GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Silicon IGBT Ignition Coil Driver REJ03G1249-0300 Rev.3.00 Jun 01, 2009 Features • Including Clamping Zener VCL = 400 V(typ) • Low saturation Voltage VCE(sat) = 1.4 V(typ) • SMD package LDPAK Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) 4 4 1 1 2 2 C 1. Gate 2. Collector 3. Emitter 4. Collector G 3 3 E Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to Emitter voltage Emitter to Collector voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Notes: 1. Value at Tc = 25°C REJ03G1249-0300 Rev.3.00 Jun 01, 2009 Page 1 of 7 Symbol Ratings Unit VCES VGES VECS IC iC(peak) PCNote1 Tj 370 ±20 24 14 18 60 150 V V V A A W °C Tstg –55 to +150 °C GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Electrical Characteristics (Ta = 25°C) Item Symbol V(BR)CES Min 370 Typ 400 Max 430 Unit V Test Conditions Ic = 2 mA, VGE = 0 V Collector to Emitter breakdown voltage Gate to Emitter breakdown voltage Collector cutoff current Gate cutoff current Collector to emitter saturation voltage Collector to emitter saturation voltage Gate to emitter cutoff voltage Turn-on delay time Rise time Turn-off delay time Fall time Input capacitance Output capacitance Reveres transfer capacitance Secondary breakdown energy V(BR)GES ICES IGES VCE(sat)1 VCE(sat)2 VGE(off) td(on) tr td (off) tf Ciss Coss Cres Es/b ±20 — — — — 1.3 — — — — — — — 230 — — — 1.4 1.6 — 0.2 0.4 1.0 5 1110 75 18 — — 100 ±100 1.7 2.2 2.2 — — — — — — — — V µA µA V V V µs µs µs µs pF pF pF mJ IG = ±100 µA, VCE = 0 V VCE = 300 V, VGE = 0 V VGE = ±20 V, VCE = 0 V IC = 8 A, VGE = 10 V IC = 8 A, VGE = 4 V IC = 1 mA, VCE = 10 V REJ03G1249-0300 Rev.3.00 Jun 01, 2009 Page 2 of 7 VCE = 300 V, RL = 50 Ω, VGE = 5 V, RG = 200 Ω VCE = 10 V, VGE = 0, f = 1 MHz L = 5 mH GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating IC (A) 100 60 Collector Current Collector Dissipation Pc (W) 80 40 20 10 DC PW Op er = 10 on m s 1s (T c= 1 1m s( ati 10 µs 10 0 µs ho t) 25 °C ) 0.1 Ta = 25°C 0.01 0 0 50 100 150 Case Temperature 200 1 Tc (°C) IC (A) 450 Collector Current Collector to Emitter Breakdown Voltage V(BR)CES (V) 10 400 350 IC = 2 mA 50 100 1000 6V Pulse Test 4V 6 4 2 VGE = 2 V 0 12 8 25°C -40°C 0 3 Gate to Emitter Voltage 4 5 VGE (V) REJ03G1249-0300 Rev.3.00 Jun 01, 2009 Page 3 of 7 Collector to Emitter Saturation Voltage VCE(sat) (V) 16 2 4 6 8 10 Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage VCE = 10 V Pulse Test Tc = 125°C 2 Collector to Emitter Voltage VCE (V) IC (A) 300 8 Tc (°C) 20 Collector Current 10 V 15 V 150 Typical Transfer Characteristics 1 100 0 0 Case Temperature 0 30 Typical Output Characteristics 500 4 10 Collector to Emitter Voltage VCE (V) Collector to Emitter Breakdown Voltage vs. Case Temperature 300 -50 3 5 Pulse Test 