GM71V65803A
GM71VS65803AL
LG Semicon Co.,Ltd.
8,388,608 WORDS x 8 BIT
CMOS DYNAMIC RAM
Description
Pin Configuration
The GM71V(S)65803A/AL is the new generation
dynamic RAM organized 8,388,608 words by 8bits.
The GM71V(S)65803A/AL utilizes advanced CMOS
Silicon Gate Process Technology as well as
advanced circuit techniques for wide operating
margins, both internally and to the system user.
System oriented features include single power supply
of 3.3V+/-10% tolerance, direct interfacing
capability with high performance logic families such
as Schottky TTL.
The GM71V(S)65803A/AL offers Extended Data
Out (EDO) Mode as a high speed access mode.
Features
* 8,388,608 Words x 8 Bit
* Extended Data Out (EDO) Mode Capability
* Fast Access Time & Cycle Time
(Unit: ns)
tRAC
tAA
tCAC
tRC
tHPC
GM71V(S)65803A/AL-5
50
25
13
84
20
GM71V(S)65803A/AL-6
60
30
15
104
25
32 SOJ / TSOP II
VCC
1
32
VSS
IO0
2
31
IO7
IO1
3
30
IO6
IO2
4
29
IO5
IO3
5
28
IO4
NC
6
27
VSS
VCC
7
26
/CAS
/WE
8
25
/OE
/RAS
9
24
NC
A0
10
23
A11
A1
11
22
A10
A2
12
21
A9
A3
13
20
A8
A4
14
19
A7
A5
15
18
A6
VCC
16
17
VSS
*Power dissipation
- Active : 702mW/630mW(MAX)
- Standby : 1.8 mW ( CMOS level : MAX )
0.54mW ( L-Version : MAX)
*EDO page mode capability
*Access time : 50ns/60ns (max)
*Refresh cycles
- RAS only Refresh
4096 cycles/64 §Â (GM71V65803A)
4096 cycles/128§Â (GM71VS65803AL)(L_Version)
*CBR & Hidden Refresh
4096 cycles/64 §Â (GM71V65803A)
4096 cycles/128 §Â (GM71VS65803AL)( L-Version )
*4 variations of refresh
-RAS-only refresh
-CAS-before-RAS refresh
-Hidden refresh
-Self refresh (L-Version)
*Single Power Supply of 3.3V+/-10 % with a built-in VBB generator
*Battery Back Up Operation ( L-Version )
(Top View)
1
LG Semicon
GM71V(S)65803A/AL
Pin Description
Pin
Function
A0-A11
Address Inputs
A0-A11
Refresh Address Inputs
Pin
Function
Write Enable
WE
I/O0 - I/O7
Data Input / Output
RAS
Row Address Strobe
VCC
Power (+3.3V)
CAS
Column Address Strobe
VSS
Ground
OE
Output Enable
NC
No Connection
Ordering Information
Type No.
Access Time
Package
GM71V(S)65803A/ALJ-5
GM71V(S)65803A/ALJ-6
50§À
60§À
400 Mil
32Pin
Plastic SOJ
GM71V(S)65803A/ALT-5
GM71V(S)65803A/ALT-6
50§À
60§À
400 Mil
32Pin
Plastic TSOP II
Absolute Maximum Ratings*
Symbol
TSTG
Parameter
Rating
Unit
-55 to 125
C
-0.5 to VCC + 0.5
(MAX ; 4.6V)
V
-0.5 to 4.6
V
Storage Temperature (Plastic)
VT
Voltage on any Pin Relative to VSS
VCC
Voltage on VCC Relative to VSS
IOUT
Short Circuit Output Current
50
mA
Power Dissipation
1.0
W
PT
*Note : Operation at or above Absolute Maximum Ratings can adversely affect device reliability.
