PDP SPMTM FVP18030IM3LSG1 Sustain Features General Description • Use of high speed 300V IGBTs with parallel FRDs It is an advanced samart power module(SPMTM) that Fairchild has newly developed and designed to provide very compact and optimized performance for the sustaining circuit of PDP driving system. It contains HVICs, buffers and low-loss high speed IGBTs that are needed to compose the sustaining circuits. Under voltage lock-out protection function enhances the system reliabilty. The high speed built-in HVIC provides optocoupler-less single power supply IGBT gate driving capability that further reduce the overall system size of PDP and the buffer provides high current driving capability of IGBTs. • Single-grounded power supply by means of built-in HVIC • Sufficient current driving capability for IGBTs due to adding a buffer • Isolation rating of 1500Vrms/min. • Low leakge current due to using an insulated metal substrates Applications • Sustain Part of a PDP(Plasma display panel) Package Outlines Figure 1. ©2006 Fairchild Semiconductor Corporation FVP18030IM3LSG1 Rev. A 1 www.fairchildsemi.com FVP18030IM3LSG1 Sustain March 2007 FVP18030IM3LSG1 Sustain Pin Configurations Top View Figure 2. 2 FVP18030IM3LSG1 Rev. A www.fairchildsemi.com FVP18030IM3LSG1 Sustain Pin Descriptions Pin Number Pin Name 1 COML Pin Descriptions Low-side Signal Ground 2 VINL Low-side Signal Input 3 VCCL Low-side Supply Voltage for HVIC 4 VBL Low-side Floating Supply Voltage for Buffer IC and IGBT Driving 5 GL Low-side Gate 6 VSL Low-side Floating Ground for Buffer IC and IGBT Driving 7 IGND 8 COMH 9 VINH 10 VCCH 11 VBH IMS Ground High-side Signal Ground High-side Signal Input High-side Supply Voltage for HVICg High-side Floating Supply Voltage for Buffer IC and IGBT Driving 12 GH High-side Gate 13 VSH High-side Floating Ground for Buffer IC and IGBT Driving 14 CH High-side IGBT Collector 15 EH High-side IGBT Emitter 16 AH High-side Diode Anode 17 CL Low-side IGBT Collector 18 AL Low-side Diode Anode 19 EL Low-side IGBT Emitter 3 FVP18030IM3LSG1 Rev. A www.fairchildsemi.com FVP18030IM3LSG1 Sustain Internal Equivalent Circuit and Input/Output Pins (Bottom View) (13) VSH (12) GH (11) VBH (14) CH HVIC (10) VCCH VCC (9) VINH (8) COMH IN Buffer IC VB VCC OUT COM OUT IN VS COM COM (15) EH (7) IGND (16) AH (6) VSL (5) GL (4) VBL (17) CL HVIC (3) VCCL VCC (2) VINL (1) COML IN COM Buffer IC VCC VB OUT (18) AL IN OUT COM VS COM (19) EL Figure 3. 4 FVP18030IM3LSG1 Rev. A www.fairchildsemi.com Symbol C = 25°C, Unless Otherwise Specified) Parameter Conditions VCC Control Supply Voltage VBS Control Bias Voltage Applied between VBL - VSL, VBH - VSH VIN Input Signal Voltage Applied between VINL-COML,VINH - COMH VRRM VIN IC IF(AV) Units 20 V 20 V -0.3~17 V Rating Units Between CL to EL, Between CH to EH VGH-EH=VGL-EL=0V , ICH=ICL=250µA 300 V Peak Repetitive Reverse Voltage Between CH to AH, Between CL to AL IAH=IAL=250µA 300 V Input Signal Voltage VINL, VINH -0.3 to Vcc+0.3 V Collector Current Continuous Between CL to EL, Between CH to EH 180 A Average Rectified Forward Current Between CH to AH, Between CL to AL 10 A Symbol VCE Applied between VCCL-COML, VCCH - COMH Rating Parameter Conditions Collector to Emitter Voltage ICP Pulsed Collector Current Between CL to EL, Between CH to EH (Note1) 450 A IFP Pulsed Diode Current Between CH to AH, Between CL to AL (Note1) 100 A Notes : 1. Pulse Width = 100µsec, Duty = 0.1; half sine wave *Icp limited by MAX Tj Symbol Parameter Conditions Tc=25°C per IGBT IGBT Dissipation Pd FRD Dissipation Rating Units 167 W Tc=100°C per IGBT 67 W Tc=25°C per diode 34 W 14 W Tj