HITACHI HA13156

HA13156
38 W × 4-Channel BTL Power IC
ADE-207-241 (Z)
1st. Edition
July 1997
Description
The HA13156 is four-channel BTL amplifier IC designed for car audio, featuring high output and low
distortion, and applicable to digital audio equipment. It provides 38 W output per channel, with a 13.7 V
power supply and at Max distortion.
Functions
•
•
•
•
•
4 ch BTL power amplifiers
Built-in standby circuit
Built-in muting circuit
Built-in protection circuit (surge, T.S.D, and ASO)
Built-in change booster ON/OFF circuit
Features
•
•
•
•
High power for booster circuit
Popping noise minimized
Low output noise
Built-in high reliability protection circuit
HA13156
Block Diagram
C11
0.47µ
16
INVCC
SW1
6
PVCC1
1
IN2
Amp1
Buffer & Mute-2
IN3
12
Buffer & Mute-3
IN4
28
Buffer & Mute-4
8
+
BST1
C14
0.47µ
MUTE
Protector
(ASO, Surge, TSD)
21
Amp3
15
22
BSTSW
17
0.1µ 2.2
OUT1 –
OUT2 +
C3
13
25
CLKGEN
Amp4
26
BSTOUT
C13
100µ
19
+
18
BSTGND
INGND
14
20
+ C10
2.2µ
SP2
R4
0.1µ 2.2
OUT2 –
OUT3 +
C5
R5
PGND3 0.1µ 2.2
SP3
R6
0.1µ 2.2
OUT3 –
OUT4 +
C7
R7
PGND4 0.1µ 2.2
C8
27
SP4
R8
0.1µ 2.2
OUT4 –
TAB
* C1 to C8 should be polyester film capacitors with no secondary resonance (non-inductive),
to assure stable operation.
2
R3
PGND2 0.1µ 2.2
C6
23
SP1
R2
10
Booster
BST2
R1
PGND1 0.1µ 2.2
C4
9
R9 C12
7.5k 4.7µ
C1
C2
7
SW2
SW3
4
5
Amp2
VCC
OUT1 +
3
Buffer & Mute-1
11
+
24
PVCC2
2 STBY
IN1
C9
4400µ
Unit R: Ω
C: F
HA13156
Note: 1. Standby
Power is turned on when a signal of 3.5 V or 0.05 mA is impressed at pin 2.
When pin 2 is open or connected to GND, standby is turned on (output off).
5V
2
37.5 k
23.5 k
Q1 ON
↓
BIAS ON
2. Muting
Muting is turned off (output off) when a signal of 3.5 V or 0.2 mA is impressed at pin 10.
When pin 10 is open or connected to GND, muting is turned on (output off).
5V
10
25 k
Q2 ON
↓
MUTE ON
3. DC-DC converter (Booster)
DC-DC converter (Booster) in IC is turned on when a signal of 3.5 V over or 0.04 mA over is
impressed at pin 13, and get large max output power.
When pin 13 is open or connected to GND, DC-DC converter (Booster) is turned off.
This IC is generated noise, because built-in DC-DC converter (Booster).
Consequently if you use radio tuner (AM), I recommend DC-DC converter (Booster) off.
5V
13
30 k
20 k
Q3 ON
↓
Booster ON
3
HA13156
Absolute Maximum Ratings
Item
Symbol
Rating
Unit
VCC
18
V
VCC (DC)
26
V
VCC (PEAK)
50
V
I O (PEAK)
4
A
Power dissipation*
PT
83
W
Junction temperature
Tj
150
°C
Operating temperature
Topr
–30 to +85
°C
Storage temperature
Tstg
–55 to +125
°C
Operating supply voltage
1
Supply voltage when no signal*
2
Peak supply voltage*
3
Output current*
4
Note:
1.
2.
3.
4.
Tolerance within 30 seconds.
Tolerance in surge pulse waveform.
Value per 1 channel.
Value when attached on the infinite heat sink plate at Ta = 25 °C.
The derating carve is as shown in the graph below.