Recommended DC Operating Conditions (TA = 0 ~ 70C)
Symbol
Parameter
Min
Typ
Max
Unit
Notes
VCC
Supply Voltage
3.0
3.3
3.6
V
1,2
VSS
Supply Voltage
0
0
0
V
2
VIH
Input High Voltage
2.0
-
Vcc+0.3
V
1
VIL
Input Low Voltage
-0.3
-
0.8
V
1
TA
Ambient Temperature under Bias
0
-
70
C
2
LG Semicon
GM71V(S)65803A/AL
DC Electrical Characteristics: (VCC = 3.3V+/-10%, TA = 0 ~ 70C)
Symbol
Parameter
Min
Max
Unit
VOH
Output Level
Output Level Voltage (IOUT = -2mA)
2.4
VCC
V
VOL
Output Level
Output Level Voltage (IOUT = 2mA)
0
0.4
V
ICC1
Operating Current (tRC = tRC min)
50ns
-
195
60ns
-
175
-
2
mA
ICC2
Standby Current (TTL interface)
Power Supply Standby Current
(RAS, CAS= VIH, DOUT = High-Z)
ICC3
RAS-Only Refresh Current
( tRC = tRC min)
50ns
-
195
60ns
-
175
Extended Data Out page Mode Current
(RAS = VIL, CAS, Address Cycling: tHPC = tHPC min)
50ns
-
110
60ns
-
100
CMOS interface
(RAS, CAS>=VCC-0.2V, DOUT = High-Z)
-
0.5
mA
Standby Current(L_Version)
-
300
uA
-
160
ICC4
ICC5
ICC6
CAS-before-RAS Refresh Current
(tRC = tRC min)
50ns
60ns
Note
1,2
mA
mA
2
mA
1,3
4
mA
140
ICC7
Battery Back Up Operating Current(Standby with CBR)
(tRC=31.25us,tRAS=300ns,Dout=High-Z)
-
500
uA
4, 5
ICC8
Standby Current (CMOS)
Power Supply Standby Current
RAS = VIH, CAS = VIL , DOUT = Enable
-
5
mA
1
ICC9
Self Refresh Current
(RAS, CAS <=0.2V,Dout=High-Z)
-
400
uA
5
II(L)
Input Leakage Current, Any Input
(0V<=VIN<=Vcc)
-5
5
uA
IO(L)
Output Leakage Current
(DOUT is Disabled, 0V<=VOUT<=Vcc)
-5
5
uA
Note: 1. ICC depends on output load condition when the device is selected. ICC(max) is specified at the
output open condition.
2. Address can be changed once or less while RAS = VIL.
3. Measured with one sequential address change per EDO cycle, tHPC.
4. VIH>=VCC-0.2V, 0V<=VIL<=0.2V
5. L-Version
3
LG Semicon
GM71V(S)65803A/AL
Capacitance (VCC = 3.3V+/-10%, TA = 25C)
Symbol
Parameter
Typ
Max
Unit
Note
CI1
Input Capacitance (Address)
-
5
§Ü
1
CI2
Input Capacitance (Clocks)
-
7
§Ü
1
CI/O
Output Capacitance (Data-in,Data-Out)
-
7
§Ü
1, 2
Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. RAS, CAS = VIH to disable DOUT.
AC Characteristics (VCC = 3.3V+/-10%, TA = 0 ~ 70C, Notes 1, 2,19)
Test Conditions
Input rise and fall times : 2ns
Output timing reference levels : VOL/VOH = 0.8/2.0V
Input level : VIL/VIH = 0.0/3.0V
Output load : 1 TTL gate+CL (100pF)
Input timing reference levels : VIL/VIH = 0.8/2.0V
(Including scope and jig)
Read, Write, Read-Modify-Write and Refresh Cycles (Common Parameters)
Symbol
Parameter
GM71V(S)65803A/AL-5 GM71V(S)65803A/AL-6
Unit
Min
Max
Min
Max
-
104
-
§À
40
-
§À
Notes
tRC
Random Read or Write Cycle Time
84
tRP
RAS Precharge Time
30
tCP
CAS Precharge Time
8
-
10
-
§À
tRAS
RAS Pulse Width
50
10000
60
10000
§À
tCAS
CAS Pulse Width
8
10000
10
10000
§À
tASR
Row Address Set-up Time
0
-
0
-
§À
tRAH
Row Address Hold Time
