FAIRCHILD FVP18030IM3LSG1

PDP SPMTM
FVP18030IM3LSG1
Sustain
Features
General Description
• Use of high speed 300V IGBTs with parallel FRDs
It is an advanced samart power module(SPMTM) that Fairchild
has newly developed and designed to provide very compact
and optimized performance for the sustaining circuit of PDP
driving system. It contains HVICs, buffers and low-loss high
speed IGBTs that are needed to compose the sustaining circuits. Under voltage lock-out protection function enhances the
system reliabilty. The high speed built-in HVIC provides optocoupler-less single power supply IGBT gate driving capability
that further reduce the overall system size of PDP and the buffer
provides high current driving capability of IGBTs.
• Single-grounded power supply by means of built-in HVIC
• Sufficient current driving capability for IGBTs due to adding a
buffer
• Isolation rating of 1500Vrms/min.
• Low leakge current due to using an insulated metal substrates
Applications
• Sustain Part of a PDP(Plasma display panel)
Package Outlines
Figure 1.
©2006 Fairchild Semiconductor Corporation
FVP18030IM3LSG1 Rev. A
1
www.fairchildsemi.com
FVP18030IM3LSG1 Sustain
March 2007
FVP18030IM3LSG1 Sustain
Pin Configurations
Top View
Figure 2.
2
FVP18030IM3LSG1 Rev. A
www.fairchildsemi.com
FVP18030IM3LSG1 Sustain
Pin Descriptions
Pin Number
Pin Name
1
COML
Pin Descriptions
Low-side Signal Ground
2
VINL
Low-side Signal Input
3
VCCL
Low-side Supply Voltage for HVIC
4
VBL
Low-side Floating Supply Voltage for Buffer IC and IGBT Driving
5
GL
Low-side Gate
6
VSL
Low-side Floating Ground for Buffer IC and IGBT Driving
7
IGND
8
COMH
9
VINH
10
VCCH
11
VBH
IMS Ground
High-side Signal Ground
High-side Signal Input
High-side Supply Voltage for HVICg
High-side Floating Supply Voltage for Buffer IC and IGBT Driving
12
GH
High-side Gate
13
VSH
High-side Floating Ground for Buffer IC and IGBT Driving
14
CH
High-side IGBT Collector
15
EH
High-side IGBT Emitter
16
AH
High-side Diode Anode
17
CL
Low-side IGBT Collector
18
AL
Low-side Diode Anode
19
EL
Low-side IGBT Emitter
3
FVP18030IM3LSG1 Rev. A
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FVP18030IM3LSG1 Sustain
Internal Equivalent Circuit and Input/Output Pins (Bottom View)
(13) VSH
(12) GH
(11) VBH
(14) CH
HVIC
(10) VCCH
VCC
(9) VINH
(8) COMH
IN
Buffer IC
VB
VCC
OUT
COM
OUT
IN
VS
COM
COM
(15) EH
(7) IGND
(16) AH
(6) VSL
(5) GL
(4) VBL
(17) CL
HVIC
(3) VCCL
VCC
(2) VINL
(1) COML
IN
COM
Buffer IC
VCC
VB
OUT
(18) AL
IN
OUT
COM
VS
COM
(19) EL
Figure 3.
4
FVP18030IM3LSG1 Rev. A
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Symbol
C
= 25°C, Unless Otherwise Specified)
Parameter
Conditions
VCC
Control Supply Voltage
VBS
Control Bias Voltage
Applied between VBL - VSL, VBH - VSH
VIN
Input Signal Voltage
Applied between VINL-COML,VINH - COMH
VRRM
VIN
IC
IF(AV)
Units
20
V
20
V
-0.3~17
V
Rating
Units
Between CL to EL, Between CH to EH
VGH-EH=VGL-EL=0V , ICH=ICL=250µA
300
V
Peak Repetitive Reverse Voltage
Between CH to AH, Between CL to AL
IAH=IAL=250µA
300
V
Input Signal Voltage
VINL, VINH
-0.3 to
Vcc+0.3
V
Collector Current Continuous
Between CL to EL, Between CH to EH
180
A
Average Rectified Forward Current
Between CH to AH, Between CL to AL
10
A
Symbol
VCE
Applied between VCCL-COML, VCCH - COMH
Rating
Parameter
Conditions
Collector to Emitter Voltage
ICP
Pulsed Collector Current
Between CL to EL, Between CH to EH (Note1)
450
A
IFP
Pulsed Diode Current
Between CH to AH, Between CL to AL (Note1)
100
A
Notes :
1. Pulse Width = 100µsec, Duty = 0.1; half sine wave
*Icp limited by MAX Tj
Symbol
Parameter
Conditions
Tc=25°C per IGBT
IGBT Dissipation
Pd
FRD Dissipation
Rating
Units
167
W
Tc=100°C per IGBT
67
W
Tc=25°C per diode
34
W
14
W
Tj
Operating Junction Temperture
Tc=100°C per diode
-20 ~ 150
°C
TC
Module Case Operation Temperature
-20 ~ 125
°C
TSTG
Storage Temperature
-40 ~ 125
°C
VISO
Isolation Voltage
1500
Vrms
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to IMS substrate
Thermal Resistance
Symbol
Rth(j-c)
Parameter
Junction to Case Thermal
Resistance
Conditions
Min.