100
A: When heat sink is infinite (θj-a = 1.5°C/W)
B: When θf (thermal resistance of heat sink) = 3°C/W
(θj-a = 4.5°C/W)
Power dissipation PT (W)
83 W
A
50
28 W
B
0
25
50
85
Ambient temperature Ta
4
100
(°C)
150
HA13156
Electrical Characteristics (VCC = 13.2 V, RL = 4 Ω, f = 1 kHz, Rg = 600 Ω, Ta = 25°C,
when there is no description in test conditions)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Quiescent current1
IQ1
275
380
480
mA
Vin = 0 V, boost on, RL = ∞
Quiescent current2
IQ2
190
320
420
mA
Vin = 0 V, boost off, RL = ∞
Total harmonic distortion
T.H.D.
—
0.02
0.1
%
Po = 3 W, boost on, off
Gain
GV
30.5
32
33.5
dB
Gain difference between channels
∆GV
–1.0
0
1.0
dB
Rated output power1
PO1
20
23
—
W
VCC = 13.2 V, boost on,
RL = 4 Ω, THD = 10%
Rated output power2
PO2
17
20
—
W
VCC = 13.2 V, boost off,
RL = 4 Ω, THD = 10%
Max output power1
POMAX1
35
38
—
W
VCC = 13.7 V, boost on,
RL = 4 Ω
Max output power2
POMAX2
31
34
—
W
VCC = 13.7 V, boost off,
RL = 4 Ω
Output noise voltage1
WBN1
—
0.15
0.3
mVrms
Rg = 0 Ω, mute off,
BW = 20 to 20 kHz
Output noise voltage2
WBN2
—
0.08
0.2
mVrms
Rg = 0 Ω, mute on,
BW = 20 to 20 kHz
Ripple rejection
SVR
45
55
—
dB
f = 120 Hz
Output offset voltage1
∆VQ1
–250
0
250
mV
Vin = 0 V, mute off
Output offset voltage2
∆VQ2
–250
0
250
mV
Vin = 0 V, change value
of mute on → off
Standby current
IST
—
1
10
µA
boost off
Standby control voltage (high)
VSTH
3.5
—
VCC
V
Standby control voltage (low)
VSTL
0
—
1.5
V
Muting control voltage (high)
VMH
3.5
—
VCC
V
Muting control voltage (low)
VML
0
—
1.5
V
Boost control voltage (high)
VBH
3.5
—
VCC
V
Boost control voltage (low)
VBL
0
—
1.5
V
Muting attenuation
ATTM
70
90
—
dB
Vout = 6.7 Vrms
Channel cross talk
C.T.
60
80
—
dB
Vout = 6.7 Vrms
Input impedance
Zin
18
25
33
kΩ
Input voltage muted completly
ATTin
7
—
—
Vp-p
Note: boost on; Boost control voltage (high),
mute on; Muting control voltage (low)
5
HA13156
Characteristic Curves
Quiescent current vs. Supply Voltage
Quiescent current IQ (mA)
400
RL = ∞
Booster ON
Booster OFF
300
200
100
0
0
8
10
12
14
16
18
20
Supply Voltage VCC (V)
Output Power vs. Supply Voltage
70
RL = 4 Ω, f = 1 kHz
N)
Output Power Po, Pomax (W)
60
O
er
st
oo
50
B
x(
)
FF
a
om
P
O
ter
s
o
Bo
N)
rO
e
ost
(
Bo
ax
%,
F)
0
m
1
OF
=
er
Po
t
D
s
oo
(TH
,B
Po
0%
1
D=
(TH
o
P
40
30
20
10
0
10
12
14
16
Supply Voltage VCC (V)