8
-
10
-
§À
tASC
Column Address Set-up Time
0
-
0
-
§À
tCAH
Column Address Hold Time
8
-
10
-
§À
tRCD
RAS to CAS Delay Time
12
37
14
45
§À
3
tRAD
RAS to Column Address Delay Time
10
25
12
30
§À
4
tRSH
RAS Hold Time
13
-
17
-
§À
tCSH
CAS Hold Time
35
-
40
-
§À
tCRP
CAS to RAS Precharge Time
5
-
5
-
§À
tODD
OE to DIN Delay Time
13
-
15
-
§À
5
tDZO
OE Delay Time from DIN
0
-
0
-
§À
6
tDZC
CAS Delay Time from DIN
0
-
0
-
§À
6
tT
TransitionTime (Rise and Fall)
2
50
2
50
§À
tREF
Refresh Period
Refresh Period ( L-Version )
-
-
64
-
64
§Â
128
-
128
§Â
7
4096
cycles
4096
cycles
4
LG Semicon
GM71V(S)65803A/AL
Read Cycles
Symbol
Parameter
GM71V(S)65803A/AL-5 GM71V(S)65803A/AL-6
Notes
Unit
Min
Max
Min
Max
tRAC
Access Time from RAS
-
50
-
60
§À
8,9
tCAC
Access Time from CAS
-
13
-
15
§À
9,10,17
tAA
tOAC
Access Time from Column Address
-
25
-
30
§À
9,11,17
Access Time from OE
-
13
-
15
§À
9
tRCS
Read Command Set-up Time
0
-
0
-
§À
tRCH
Read Command Hold Time to CAS
0
-
0
-
§À
12
tRRH
Read Command Hold Time to RAS
0
-
0
-
§À
12
tRAL
Column Address to RAS Lead Time
25
-
30
-
§À
tCAL
Column Address to CAS Lead Time
15
-
18
-
§À
tOFF
Output Buffer Turn-off Delay Time from CAS
-
13
-
15
§À
13,21
tOEZ
Output Buffer Turn-off Delay Time from OE
-
13
-
15
§À
13
tCDD
CAS to DIN Delay Time
13
-
15
-
§À
5
tRDD
RAS to DIN Delay Time
13
-
15
-
§À
tWDD
WE to DIN Delay Time
13
-
15
-
§À
tOFR
Output Buffer Turn-off Delay Time from RAS
-
13
-
15
§À
13,21
tWEZ
Output Buffer Turn-off Delay Time from WE
-
13
-
15
§À
13
tOH
Output Data Hold Time
3
-
3
-
§À
21
tOHR
Output Data Hold Time from RAS
3
-
3
-
§À
21
tRCHR
Read Command Hold Time from RAS
50
-
60
-
§À
tOHO
Output data hold time from OE
3
-
3
-
§À
tCLZ
CAS to Output in Low - Z
0
-
0
-
§À
5
LG Semicon
GM71V(S)65803A/AL
Write Cycles
GM71V(S)65803A/AL-5
GM71V(S)65803A/AL-6
Parameter
Symbol
Unit
Min
Max
Min
Max
Notes
tWCS
Write Command Set-up Time
0
-
0
-
§À
tWCH
Write Command Hold Time
8
-
10
-
§À
tWP
Write Command Pulse Width
8
-
10
-
§À
tRWL
Write Command to RAS Lead Time
13
-
17
-
§À
tCWL
Write Command to CAS Lead Time
8
-
10
-
§À
tDS
Data-in Set-up Time
0
-
0
-
§À
15
tDH
Data-in Hold Time
8
-
10
-
§À
15
14
Read-Modify-Write Cycles
GM71V(S)65803A/AL-5
GM71V(S)65803A/AL-6
Parameter
Symbol
Unit
Min
Max
Min
Max
Notes
tRWC
Read-Modify-Write Cycle Time
116
-
140
-
§À
tRWD
RAS to WE Delay Time
67
-
79
-
§À
14
tCWD
CAS to WE Delay Time
30
-
34
-
§À
14
tAWD
Column Address to WE Delay Time
42
-
49
-
§À
14
tOEH
OE Hold Time from WE
13
-
15
-
§À
Refresh Cycle
Cycles
GM71V(S)65803A/AL-5
Symbol
Parameter
GM71V(S)65803A/AL-6
Unit
Min
Max
Min
Max
tCSR
CAS Set-up Time
(CAS-before-RAS Refresh Cycle)
5
-
5
-
§À
tCHR
CAS Hold Time
(CAS-before-RAS Refresh Cycle)
8
-
10
-
§À
tWRP
WE setup time
(CAS-before-RAS Refresh Cycle)
0
-
0
-
§À
tWRH
WE hold time
(CAS-before-RAS Refresh Cycle)
