2SK2788 Silicon N Channel MOS FET High Speed Power Switching REJ03G1033-0200 (Previous: ADE-208-538) Rev.2.00 Sep.07,2005 Features • Low on-resistance RDS(on) = 0.12 Ω typ (VGS = 10 V, ID = 1 A) • Low drive current • High speed switching • 4 V gate drive devices. Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 3 D 2 1 1. Gate 2. Drain 3. Source 4. Drain G 4 S Note: Marking is “VY” *UPAK is a trademark of Renesas Technology Corp. Rev.2.00 Sep. 07, 2005 page 1 of 6 2SK2788 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current ID Drain peak current ID(pulse)*1 Body to drain diode reverse drain current IDR Channel dissipation Pch*2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm) Ratings 60 ±20 2 4 2 1 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Notes: 3. Pulse test Rev.2.00 Sep. 07, 2005 page 2 of 6 Symbol V(BR)DSS V(BR)GSS Min 60 ±20 Typ — — Max — — Unit V V IDSS IGSS VGS(off) RDS(on) — — 1.0 — — 1.6 — — — — — — — — — — — — 0.12 0.16 2.8 180 90 30 9 15 40 35 0.9 35 10 ±10 2.0 0.16 0.25 — — — — — — — — — — µA µA V Ω Ω S pF pF pF ns ns ns ns V ns RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VDS = 60 V, VGS = 0 VGS = ±16 V, VDS = 0 ID = 1 mA, VDS = 10 V ID = 1 A, VGS = 10 V*3 ID = 1 A, VGS = 4 V*3 ID = 1 A, VDS = 10 V*3 VDS = 10 V, VGS = 0, f = 1 MHz VGS = 10 V, ID = 1 A, RL = 30 Ω ID = 2 A, VGS = 0 IF = 2 A, VGS = 0 diF/ dt = 50A/µs 2SK2788 Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 10 = s s (1 sh ot n tio ) c (T = 25 0.3 Operation in this area is 0.1 limited by RDS(on) m m ra °C ) 50 100 150 0.01 Ta = 25°C 0.1 0.3 1 200 3 10 Typical Output Characteristics Typical Transfer Characteristics 5 Drain Current ID (A) Pulse Test 3V 3 2 2.5 V 1 4 3 Tc = 75°C 2 –25°C 25°C 1 VDS = 10 V Pulse Test VGS = 2 V 2 4 6 8 0 10 2 4 6 8 10 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current Pulse Test 1.6 1.2 0.8 0.4 ID = 2 A 1A 2 4 6 8 10 Gate to Source Voltage VGS (V) Rev.2.00 Sep. 07, 2005 page 3 of 6 Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Voltage VDS (V) 2.0 0 100 Drain to Source Voltage VDS (V) 6V 5V 4V 10 V 4 3.5 V 0 30 Ambient Temperature Ta (°C) 5 Drain to Source Saturation Voltage VDS (on) (V) 1 10 0.03 0 Drain Current ID (A) 1 pe 0.5 PW O 1.0 3 C Drain Current ID (A) 1.5 100 µs Test condition : When using the alumina ceramic board (12.5 x 20 x 0.7 mm) D Channel Dissipation Pch (W) 2.0 5 Pulse Test 2 1 0.5 VGS = 4 V 0.2 0.1 0.05 0.1 10 V 0.3 1 3 10 30 Drain Current ID (A) 100 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (Ω) 2SK2788 0.5 Pulse Test 0.4 1A 2A 0.3 VGS = 4 V 0.2 1, 2 A 0.1 10 V 0 –40 0 40 80 120 160 25°C 2 75°C 1 0.5 0.2 0.1 0.1 VDS = 10 V Pulse Test 0.5 0.2 1 2 5 Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 10 1000 VGS = 0 f = 1 MHz 500 Capacitance C (pF) 200 100 50 20 10 100 0.2 1 5 Coss 50 Crss 0 10 10 20 30 40 Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 ID = 2 A VDD = 10 V 25 V 50 V 16 12 VDS VGS 40 20 0 2 100 Reverse Drain Current IDR (A) 80 60 0.5 Ciss 10 8 4 VDD = 50 V 25 V 10 V 2 4 6 8 Gate Charge Qg (nc) Rev.2.00 Sep. 07, 2005 page 4 of 6 0 10 50 100 Switching Time t (ns) 5 0.1 200 20 di / dt = 50 A / µs VGS = 0, Ta = 25°C Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) Tc = –25°C 5 Case Temperature TC (°C) 500 Drain to Source Voltage VDS (V) 10 td(off) 50 tf 20 tr td(on) 10 5 VGS = 10 V, VDD = 30 V PW = 5 µs, duty < 1 % 2 1 0.1 0.2 0.5 1 2 Drain Current ID (A) 5 10 2SK2788 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 10 8 6 10 V 4 5V VGS = 0, –5 V 2 Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 VSD (V) Switching Time Test Circuit Waveform 90% Vout Monitor Vin Monitor D.U.T. RL Vin Vout Vin 10 V 50 Ω VDD = 30 V 10% 10% 90% td(on) Rev.2.00 Sep. 07, 2005 page 5 of 6 10% tr 90% td(off) tf 2SK2788 Package Dimensions RENESAS Code Package Name MASS[Typ.] PLZZ0004CA-A UPAK / UPAKV 0.050g 1.5 1.5 3.0 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max (1.5) 0.44 Max (0.2) 0.53 Max 0.48 Max 0.8 Min φ1 0.4 4.5 ± 0.1 1.8 Max Unit: mm (2.5) SC-62 (0.4) JEITA Package Code Ordering Information Part Name 2SK2788VYTL-E 2SK2788VYTR-E Quantity 1000 pcs 1000 pcs Shipping Container Taping Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep. 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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