for 2-phase Interleaved PFC Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) FPAM50LH60 Smart Power Module for 2-phase Interleaved PFC . 100% IC tRR 100% IC IRR VCE IC 90% IC 10% IC 10% V CE 10% V CE 10% IC V IN tON tOFF tC(OFF) tC(ON) (a) turn-on (b) turn-off Figure 4. Switching Time Definition R-T Curve 200 4 Resistance RTH[k] Resistance RTH[k] 150 100 3 2 1 95 100 105 110 115 120 125 Temperature TTH[degC] 50 0 0 25 50 75 100 125 Temperature TTH[degC] Figure 5. R-T Curve of The Built-in Thermistor 6 FPAM50LH60 Rev. C www.fairchildsemi.com Symbol Parameter Value Conditions Vi Input Supply Voltage Applied between R - S Ii Input Current TC <90°C, Vi=220V, VO=360V, fPWM=20kHz per each IGBT V PN Supply Voltage Applied between X-NP, Y-NP, P-PX, P-PY VCC Control Supply Voltage Applied between V CC - COM dVCC/dt IFO fPWM Supply Variation Units Min. Typ. Max. 187 - 253 Vrms - - 35 Arms - - 400 V 13.5 15 16.5 V -1 - 1 V/ms Fault Output Current Sink Current at V FO Pin - - 1 mA PWM Input Frequency -40°C<TJ <125°C per single IGBT - 20 - kHz Mechanical Characteristics and Ratings Parameter Limits Conditions Mounting Torque Mounting Screw: M4 Device Flatness Refer to Figure 6 Units Min. Typ. Max. Recommended 0.98N•m 0.78 0.98 1.17 N•m Recommended 10kg•cm 8 10 12 kg•cm 0 - +150 mm - 32 - g Weight Figure 6. Flatness Measurement Position Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FPAM50LH60 FPAM50LH60 SPM32-EA - - 8 7 FPAM50LH60 Rev. C www.fairchildsemi.com FPAM50LH60 Smart Power Module for 2-phase Interleaved PFC Recommended Operating Conditions (TJ = 25°C, Unless Otherwise Specified) Input Signal Protection Circuit State RESET SET RESET UVCCR a1 Control Supply Voltage UVCCD a6 a3 a2 a7 a4 Output Current a5 Fault Output Signal a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when the next input is applied. a2 : Normal operation: IGBT ON and carrying current. a3 : Under voltage detection (UVCCD). a4 : IGBT OFF in spite of control input condition. a5 : Fault output operation starts. a6 : Under voltage reset (UVCCR ). a7 : Normal operation: IGBT ON and carrying current. Figure 7. Under-Voltage Protection Input Voltage (VIN) c6 c7 (with the external over current detection circuit) c1 : Normal operation: IGBT ON and carrying current. Internal IGBT Gate-Emitter Voltage c3 c4 c2 : Over current detection (OC trigger). c3 : Hard IGBT gate interrupt. c2 c4 : IGBT turns OFF. OC c5 : Fault output timer operation starts. c6 : Input “L” : IGBT OFF state. c7 : Input “H”: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON. c1 c8 Output Current Input signal to CSC pin for Protection Fault Output Signal c8 : IGBT OFF state SET RESET c5 Figure 8. Over Current Protection 8 FPAM50LH60 Rev. C www.fairchildsemi.com FPAM50LH60 Smart Power Module for 2-phase Interleaved PFC Time Charts of Protective Function Current sensing RT current protection R TH P THERMISTOR V TH +5V RSCF Controller RFO CSCF PX PY CSC X VFO CF RF CF RF Y L INX OUT X PR INY +15V VCC L R OUT Y VDC VAC S COM DY NP DX NR Note: 1. To avoid malfunction, the wiring of each input should be as short as possible. (less than 2~3cm) 2. VFO output is open drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 1mA. 3. Input signal is High-Active type. There is a 5kΩ resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommanded for the prevention of input signal oscillation. RF CF constant should be selected in the range 50~150ns. (Recommended RF=100 Ω , CF=1nF) 4. To prevent error of the protection function, the wiring related with RSCF and CSCF should be as short as possible. 5. In the over current protection circuit, please select the RSCF , CSCF time constant in the range 1.5~2 μs. 6. Each capacitors should be mounted as close to the SPM pins as possible. 7. Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays. 8. Internal NTC thermistor can be used for monitoring of the case temperature and protecting the device from the overheating operation. Select an appropriate resistor RT according to the application. 9. It is recommended that anti-parallel diode(DX ,DY) be connected with each IGBT. Figure 9. Typical Application Circuit 9 FPAM50LH60 Rev. C www.fairchildsemi.com FPAM50LH60 Smart Power Module for 2-phase Interleaved PFC +5V Input signal for over FPAM50LH60 Smart Power Module for 2-phase Interleaved PFC Detailed Package Outline Drawings Dimension unit: millimeter 10 FPAM50LH60 Rev. 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