8
-
10
-
§À
tRPC
RAS Precharge to CAS Hold Time
5
-
5
-
§À
Notes
6
LG Semicon
GM71V(S)65803A/AL
Extended Data Out Mode Cycles
GM71V(S)65803A/AL-5 GM71V(S)65803A/AL-6
Symbol
Parameter
Unit
Min
Max
Min
Max
20
-
25
-
tHPC
EDO Page Mode Cycle Time
tWPE
Write pulse width during CAS Precharge
8
-
10
tRASP
EDO Mode RAS Pulse Width
-
100000
tACP
Access Time from CAS Precharge
-
tRHCP
RAS Hold Time from CAS Precharge
Notes
20
-
§À
§À
-
100000
§À
16
28
-
35
§À
9,17
28
-
35
-
§À
tCOL
CAS Hold Time Referred OE
8
-
10
-
§À
tCOP
CAS to OE set-up Time
5
-
5
-
§À
tRCHP
Read Command Hold Time from CAS
Precharge
28
-
35
-
§À
tDOH
tOEP
Output Data Hold Time from CAS Low
3
-
3
-
§À
OE Precharge Time
8
-
10
-
§À
9,22
EDO Page Mode Read-Modify-Write cycle
GM71V(S)65803A/AL-5 GM71V(S)65803A/AL-6
Symbol
Parameter
Unit
Min
Max
Min
Max
57
-
68
-
§À
45
-
54
-
§À
tHPRWC EDO Read-Modify-Write Cycle Time
tCPW
EDO Page Mode Read-Modify-Write Cycle
CAS Precharge to WE Delay Time
Notes
14
Self Refresh Cycles (L_Version)
GM71V(S)65803A/AL-5
Symbol
Parameter
GM71V(S)65803A/AL-6
Min
Max
Min
Max
Unit
Notes
tRASS
RAS Pulse Width(Self-Refresh)
100
-
100
-
us
26
tRPS
tCHS
RAS Precharge Time(Self-Refresh)
90
-
110
-
§À
26
CAS Hold Time(Self-Refresh)
-50
-
-50
-
§À
7
LG Semicon
GM71V(S)65803A/AL
Notes:
1.
2.
AC measurements assume tT = 2 § .À
AC initial pause of 200 § Áis required after power up followed by a minimum of eight
initialization cycles ( any combination of cycles containing RAS-only refresh or CAS-beforeRAS refresh)
3.
Operation with the tRCD(max) limit insures that tRAC(max) can be met, tRCD(max) is specified as a
reference point only: if tRCD is greater than the specified tRCD(max) limit, then access time is
controlled exclusively by tCAC.
4.
Operation with the tRAD(max) limit insures that tRAC(max) can be met, tRAD(max) is specified as a
reference point only: if tRAD is greater than the specified tRAD(max) limit, then access time is
controlled exclusively by tAA.
5.
Either tOED or tCDD must be satisfied.
6.
Either tDZO or tDZC must be satisfied.
7.
V IH(min) and V IL(max) are reference levels for measuring timing of input signals. Also,
transition times are measured between VIH(min) and VIL (max).
8.
Assumes that tRCD¡ Â
tRCD(max) and tRAD¡ Â
tRAD(max). If tRCD or tRAD is greater than the maximum
recommended value shown in this table, tRAC exceeds the value shown.
9.
Measured with a load circuit equivalent to 1 TTL loads and 100 pF.
10. Assumes that tRCD¡ tÃRCD(max) and tRCD + tCAC(max) ¡ Ã
tRAD + tAA(max).
11. Assumes that tRAD ¡ Ã
tRAD (max) and tRCD + tCAC(max)¡ Â
tRAD + tAA(max).
12. Either tRCH or tRRH must be satisfied for a read cycles.
13. tOFF(max), tOEZ(max), tOFR(max) and tWEZ(max) define the time at which the outputs achieve the
open circuit condition and is not referenced to output voltage levels.