4 3 IC = 10 A 2 1 0 8A 0 4 8 6A 12 Gate to Emitter Voltage 16 20 VGE (V) GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Typical Capacitance vs. Collector to Emitter Voltage 10 10000 5 3000 Capacitance C (pF) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage vs. Collector Current -40°C 2 25°C 1 Tc = 125°C 0.5 0.2 VGE = 10 V Pulse Test 0.1 0.1 Cies 1000 300 100 Coes 30 Cres 10 VGE = 0 f = 1 MHz 3 1 0.3 1 3 10 Collector Current IC 30 100 0 (A) 12 30 8 20 10 4 VCE 0 20 40 60 Gate Charge 80 0 100 ISC (A) Secondary breakdown Current 100 50 25°C 10 Tc = 140°C 2 VCC = 16 V 1 0.1 VGE = 10 V, Rg = 200 Ω 0.2 0.5 1 td(off) 0.3 tr 0.1 td(on) 0.03 2 5 Inductance Ratio L (mH) REJ03G1249-0300 Rev.3.00 Jun 01, 2009 Page 4 of 7 VCC = 300 V, VGE = 10 V Rg = 200 Ω, Ta = 25°C 0.2 0.5 1 2 Collector Current Secondary Breakdown Current vs. Inductance Ratio 5 tf 1 Qg (nc) 20 50 3 0.01 0.1 10 Secondary breakdown energy Es/b (mJ) 0 40 10 Switching Time t (µs) 16 VGE (V) VGE VCE = 16 V Gate to Emitter Voltage VCE (V) Collector to Emitter Voltage 40 30 Switching Characteristics 20 IC = 10 A Ta = 25°C 20 Collector to Emitter Voltage VCE (V) Dynamic Input Characteristics 50 10 5 10 IC (A) Secondary Breakdown Energy vs. Case Temperature 1000 500 200 100 50 20 10 25 VCC = 16 V, L = 5 mH VGE = 10 V, Rg = 200 Ω 50 75 100 Case Temperature Tc (°C) 125 GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 3 Tc = 25°C 1 0.3 D=1 0.5 0.2 0.1 0.1 0.05 0.03 0.02 0.01 0.05 t ho θch - c(t) = θs (t) • θch - c θch - c = 2.08°C/W, Tc = 25°C lse pu PDM 1s D= 0.003 PW T PW T 0.001 10 µ 100 µ 1m 10 m Pulse Width 100 m 1 10 PW (S) Switching Time Test Circuit Waveform Ic Monitor 90% R Vin Vin Monitor 10% 90% Rg D.U.T. VCC Ic Vin = 10 V 10 % 10% td(on) tr ton REJ03G1249-0300 Rev.3.00 Jun 01, 2009 Page 5 of 7 90% td(off) tf toff GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Package Dimensions RENESAS Code PRSS0004AE-A MASS[Typ.] 1.40g 4.44 ± 0.2 1.3 ± 0.15 1.3 ± 0.2 1.37 ± 0.2 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B 2.49 ± 0.2 11.0 ± 0.5 0.2 0.86 +– 0.1 Package Name LDPAK(S)-(1) Unit: mm 10.2 ± 0.3 8.6 ± 0.3 11.3 ± 0.5 0.3 10.0 +– 0.5 Previous Code LDPAK(L) / LDPAK(L)V Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V 0.4 ± 0.1 MASS[Typ.] 1.30g 10.0 (1.5) 2.54 ± 0.5 REJ03G1249-0300 Rev.3.00 Jun 01, 2009 Page 6 of 7 0.4 ± 0.1 0.3 3.0 +– 0.5 2.54 ± 0.5 0.2 0.86 +– 0.1 7.8 7.0 2.49 ± 0.2 0.2 0.1 +– 0.1 1.37 ± 0.2 1.3 ± 0.2 7.8 6.6 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 Unit: mm 1.7 JEITA Package Code (1.4) Package Name LDPAK(L) 2.2 GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Ordering Information Part Name GN4014ZB4LD GN4014ZB4LS GN4014ZB4LM Quantity 50 pcs. 1000 pcs. 1000 pcs. 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