Operating Junction Temperture Tc=100°C per diode -20 ~ 150 °C TC Module Case Operation Temperature -20 ~ 125 °C TSTG Storage Temperature -40 ~ 125 °C VISO Isolation Voltage 1500 Vrms 60Hz, Sinusoidal, AC 1 minute, Connection Pins to IMS substrate Thermal Resistance Symbol Rth(j-c) Parameter Junction to Case Thermal Resistance Conditions Min. Max. Units Between CH to EH, Between CL to EL per IGBT - 0.75 °C/W Between CH to AH, Between CL to AL per Diode - 3.70 °C/W 5 FVP18030IM3LSG1 Rev. A www.fairchildsemi.com FVP18030IM3LSG1 Sustain Absolute Maximum Ratings (T c Symbol Parameter Conditions Min. Typ. Max. Units IQCC Quiescent VCC Supply Current VCC = 15V VINL, VINH = 0V VCCL-COML, VCCH-COMH - - 100 µA IQBS Quiescent VBS Supply Current VBS = 15V VINL, VINH= 0V VBL- VSL, VBH- VSH - - 500 µA Detection Level 10.1 11.3 12.5 V Reset Level 10.5 11.7 12.9 V - V - 0.8 V Typ. Max. Units UVBSD UVBSR Supply Circuit Under Voltage Protection VIN(ON) ON Threshold Voltage VIN(OFF) OFF Threshold Voltage Symbol Applied between VINL-COML, ,VINH - COMH Condition Parameter 3.0 - Min. IGBT Collector-Emitter Saturation Voltage VCC = VBS = 15V VIN = 5V IC = 40A, TJ = 25°C - - 1.4 V VCE(SAT) IC = 180A, TJ = 25°C - 1.9 - V VF Diode Forward Voltage VIN = 0V IC =10A, TJ = 25°C - - 1.4 V - 230 - ns Switching Times VCE=200V, VCC= VBS=15V Ic = 20A VIN = 0V ↔ 5V , Inductive Load Tc = 25°C tdON tr tdOFF - 54 - ns - 260 - ns (Note2) - 108 - ns Collector-Emitter Leakage Current VCE = 300V - - 250 µA Diode Anode-Cathode Leakage Current Between EH to CH Between EL to CL 250 µA tF ICES IR VAnode-Cathode=300V Notes : 2. tON and tOFF include the propagation delay time of internal drive IC. For the detailed information, please see Figure 4. VIN VIN VCE IC td(off) 90% of IC 90% of IC 10% of IC IC td(on) tf VCE 10% of Ic tr Figure 4. Switching Time Definition 6 FVP18030IM3LSG1 Rev. A www.fairchildsemi.com FVP18030IM3LSG1 Sustain Electrical Characteristics (T = 25°C, Unless Otherwise Specified) FVP18030IM3LSG1 Sustain Typical Performance Characteristics Figure 6. Typical Output Characteristics Figure 5. Typical Output Characteristics 300 o T C = 25 C 300 20V o T C = 125 C 20V 15V 15V 250 Collector Current, IC [A] Collector Current, IC [A] 250 12V 10V 200 150 100 V GE = 8V 12V 10V 200 150 100 50 V GE = 8V 50 0 0 2 4 0 6 0 Collector-Emitter Voltage, V C E [V] 2 4 6 Collector-Emitter Voltage, V CE [V] Figure 7. Typical Forward Voltage Drop Figure 8. Typical Forward Voltage Drop 100 o TC = 125 C o TC = 25 C 10 o TC = 75 C 1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 100 100µs 1ms 10 1 0.1 0.01 0.1 2.0 Single Nonrepetitive o Pulse Tc=25 C Curves must be derated linearly with increase in temperature 1 10 100 1000 Collector-Emitter Voltage, VCE [V] FORWARD VOLTAGE. VF [V] 7 FVP18030IM3LSG1 Rev. A 50µs Ic MAX (Pulsed) Collector Current, Ic [A] FORWARD CURRENT, IF [A] Between CL to AL Between CH to EH www.fairchildsemi.com Parameter Mounting Torque Device Flatness Limits Conditions Mounting Screw: - M3 Recommended 0.62N•m Note Figure 5 Units Min. Typ. Max. 0.51 0.62 0.72 N•m 0 - +100 µm - 13.4 - g Weight (+) (+) Figure 9. Flatness Measurement Position 8 FVP18030IM3LSG1 Rev. A www.fairchildsemi.com FVP18030IM3LSG1 Sustain Mechanical Characteristics and Ratings FVP18030IM3LSG1 Sustain Detailed Package Outline Drawings Figure 10. 9 FVP18030IM3LSG1 Rev. A www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Across the board. 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A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I24 10 FVP18030IM3LSG1 Rev. A www.fairchildsemi.com FVP18030IM3LSG1 Sustain tm