14. tWCS, tRWD, tCWD, tAWD, and tCPW are not restrictive operating parameters. They are included in the
data sheet as electrical characteristics only: if tWCS ¡ Ã
tWCS(min), the cycle is an early write cycle
and the data out pin will remain open circuit (high impedance) throughout the entire cycle: if
tRWD ¡ Ã
tRWD(min), tCWD¡ tÃCWD(min), tAWD¡ Ã
tAWD(min) and t CPW¡ Ã
tCPW(min), the cycle is a readmodify-write and the data output will contain data read from the selected cell: if neither of the
above sets of conditions is satisfied, the condition of the data out (at access time) is
indeterminate.
15. tDS and tDH are referred to CAS leading edge in early write cycles and to WE leading edge in
delayed write or read-modify-write cycles.
16. tRASP defines RAS pulse width in extended data out mode cycles.
17. Access time is determined by the longest among tAA, tCAC and tCPA.
18. In delayed write or read-modify-write cycles, OE must disable output buffer prior to applying
data to the device.
19. When output buffers are enabled once, sustain the low impedance state until valid daa is
obtained. When output buffer is turned on and off within a very short time, generally it causes
large VCC/VSS line noise, which causes to degrade VIH min/VIL max level.
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LG Semicon
GM71V(S)65803A/AL
20. tHPC(min) can be achieved during a series of EDO mode early write cycles or EDO mode read
cycles. If both write and read operation are mixed in a EDO mode, RAS cycle { EDO mode mix
cycle (1),(2) } minimum value of CAS cycle t HPC (tCAS + t CP + 2t T) becomes greater than the
specified tHPC(min) value. The value of CAS cycle time of mixed EDO page mode is shown in
EDO page mode mix cycle (1) and (2).
21. Data output turns off and becomes high impedance from later rising edge of RAS and CAS.
Hold time and turn off time are specified by the timing specifications of later rising edge of RAS
and CAS between tOHR and tOH, and between t OFR and tOFF.
t
22. DOH defines the time at which the output level go cross. V OL=0.8V, VOH=2.0V of output timing
reference level.
23. Before and after self refresh mode, execute CBR refresh to all refresh addresses in or within 64
§Â period on the condition a and b below.
a. Enter self refresh mode within 15.6 us after either burst refresh or distributed refresh at equal
interval to all refresh addresses are completed.
b. Start burst refresh or distributed refresh at equal interval to all refresh addressed within 15.6 us
after exiting from self refresh mode.
24. In case of entering from RAS-only-refresh, it is necessary to execute CBR refresh before and
after self refresh mode according as note 23.
25. For L_Version, it is available to apply each 128 §Â and 31.2 us instead of 64 §Â and 15.6us at
note 23.
26. At t RASS£¾100 us , self refresh mode is activated, and not active at t RASS £¼10us. It is undefined
within the range of 10 us £¼tRASS £¼100 us . for t RASS £¾10 us , it is necessary to satisfy t RPS.
XXX:
H or L ( H : V IH(min) <=
V IN<=
VIH(max), L: VIH(min) <=
V IN<=
VIH(max))
27.
///////: Invalid Dout
When the address, clock and input pins are not described on timing waveforms, their pins must
be applied VIH or V IL.
