HAT3005R Silicon N/P Channel Power MOS FET High Speed Power Switching REJ03G0366-0300 Rev.3.00 Jun. 10, 2005 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8<FP-8DAV>) 8 7 8 D D 5 6 D D 5 7 6 1 4 23 2 G 4 G S1 S3 Nch Pch 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2 Pch Note3 Tch Tstg Nch 150 ±15 0.5 2 0.5 Pch –150 ±15 –0.25 –1 –0.25 1 1.5 150 –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) 3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) Rev.3.00, Jun. 10, 2005, page 1 of 3 Unit V V A A A W W °C °C HAT3005R Electrical Characteristics • N channel (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test tf VDF trr Min 150 ±15 — — 1.0 — — — 0.56 — — — — — — Typ — — — — — 1.6 1.9 2.4 0.86 95 42 11 9 16 18 Max — — ±10 5 2.1 2.2 2.7 5.5 — — — — — — — Unit V V µA µA V Ω Ω Ω S pF pF pF ns ns ns — — — 14 0.9 90 — 1.4 — ns V ns Min –150 ±15 — — –1.0 — — — 0.29 — Typ — — — — — 5.0 6.0 7.0 0.45 92 Max — — ±10 –5 –2.0 6.2 7.5 10.0 — — Unit V V µA µA V Ω Ω Ω S pF — — — — — — — — 37 10 10 13 22 15 –0.9 80 — — — — — — –1.4 — pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±12 V, VDS = 0 VDS = 150 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 0.5 A, VGS = 10 V Note4 ID = 0.5 A, VGS = 4 V Note4 ID = 2 A, VGS = 5 V Note4 ID = 0.5 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz VGS = 5 V, ID = 0.5 A, VDD ≅ 30 V IF = 0.5 A, VGS = 0 Note4 IF = 0.5 A, VGS = 0 diF/ dt = 50 A/µs • P channel (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) Forward transfer admittance Input capacitance RDS(on) |yfs| Ciss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Coss Crss td(on) tr td(off) tf VDF Body–drain diode reverse recovery time Notes: 5. Pulse test Rev.3.00, Jun. 10, 2005, page 2 of 3 trr Test Conditions ID = –10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±12 V, VDS = 0 VDS = –150 V, VGS = 0 VDS = –10V, ID = –1mA ID = –0.25 A, VGS = –10 VNote5 ID = –0.25 A, VGS = –4 V Note5 ID = –1 A, VGS = –5 V Note5 ID = –0.25 A, VDS = –10 V Note5 VDS = –10 V, VGS = 0, f = 1 MHz VGS = –5 V, ID = –0.25 A, VDD ≅ –30 V IF = –0.25 A, VGS = 0 Note5 IF = –0.25 A, VGS = 0 diF/ dt = 50 A/µs HAT3005R Package Dimensions JEITA Package Code RENESAS Code P-SOP8-3.95 × 4.9-1.27 PRSP0008DD-D Package Name FP-8DAV 0.085g F *1 D MASS[Typ.] bp 1 c *2 E Index mark HE 5 8 4 Z Terminal cross section (Ni/Pd/Au plating) *3 bp x M NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. e Reference Symbol L1 Dimension in Millimeters Min Nom Max D 4.90 5.3 E 3.95 A2 A1 0.10 0.14 0.25 0.34 0.40 0.46 0.15 0.20 0.25 1.75 A A bp A1 b1 c L c1 0° y HE Detail F 5.80 e 8° 6.10 6.20 1.27 x 0.25 y 0.1 Z 0.75 L L1 0.40 0.60 1.27 1.08 Ordering Information Part Name HAT3005R-EL-E Quantity 2500 pcs. Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00, Jun. 10, 2005, page 3 of 3 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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