HAT2085T Silicon N Channel MOS FET High Speed Power Switching REJ03G0163-0500 Rev.5.00 Nov 27, 2007 Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8 <TTP-8DV> ) 5 6 7 8 D D D D 87 65 12 34 1, 2, 3 4 5, 6, 7, 8 4G Source Gate Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS Value 200 Unit V VGSS ID ±30 1.4 V A ID (pulse) Note 1 IDR 11.2 1.4 A A Pch Note 2 Tch Tstg 1.3 150 –55 to +150 W °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s REJ03G0163-0500 Rev.5.00 Nov 27, 2007 Page 1 of 6 HAT2085T Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body to drain diode forward voltage Symbol V (BR) DSS IGSS IDSS VGS (off) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd VDF Min 200 — — 3.0 — 1.0 — — — — — — — — — — — Typ — — — — 0.49 1.7 300 43 12 21 11 48 18 10 1.8 4.8 0.8 Max — ±0.1 1 4.5 0.64 — — — — — — — — — — — 1.2 Unit V µA µA V Ω S pF pF pF ns ns ns ns nC nC nC V Body to drain diode reverse recovery time trr — 65 — ns Note: 3. Pulse test REJ03G0163-0500 Rev.5.00 Nov 27, 2007 Page 2 of 6 Test Conditions ID = 10 mA, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 0.7 A, VGS = 10 V Note 3 ID = 0.7 A, VDS = 10 V Note 3 VDS = 25 V VGS = 0 f = 1 MHz VDD ≅ 100 V, ID = 0.7 A VGS = 10 V RL = 143 Ω Rg = 10 Ω VDD = 160 V VGS = 10 V ID = 1.4 A IF = 1.4 A, VGS = 0 Note 3 IF = 1.4 A, VGS = 0 diF/dt = 100 A/µs HAT2085T Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 100 ID (A) Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 1.5 10 µs 10 1 1 Drain Current Channel Dissipation Pch (W) 2.0 1.0 0.5 0 DC PW Op er 0.1 10 s = 10 µs m s at ion 0 m (P Operation in W ≤ No this area is 10 te s) 4 0.01 limited by RDS (on) Ta = 25°C 1shot pulse 0 50 100 150 Ambient Temperature 0.001 0.1 200 1 10 100 Drain to Source Voltage Ta (°C) 1000 VDS (V) Note 4: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) Typical Transfer Characteristics Typical Output Characteristics 8V Pulse Test VDS = 10 V Pulse Test 8 ID (A) 10 V 8 10 7V 6 6 6V 4 2 5V Drain Current Drain Current ID (A) 10 4 Tc = 75°C 2 25°C –25°C VGS = 4.5 V 0 0 0 4 8 12 Drain to Source Voltage 16 20 0 1.5 1.0 ID = 1.4 A 1.0 A 0.5 0.5 A 0 0 5 10 Gate to Source Voltage 15 20 VGS (V) REJ03G0163-0500 Rev.5.00 Nov 27, 2007 Page 3 of 6 6 8 10 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 4 Gate to Source Voltage VDS (V) 2.0 2 10 VGS = 10 V 5 Pulse Test 2 1 0.5 0.2 0.1 0.1 0.2 0.5 1 2 5 10 20 Drain Current ID (A) 50 100 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (Ω) HAT2085T 2.0 VGS = 10 V Pulse Test 1.5 ID = 1.4 A 1.0 0.5 A 0.5 0 –25 0 25 50 75 100 125 150 VDS = 10 V Pulse Test 5 25°C 2 75°C 1 0.5 0.2 0.1 0.1 0.2 1 2 5 Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 10 1000 500 Capacitance C (pF) 500 200 100 50 di / dt = 100 A / µs VGS = 0, Ta = 25°C 20 10 1 10 100 Reverse Drain Current Ciss 200 100 50 Coss 20 Crss 10 5 VGS = 0 f = 1 MHz 2 1 1000 0 20 300 12 200 VDD = 50 V 100 V 160 V VDS 100 8 4 VDD = 160 V 100 V 50 V 0 0 0 4 8 Gate Charge 12 16 Qg (nc) REJ03G0163-0500 Rev.5.00 Nov 27, 2007 Page 4 of 6 80 100 20 1000 Switching Time t (ns) VGS VGS (V) 16 ID = 2 A 60 Switching Characteristics Gate to Source Voltage 400 40 Drain to Source Voltage VDS (V) IDR (A) Dynamic Input Characteristics VDS (V) 0.5 Drain Current ID (A) Tc 1000 Drain to Source Voltage Tc = –25°C (°C) Case Temperature Reverse Recovery Time trr (ns) 10 VGS = 10 V, VDD = 100 V PW = 5 µs, duty ≤ 1 % 300 Rg = 10 Ω tf 100 tr td(off) td(on) 30 10 tf tr 3 1 0.1 0.2 0.5 1 2 Drain Current 5 ID (A) 10 20 HAT2085T Gate to Source Cutoff Voltage VGS (off) (V) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 10 Pulse Test 8 6 4 10 V 2 VGS = 0 5V 0 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 Gate to Source Cutoff Voltage vs. Case Temperature 5 ID = 10 mA 4 1 mA 3 0.1 mA 2 1 VDS = 10 V 0 –25 0 25 50 75 Case Temperature VSD (V) 100 125 150 Tc (°C) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 1 D=1 0.5 0.2 0.1 0.1 θch – f (t) = γ s (t) • θch – f θch – f = 139°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) 0.05 0.01 0.02 0.01 D= PDM 0.001 t ho pu lse PW T 1s 0.0001 10 µ PW T 100 µ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (s) Switching Time Test Circuit 90% Vout Monitor Vin Monitor 10 Ω Switching Time Waveform D.U.T. Vin Vout Vin 10 V 10% RL VDD = 100 V 10% 90% td(on) REJ03G0163-0500 Rev.5.00 Nov 27, 2007 Page 5 of 6 10% tr 90% td(off) tf HAT2085T Package Dimensions Package Name TSSOP-8 JEITA Package Code P-TSSOP8-4.4 × 3-0.65 RENESAS Code PTSP0008JB-B 8 MASS[Typ.] 0.037g F *1 D Previous Code TTP-8DV 5 c Index mark HE *2 E bp 4 1 Z Terminal cross section *3 b p (Ni/Pd/Au plating) x M e NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Reference Symbol A1 A L1 L y HE e x y Z L L1 Detail F Ordering Information Part No. HAT2085T-EL-E Quantity 3000 pcs REJ03G0163-0500 Rev.5.00 Nov 27, 2007 Page 6 of 6 Shipping Container Taping D E A2 A1 A bp b1 c c1 Dimension in Millimeters Min Nom Max 3.00 3.30 4.40 0.03 0.07 0.10 1.10 0.15 0.20 0.25 0.10 0.15 0.20 0° 8° 6.20 6.40 6.60 0.65 0.13 0.10 0.805 0.40 0.50 0.60 1.0 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. 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