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LG Semicon
GM71V(S)65803A/AL
Timing Waveforms
tRC
tRAS
tRP
RAS
tCSH
tCRP
tRCD
tRSH
tCAS
tT
CAS
tRAD
tASR
ADDRESS
tRAL
tCAL
tRAH
tASC
ROW
tCAH
COLUMN
tRRH
tRCHR
tRCS
tRCH
WE
tCAC
tAA
tOFF
tWEZ
tCLZ
High-Z
DOUT
DOUT
tOFR tRDD
tRAC
tOHR
tOH
tOEZ
tOHO
tDZC
tWDD
tCDD
High-Z
DIN
tDZO
tOAC
tODD
OE
FIGURE 1. READ CYCLE
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LG Semicon
GM71V(S)65803A/AL
tRC
tRAS
tRP
RAS
tRSH
tT
tRCD
tCAS
tCRP
tCSH
CAS
tASR
ADDRESS
tRAH
tASC
ROW
tCAH
COLUMN
tWCS
tWCH
WE
tDS
DIN
tDH
DIN
High-Z
DOUT
FIGURE 2. EARLY WRITE CYCLE
11
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GM71V(S)65803A/AL
tRC
tRAS
tRP
RAS
tRSH
tT
tRCD
tCAS
tCRP
tCSH
CAS
tASR
ADDRESS
tRAH
tCAH
tASC
ROW
COLUMN
tCWL
tRCS
tRWL
tWP
WE
tDZC
tDH
tDS
High-Z
DIN
tDZO
DIN
tODD
tOEH
tOEP
OE
tOEZ
tCLZ
High-Z
DOUT
INVALID
OUTPUT
FIGURE 3. DELAYED WRITE CYCLE
*18
12
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GM71V(S)65803A/AL
tRWC
tRAS
tRP
RAS
tT
tRCD
tCAS
tCRP
CAS
tRAD
tRAH
tASR
ADDRESS
tASC
ROW
tCAH
COLUMN
tCWL
tRWL
tWP
tCWD
tAWD
tRCS
tRWD
WE
tAA
tRAC
tDZC
High-Z
DIN
tCLZ
tDH
tDS
tCAC
DIN
tODD
tOEH
High-Z
DOUT
DOUT
tOAC
tDZO
tOEZ
tOHO
tOEP
OE
*18
FIGURE 4. READ MODIFY WRITE CYCLE
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LG Semicon
GM71V(S)65803A/AL
tRC
tRAS
tRP
RAS
tCRP
tT
tRPC
tCRP
CAS
tASR
ADDRESS
tRAH
ROW
tOFR
tOFF
High-Z
DOUT
FIGURE 5. RAS ONLY REFRESH CYCLE
tRC
tRP
tRAS
tRC
tRP
tRAS
tRP
RAS
tT
tRPC
tCP
tRPC
tCSR
tCHR
tWRP
tWRH
tCP
tCRP
tCSR
tCHR
CAS
tWRP
tWRH
WE
ADDRESS
tOFR
tOFF
High-Z
DOUT
FIGURE 6. CAS BEFORE RAS REFRESH CYCLE
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LG Semicon
GM71V(S)65803A/AL
tRC
tRC
tRAS
tRP
tRAS
tRC
tRP
tRAS
tRP
RAS
tT
tCHR
tRSH
tRCD
tCRP
tCAS
CAS
tRAD
tASR
ADDRESS
tRAH
tASC
ROW
tRAL
tCAH
COLUMN
tRCH
tRRH
tRCS
WE
tWDD
tCDD
tDZC
tRDD
High-Z
DIN
tDZO
tOAC
tODD
OE
tCAC
tAA
tRAC
tOEZ
tWEZ
tOHO
tOFF
tOH
tCLZ
DOUT
DOUT
tOFR
tOHR
FIGURE 7. HIDDEN REFRESH CYCLE
15
LG Semicon
GM71V(S)65803A/AL
tRASP
tRP
tHPC
RAS
tHPC
tT
tCSH
tCP
tRHCP
tCP
tCP tRSH
CAS
tCAS
tCRP
tHPC
tCAS
tCAS
tCAS
tRCHR
