QFET TM FQB3N60C 600V N-Channel MOSFET Features Description • 3A, 600V, RDS(on) = 3.4Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. • Low gate charge ( typical 10.5 nC) • Low Crss ( typical 5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability D D G S G D2-PAK FQB Series S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR dv/dt PD Power Dissipation FQB3N60C Unit 600 V 3 1.8 A A 12 A ±30 V (Note 2) 150 mJ (Note 1) 3 A Repetitive Avalanche Energy (Note 1) 7.5 mJ Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns 75 0.62 W W/°C -55 to +150 °C 300 °C (Note 1) (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter Typ. Max. Unit RθJC Thermal Resistance, Junction-to-Case -- 1.67 °C/W RθJA* Thermal Resistance, Junction-to-Ambient* -- 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2006 Fairchild Semiconductor Corporation FQB3N60C REV. A1 1 www.fairchildsemi.com FQB3N60C 600V N-Channel MOSFET May 2006 Device Marking Device Package Reel Size Tape Width Quantity FQB3N60C FQB3N60CTM D2-PAK 330mm 24mm 800 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units 600 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C -- 0.6 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C --- --- 1 10 μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 2.0 -- 4.0 V -- 2.8 3.4 Ω -- 3.5 -- S -- 435 565 pF -- 45 60 pF -- 5 8 pF -- 12 34 ns -- 30 70 ns -- 35 80 ns -- 35 80 ns -- 10.5 14 nC -- 2.1 -- nC -- 4.5 -- nC 3 A On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 1.5A gFS Forward Transconductance VDS = 40V, ID = 1.5A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300V, ID = 3A RG = 25Ω (Note 4, 5) VDS = 480V, ID = 3A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 12 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 3A -- -- 1.4 V trr Reverse Recovery Time 260 -- ns Reverse Recovery Charge VGS = 0V, IS = 3A dIF/dt =100A/μs -- Qrr -- 1.6 -- μC (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 3A, VDD = 50V, L=30mH, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 3A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FQB3N60C REV. A1 2 www.fairchildsemi.com FQB3N60C 600V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics 10 Figure 2. Transfer Characteristics 1 10 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V 1 10 ID, Drain Current [A] ID, Drain Current [A] Top : 0 o 150 C o 25 C o -55 C ∝ Notes : 1. VDS = 40V 2. 250レs Pulse Test ∝ Notes : 1. 250レs Pulse Test 2. TC = 25∩ 10 -1 10 0 10 10 1 0 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 1 10 IDR, Reverse Drain Current [A] RDS(ON) [ヘ ], Drain-Source On-Resistance 10 8 VGS = 10V 6 4 VGS = 20V 2 0 10 150∩ 25∩ ∝ Notes : 1. VGS = 0V 2. 250レs Pulse Test ∝ Note : TJ = 25∩ 0 -1 0 1 2 3 4 5 6 10 7 0.2 0.4 Figure 5. Capacitance Characteristics Coss 500 Ciss VGS, Gate-Source Voltage [V] Capacitances [pF] 600 400 300 ∝ Note ; 1. V GS = 0 V 2. f = 1 MHz Crss 100 10 1.2 1.4 1.6 VDS = 120V VDS = 300V 8 VDS = 480V 6 4 2 ∝ Note : ID = 3A 0 10 0 10 1 0 2 4 6 8 10 12 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] FQB3N60C REV. A1 1.0 Figure 6. Gate Charge Characteristics C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 700 0 -1 10 0.8 12 800 200 0.6 VSD, Source-Drain voltage [V] ID, Drain Current [A] 3 www.fairchildsemi.com FQB3N60C 600V N-Channel MOSFET Typical Performance Characteristics FQB3N60C 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ♦ Notes : 0.9 0.8 -100 1. VGS = 0 V 2. ID = 250 μA -50 0 50 100 150 2.5 2.0 1.5 1.0 ♦ Notes : 0.5 1. VGS = 10 V 2. ID = 1.5 A 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 3 Operation in This Area is Limited by R DS(on) 10 μs 1 100 μs ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 10 ms 0 10 DC -1 10 ∝ Notes : 2 1 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 10 0 10 1 2 10 0 25 3 10 10 50 75 100 125 150 TC, Case Temperature [∩ ] VDS, Drain-Source Voltage [V] Zヨ JC(t), Thermal Response Figure 11. Transient Thermal Response Curve 10 0 D = 0 .5 ∝ N o te s : 1 . Z ヨ J C(t) = 1 .6 7 ∩ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z ヨ J C(t) 0 .2 0 .1 10 0 .0 5 -1 0 .0 2 PDM 0 .0 1 s in g le p u ls e 10 t1 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FQB3N60C REV. A1 4 www.fairchildsemi.com FQB3N60C 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQB3N60C REV. A1 5 www.fairchildsemi.com FQB3N60C 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQB3N60C REV. A1 6 www.fairchildsemi.com FQB3N60C 600V N-Channel MOSFET Mechanical Dimensions D2-PAK Dimensions in Millimeters FQB3N60C REV. A1 7 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 8 FQB3N60C REV. A1 www.fairchildsemi.com FQB3N60C 600V N-Channel MOSFET TRADEMARKS