6
18
20
HA13156
Total Harmonic Distortion vs. Frequency (1)
Total Harmonic Distortion THD (%)
5
2
VCC = 13.2 V, RL = 4 Ω, Booster ON
Po = 1.5 W (Ch1–Ch4)
Po = 8 W (Ch1–Ch4)
1
0.5
0.2
0.1
0.05
0.02
0.01
20
50
100 200
500
1k
2k
5k
10k 20k
Frequency f (Hz)
Total Harmonic Distortion vs. Frequency (2)
Total Harmonic Distortion THD (%)
5
2
VCC = 13.2 V, RL = 4 Ω, Booster OFF
Po = 1.5 W (Ch1–Ch4)
Po = 8 W (Ch1–Ch4)
1
0.5
0.2
0.1
0.05
0.02
0.01
20
50
100 200
500
1k
2k
5k
10k 20k
Frequency f (Hz)
7
HA13156
Total Harmonic Distortion vs. Output Power (1)
10
VCC = 13.2 V, RL = 4 Ω, Booster ON
Total Harmonic Distortion THD (%)
5
f = 100 Hz (Ch1–Ch4)
f = 1 kHz (Ch1–Ch4)
f = 10 kHz (Ch1–Ch4)
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.01 0.02
0.05 0.1 0.2
0.5
1
2
5
10
20 30
Output Power Po (W)
Total Harmonic Distortion vs. Output Power (2)
10
VCC = 13.2 V, RL = 4 Ω, Booster OFF
Total Harmonic Distortion THD (%)
5
2
f = 100 Hz (Ch1–Ch4)
f = 1 kHz (Ch1–Ch4)
f = 10 kHz (Ch1–Ch4)
1
0.5
0.2
0.1
0.05
0.02
0.01
0.01 0.02
0.05 0.1 0.2
0.5
1
2
Output Power Po (W)
8
5
10
20
HA13156
Crosstalk vs. Frequency (1)
90
80
Crosstalk CT (dB)
70
60
50
40
30
20
10
20
VCC = 13.2 V, Vout = 6.7 Vrms,
Input Ch1, Booster ON
Ch2
Ch3
Ch4
50
100 200
500
1k
2k
5k
10k
5k
10k
Frequency f (Hz)
Crosstalk vs. Frequency (2)
90
80
Crosstalk CT (dB)
70
60
50
40
30
20
10
20
VCC = 13.2 V, Vout = 6.7 Vrms,
Input Ch1, Booster OFF
Ch2
Ch3
Ch4
50
100 200
500
1k
2k
Frequency f (Hz)
9
HA13156
Crosstalk vs. Frequency (3)
90
80
Crosstalk CT (dB)
70
60
50
40
30
20
10
20
VCC = 13.2 V, Vout = 6.7 Vrms,
Input Ch2, Booster ON
Ch1
Ch3
Ch4
50
100 200
500
1k
2k
5k
10k
5k
10k
Frequency f (Hz)
Crosstalk vs. Frequency (4)
90
80
Crosstalk CT (dB)
70
60
50
40
30
20
10
20
VCC = 13.2 V, Vout = 6.7 Vrms,
Input Ch2, Booster OFF
Ch1
Ch3
Ch4
50
100 200
500
1k
Frequency f (Hz)
10
2k
HA13156
Crosstalk vs. Frequency (5)
90
80
Crosstalk CT (dB)
70
60
50
40
30
20
10
20
VCC = 13.2 V, Vout = 6.7 Vrms,
Input Ch3, Booster ON
Ch1
Ch2
Ch4
50
100 200
500
1k
2k
5k
10k
5k
10k
Frequency f (Hz)
Crosstalk vs. Frequency (6)
90
80
Crosstalk CT (dB)
70
60
50
40
30
20
10
20
VCC = 13.2 V, Vout = 6.7 Vrms,
Input Ch3, Booster OFF
Ch1
Ch2
Ch4
50
100 200
500
1k
2k
Frequency f (Hz)
11
HA13156
Crosstalk vs. Frequency (7)
90
80
Crosstalk CT (dB)
70
60
50
40
30
20
10
20
VCC = 13.2 V, Vout = 6.7 Vrms,