tRCHP
tRCS
tRRH
tRCH
tRCH
WE
tRAL
tWDD
tRAH tASC
tASR
ADDRESS
ROW
tWPE
tASC
tCAH
COLUMN
tCAH
tCAH
tASC
COLUMN
tCAL
tASC
COLUMN
tCAL
tCAH
COLUMN
tCAL
tCAL
tDZC
tRDD
tCDD
High-Z
DIN
tCOL
tDZO
tCOP
tOEP
tODD
tOEP
OE
tOAC
tCAC
tOHO
tAA
tCAC
tCAC
DOUT 1
DOUT 2
tACP
tAA
tCAC
tOEZ
tOAC
tWEZ
tACP
tRAC
High-Z
tACP
tAA
tAA
DOUT
tOEZ
tDOH
DOUT 2
tOAC
tOHR
tOFR
tOEZ
tOHO
tOFF
tOH
tOHO
DOUT 3
DOUT 4
FIGURE 8. EXTENDED DATA OUT PAGE MODE READ CYCLE(1)
16
LG Semicon
GM71V(S)65803A/AL
tRASP
tRP
tHPC
RAS
tHPC
tT
tCSH
tCP
tRHCP
tCP
tCP tRSH
CAS
tCAS
tCRP
tHPC
tCAS
tCAS
tCAS
tRCHP
tRRH
tRCH
tRCS
WE
tRAL
tWDD
tRAH tASC
tASR
ADDRESS
tCAH
ROW
tASC
COLUMN1
tCAH
tCAH
tASC
COLUMN2
tCAL
tASC
COLUMN3
tCAL
tCAH
COLUMN4
tCAL
tCAL
tDZC
tRDD
tCDD
High-Z
DIN
tCOL
tDZO
tCOP
tOEP
tODD
tOEP
OE
tOEZ
tACP
tOHO
tAA
tCAC
tOAC
tCAC
tCAC
tAA
tAA
tRAC
DOUT
High-Z
tDOH
DOUT 1
tOEZ
tOAC
tDOH
tACP
DOUT 2
tACP
tAA
tCAC
DOUT 2
tOAC
tOHR
tOFR
tOEZ
tOHO
tOFF
tOH
tOHO
DOUT 3
DOUT 4
FIGURE 8. EXTENDED DATA OUT PAGE MODE READ CYCLE(2)
17
LG Semicon
GM71V(S)65803A/AL
tRP
tRASP
RAS
tT
tHPC
tCSH
tRCD
tCAS
tCP
tCAS
tRSH
tCRP
tCP
tCAS
CAS
tASR
tRAH
ADDRESS
tASC
ROW
tCAH
COLUMN 1
tWCS
tWCH
tASC
tCAH
COLUMN 2
tWCS
tWCH
tASC
tCAH
COLUMN N
tWCS
tWCH
WE
tDS
DIN
tDH
tDS
DIN 1
tDH
DIN 2
tDS
tDH
DIN N
High-Z*
DOUT
FIGURE 10. EXTENDED DATA OUT MODE EARLY WRITE CYCLE
18
LG Semicon
GM71V(S)65803A/AL
tRP
tRASP
RAS
tCP
tT
tCP
tCSH
tCRP
tHPC
tRCD
tCAS
tRSH
tCAS
tCAS
CAS
tASR
tASC
tRAH
ADDRESS
tASC
tRAD
ROW
tASC
tCAH
tCAH
tCAH
COLUMN 1
COLUMN 2
COLUMN N
tCWL
tRCS
tCWL
tRCS
tCWL
tRWL
tRCS
WE
tWP
tDZC
tDS
tWP
tDS
tDZC
tDH
DIN
tDH
DIN 1
tDZO
DIN N
tDZO
tODD
tODD
tOEH
tOEH
OE
tOEH
tOEP
tCLZ
tCLZ
tOEZ
High-Z
DOUT
tDH
DIN 2
tDZO
tODD
tWP
tDS
tDZC
INVALID
DOUT
tOEP
tCLZ
tOEZ
INVALID
DOUT
tOEZ
INVALID
DOUT
*18
FIGURE 11. EXTENDED DATA OUT MODE DELAYED WRITE CYCLE
19
LG Semicon
GM71V(S)65803A/AL
tRP
tRASP
RAS
tHPRWC
tT
tCRP
tRSH
tCP
tRCD
tCAS
tCP
tCAS
tCAS
CAS
tRAD
tASR
tRAH
ADDRESS
tASC
tASC
tCAH
ROW
COLUMN 1
tRCS
tRWD
tAWD
tCWD
tASC
tCAH
tCAH
COLUMN 2
COLUMN N
tRCS
tCPW
tAWD
tCWD
tDZC
tDS
tCWL
tRCS
tCPW
tAWD
tCWD
tDZC
tDS
tCWL
tCWL
tRWL
WE
tWP
tDZC
tDS
