HUASHAN H548

N P N S I L I C O N T RAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H548
█ SWITCHING AND AMPLIFIER
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
TO-92
T stg ——Storage Temperature………………………… -55~150℃
T j ——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………500mW
1―Collector,C
2―Base,B
3―Emitter,E
VCBO——Collector-Base Voltage………………………………30V
VCEO——Collector-Emitter Voltage……………………………35V
V EB O ——Emitter-Base Voltage………………………………5V
I C ——Collector Current……………………………………100mA
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Min
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Unit
Test Conditions
30
V
IC=100μA, IE=0
Collector-Emitter Breakdown Voltage
30
V
IC=1mA, IB=0
BVEBO
Emitter-Base Breakdown Voltage
5
V
IE=1mA,IC=0
ICBO
Collector Cut-off Current
HFE
DC Current Gain
VCE(sat1)
Collector- Emitter Saturation Voltage
Max
15
110
VCE(sat2)
VBE(sat1)
Typ
Base-Emitter Saturation Voltage
VBE(sat2)
580
nA
800
VCB=30V, IE=0
VCE=5V, IC=2mA
90
250
mV
IC=10mA, IB=0.5mA
200
600
mV
IC=100mA, IB=5mA
0.7
1
V
IC=10mA, IB=0.5mA
0.9
1.2
V
IC=100mA, IB=5mA
660
700
mV
VCE=5V, IC=2mA
VCE=5V, IC=10mA
VCB=10V, IE=0
f=100MHz
VCE=5V, IC=200μA
f=1KHz,Rg=2KΩ
VBE(ON1)
Base-Emitter On Voltage
fT
Current Gain-Bandwidth Product
300
MHz
Cob
Output Capacitance
2.5
pF
NF
Noise Figure
2
10
dB
█ hFE Classification
A
B
C
110—220
200—450
420—800
N P N S I L I C O N T RAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H548