Max.
Units
Between CH to EH, Between CL to EL per IGBT
-
0.75
°C/W
Between CH to AH, Between CL to AL per Diode
-
3.70
°C/W
5
FVP18030IM3LSG1 Rev. A
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FVP18030IM3LSG1 Sustain
Absolute Maximum Ratings (T
c
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
IQCC
Quiescent VCC Supply
Current
VCC = 15V
VINL, VINH = 0V
VCCL-COML,
VCCH-COMH
-
-
100
µA
IQBS
Quiescent VBS Supply
Current
VBS = 15V
VINL, VINH= 0V
VBL- VSL, VBH- VSH
-
-
500
µA
Detection Level
10.1
11.3
12.5
V
Reset Level
10.5
11.7
12.9
V
-
V
-
0.8
V
Typ.
Max.
Units
UVBSD
UVBSR
Supply Circuit Under
Voltage Protection
VIN(ON)
ON Threshold Voltage
VIN(OFF)
OFF Threshold Voltage
Symbol
Applied between VINL-COML, ,VINH - COMH
Condition
Parameter
3.0
-
Min.
IGBT Collector-Emitter
Saturation Voltage
VCC = VBS = 15V
VIN = 5V
IC = 40A, TJ = 25°C
-
-
1.4
V
VCE(SAT)
IC = 180A, TJ = 25°C
-
1.9
-
V
VF
Diode Forward Voltage
VIN = 0V
IC =10A, TJ = 25°C
-
-
1.4
V
-
230
-
ns
Switching Times
VCE=200V, VCC= VBS=15V
Ic = 20A
VIN = 0V ↔ 5V , Inductive Load
Tc = 25°C
tdON
tr
tdOFF
-
54
-
ns
-
260
-
ns
(Note2)
-
108
-
ns
Collector-Emitter
Leakage Current
VCE = 300V
-
-
250
µA
Diode Anode-Cathode
Leakage Current
Between EH to CH
Between EL to CL
250
µA
tF
ICES
IR
VAnode-Cathode=300V
Notes :
2. tON and tOFF include the propagation delay time of internal drive IC. For the detailed information, please see Figure 4.
VIN
VIN
VCE
IC
td(off)
90% of IC
90% of IC
10% of IC
IC
td(on)
tf
VCE
10% of Ic
tr
Figure 4. Switching Time Definition
6
FVP18030IM3LSG1 Rev. A
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FVP18030IM3LSG1 Sustain
Electrical Characteristics (T = 25°C, Unless Otherwise Specified)
FVP18030IM3LSG1 Sustain
Typical Performance Characteristics
Figure 6. Typical Output Characteristics
Figure 5. Typical Output Characteristics
300
o
T C = 25 C
300
20V
o
T C = 125 C
20V
15V
15V
250
Collector Current, IC [A]
Collector Current, IC [A]
250
12V
10V
200
150
100
V GE = 8V
12V
10V
200
150
100
50
V GE = 8V
50
0
0
2
4
0
6
0
Collector-Emitter Voltage, V C E [V]
2
4
6
Collector-Emitter Voltage, V CE [V]
Figure 7. Typical Forward Voltage Drop
Figure 8. Typical Forward Voltage Drop
100
o
TC = 125 C
o
TC = 25 C
10
o
TC = 75 C
1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
100
100µs
1ms
10
1
0.1
0.01
0.1
2.0
Single Nonrepetitive
o
Pulse Tc=25 C
Curves must be derated
linearly with increase
in temperature
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
FORWARD VOLTAGE. VF [V]
7
FVP18030IM3LSG1 Rev. A
50µs
Ic MAX (Pulsed)
Collector Current, Ic [A]
FORWARD CURRENT, IF [A]
Between CL to AL
Between CH to EH
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Parameter
Mounting Torque
Device Flatness
Limits
Conditions
Mounting Screw: - M3
Recommended 0.62N•m
Note Figure 5
Units
Min.
Typ.
Max.
0.51
0.62
0.72
N•m
0
-
+100
µm
-
13.4
-
g
Weight
(+)
(+)
Figure 9. Flatness Measurement Position
8
FVP18030IM3LSG1 Rev. A
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FVP18030IM3LSG1 Sustain
Mechanical Characteristics and Ratings
FVP18030IM3LSG1 Sustain
Detailed Package Outline Drawings
Figure 10.
9
FVP18030IM3LSG1 Rev. A
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PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1.
Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
2.
A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I24
10
FVP18030IM3LSG1 Rev. A
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FVP18030IM3LSG1 Sustain
tm