tWP
tDH
DIN
tRAC
DIN N
tDZO
tOEP
tODD tOEH
tOEZ
tOAC
tCAC
tAA
tDH
DIN 2
tOEP tDZO
tODD tOEH
OE
tODD tOEH
tOEZ
tOHO
tOHO
tOAC
tCAC
tAA
tACP
tACP
tCLZ
DOUT 1
High-Z
tOEP
tOEZ
tCLZ
DOUT
tDH
DIN 1
tDZO
tWP
tOAC
tCAC
tOHO
tAA
tCLZ
DOUT 2
DOUT N
High-Z
FIGURE 12. EXTENDED DATA OUT MODE READ MODIFY WRITE CYCLE*18
20
LG Semicon
GM71V(S)65803A/AL
tRP
tRASP
RAS
tT
tCP
tCAS
tRCD
CAS
tCP
tCP
tCAS
tCRP
tCAS
tCAS
tCSH
tWCS tWCH
tWP
tRCS
tCPW
WE
tRAH
tASC
tRAL
ROW
tASC
tASC
tCAH
COLUMN
1
tDH
tDS
tASC
tCAH
tCAH
COLUMN
2
tCAH
COLUMN
4
COLUMN
3
tDS
tCAL
tCAL
tDH
Din
tRRH tRCH
tAWD
tASR
ADDRESS
tRSH
DIN 1
High - Z
tRDD
tCDD
DIN 3
tWDD
tODD
tOEP
OE
tCAC
tOAC
tAA
tACP
Dout
High - Z
tDOH
tAA
tACP
DOUT 2
tCAC
tOEZ
tOHO
tCAC
tAA
tOAC
tOFR
tOFF
tOH
tACP
tOEZ
DOUT 4
DOUT 3
FIGURE 13. EXTENDED DATA OUT MODE MIX CYCLE (1)
tWEZ
*20
21
LG Semicon
GM71V(S)65803A/AL
tRP
tRASP
RAS
tT
tCSH
tCP
tCAS
tRCD
CAS
tCP
tCRP
tCP
tCAS
tCAS
tCAS
tRCHR
tRCH tWCH
tWCS
tRCS
tRAH
tASC
tASR
COLUMN
4
tCAL
tDS
High - Z
DIN 2
Dout
tCAC
tAA
tOEZ
tOHO
DOUT 1
tRDD
tCDD
High - Z
tWDD
tODD
tOEP
OE
tCAC
tAA
tOAC
tRAC
tCAL
DIN 3
tCOL
tOEP
tCAL
tDH
tDS
tDH
tODD
tCAH
COLUMN
3
COLUMN
2
tCAL
Din
tASC
tCAH
tCAH
tCAH
COLUMN
1
ROW
tRAL
tASC
tASC
tRRH
tRCH
tCPW
WE
ADDRESS
tRSH
tWP
tCOP
tOEZ
tOAC
tOAC
tCAC
tAA
tOAC
tACP
tOFF
tOH
tOFR
tWEZ
tOEZ
DOUT 4
DOUT 3
tOHO
FIGURE 14. EXTENDED DATA OUT MODE MIX CYCLE (2)
*20
22
LG Semicon
GM71V(S)65803A/AL
tRP
tRASS
tRPS
RAS
tRPC
tT
tCHS
tCRP
tCSR
tCP
CAS
tWRP
tWRH
WE
tOFR
tOFF
High-Z
DOUT
FIGURE 15. SELF REFRESH CYCLE
*23, 24, 25, 26
23
LG Semicon
GM71V(S)65803A/AL
SOJ 32 pin PKG Dimension
Unit: mm
0.64 MIN
20.95 MIN
21.38 MAX
1.165 MAX
11.05 MIN
11.31 MAX
9.15 MIN
9.65 MAX
10.29 MAX
10.03 MIN
3.24 MIN
3.76 MAX
MIN
1.16 MAX
2.09 MIN
3.01 MAX
0.33 MIN
0.53 MAX
1.27
0.33 MIN
0.49 MAX
0.10
24
LG Semicon
GM71V(S)65803A/AL
TSOPII 32 PIN Package Dimension
0.40 MIN
0.60 MAX
10.16
11.56 MIN
0~5
1.15 MAX
0.42
0.08
0.40
0.06
1.27
0.145
0.05
0.125
0.04
0.80
0.68
1.20 MAX
NORMAL TYPE
Unit: mm
11.96 MAX
¡£
20.95 MIN
21.35 MAX
0.08 MIN
0.18 MAX
0.10
Dimension including the plating thickness
Base material dimension
25