Input Ch4, Booster ON
Ch1
Ch2
Ch3
50
100 200
500
1k
2k
5k
10k
5k
10k
Frequency f (Hz)
Crosstalk vs. Frequency (8)
90
80
Crosstalk CT (dB)
70
60
50
40
30
20
10
20
VCC = 13.2 V, Vout = 6.7 Vrms,
Input Ch4, Booster OFF
Ch1
Ch2
Ch3
50
100 200
500
1k
Frequency f (Hz)
12
2k
HA13156
Supply Voltage Rejection Ratio vs. Frequency (1)
Supply Voltage Rejection Ratio SVR (dB)
80
70
60
50
40
30
20
10
0
20
VCC = 13.2 V, RL = 4 Ω, Vripple = 0 dBm,
Booster ON, Rg = 620 Ω
Ch1
Ch2
Ch3
Ch4
50
100 200
500
1k
2k
5k
10k
Frequency f (Hz)
Supply Voltage Rejection Ratio vs. Frequency (2)
Supply Voltage Rejection Ratio SVR (dB)
80
70
60
50
40
30
20
10
0
20
VCC = 13.2 V, RL = 4 Ω, Vripple = 0 dBm,
Booster OFF, Rg = 620 Ω
Ch1
Ch2
Ch3
Ch4
50
100 200
500
1k
2k
5k
10k
Frequency f (Hz)
13
HA13156
Wide Band Noise vs. Signal Source Resistance (1)
5
Wide Band Noise WBN (mV)
2
VCC = 13.2 V, RL = 4 Ω,
Vin = 0, Booster ON
1
0.5
Mute OFF Ch1–Ch4
0.2
0.1
Mute ON Ch1–Ch4
0.05
0.02
0.01
20
50
100 200
500
1k
2k
5k
10k 20k
50k
Signal Source Resistance Rg (Ω)
Wide Band Noise vs. Signal Source Resistance (2)
5
Wide Band Noise WBN (mV)
2
VCC = 13.2 V, RL = 4 Ω,
Vin = 0, Booster OFF
1
0.5
0.2
Mute OFF Ch1–Ch4
0.1
Mute ON Ch1–Ch4
0.05
0.02
0.01
20
50
100 200
500
1k
2k
5k
10k 20k
Signal Source Resistance Rg (Ω)
14
50k
HA13156
Power Dissipation vs. Output Power
100
Power Dissipation PT (W)
50
RL = 4 Ω, f = 1 kHz, 1ch operation
Booster ON (Ch1–Ch4)
VCC = 13.2 V
Booster OFF (Ch1–Ch4)
Booster ON (Ch1–Ch4)
VCC = 16 V
Booster OFF (Ch1–Ch4)
20
10
5
2
1
0.02
0.05 0.1 0.2
0.5
1
2
5
10
20
Output Power Po (W)
Power Dissipation vs. Frequency
15
Booster ON (Ch1–Ch4)
Power Dissipation PT (W)
Booster OFF (Ch1–Ch4)
10
5
VCC = 13.2 V, RL = 4 Ω, Po = 10 W, 1ch operation
0
20
50
100 200
500
1k
2k
5k
10k 20k
Frequency f (Hz)
15
HA13156
Gain vs. Frequency
40
35
Gain GV (dB)
30
VCC = 13.2 V, RL = 4 Ω, VOUT = 0 dBm,
Booster ON and OFF
(Ch1–Ch4)
25
20
15
10
5
0
20
50 100 200 500 1k 2k
5k 10k 20k 50k 100k 200k 500k 1M
Frequency f (Hz)
16
HA13156
Package Dimensions
Unit: mm
30.18 ± 0.25
0.05
1.55 +– 0.1
2.79
4.32 ± 0.05
R1.84 ± 0.19
28
0.5 ± 0.10
1.0 Typ
0.06
0.40 +– 0.04
5.08 4.29
27.0 Typ
Hitachi Code
JEDEC Code
EIAJ Code
Weight
4.14 ± 0.33
1
17.78 ± 0.25
10.70 ± 0.12
3.80 ± 0.05
17.50 ± 0.13
4.50 ± 0.12
φ 3.80 ± 0.05
19.81
SP-28TA
—
—
—
17
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.