INTERSIL HFA1120EVAL

HFA1100, HFA1120
Data Sheet
May 1999
850MHz, Low Distortion Current Feedback
Operational Amplifiers
• Low Distortion (30MHz, HD2). . . . . . . . . . . . . . . . . -56dBc
• -3dB Bandwidth . . . . . . . . . . . . . . . . . . . . . . . . . . 850MHz
• Very Fast Slew Rate . . . . . . . . . . . . . . . . . . . . . . 2300V/µs
• Fast Settling Time (0.1%) . . . . . . . . . . . . . . . . . . . . . 11ns
• Excellent Gain Flatness
- (100MHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±0.14dB
- (50MHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±0.04dB
The HFA1100 is a basic op amp with uncommitted pins 1, 5,
and 8. The HFA1120 includes inverting input bias current
adjust pins (pins 1 and 5) for adjusting the output offset
voltage.
• High Output Current . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
• Overdrive Recovery . . . . . . . . . . . . . . . . . . . . . . . . <10ns
These devices offer a significant performance improvement
over the AD811, AD9617/18, the CLC400-409, and the
EL2070, EL2073, EL2030.
• Operates with 5V Single Supply (See AN9745)
Applications
For Military grade product refer to the HFA1100/883,
HFA1120/883 data sheet.
• Video Switching and Routing
• Pulse and Video Amplifiers
Ordering Information
TEMP.
RANGE (oC)
• RF/IF Signal Processing
PACKAGE
PKG. NO.
• Flash A/D Driver
HFA1100IP
-40 to 85
8 Ld PDIP
E8.3
• Medical Imaging Systems
HFA1100IB
(H1100I)
-40 to 85
8 Ld SOIC
M8.15
HFA1120IB
(H1120I)
-40 to 85
8 Ld SOIC
M8.15
• Related Literature
- AN9420, Current Feedback Theory
- AN9202, HFA11XX Evaluation Fixture
- AN9745, Single 5V Supply Operation
HFA11XXEVAL
2945.7
Features
The HFA1100, 1120 are a family of high-speed, wideband,
fast settling current feedback amplifiers built with Intersil's
proprietary complementary bipolar UHF-1 process. Both
amplifiers operate with single supply voltages as low as 4.5V
(see Application Information section).
PART NUMBER
(BRAND)
File Number
DIP Evaluation Board for High-Speed Op Amps
Pinouts
The Op Amps with Fastest Edges
HFA1100
(PDIP, SOIC)
TOP VIEW
INPUT
220MHz
SIGNAL
OUTPUT
(AV = 2)
HFA1130
OP AMP
0ns
NC
1
-IN
2
+IN
3
V-
4
NC
-
7
V+
+
6
OUT
5
NC
HFA1120
(SOIC)
TOP VIEW
25ns
BAL
1
-IN
2
-
7 V+
3
+
6 OUT
+IN
V- 4
1
8
8 NC
5 BAL
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
HFA1100, HFA1120
Absolute Maximum Ratings
TA = 25oC
Thermal Information
Thermal Resistance (Typical, Note 1)
θJA (oC/W) θJC (oC/W)
PDIP Package . . . . . . . . . . . . . . . . . . .
130
N/A
SOIC Package . . . . . . . . . . . . . . . . . . .
170
N/A
Maximum Junction Temperature (Plastic Package) . . . . . . . . .150oC
Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VSUPPLY
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Output Current (50% Duty Cycle) . . . . . . . . . . . . . . . . . . . . . . 60mA
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
VSUPPLY = ±5V, AV = +1, RF = 510Ω, RL = 100Ω, Unless Otherwise Specified
Electrical Specifications
(NOTE 2)
TEST
LEVEL
TEMP.
(oC)
MIN
TYP
MAX
UNITS
A
25
-
2
6
mV
A
Full
-
-
10
mV
C
Full
-
10
-
µV/oC
A
25
40
46
-
dB
A
Full
38
-
-
dB
A
25
45
50
-
dB
A
Full
42
-
-
dB
A
25
-
25
40
µA
A
Full
-
-
65
µA
C
Full
-
40
-
nA/oC
A
25
-
20
40
µA/V
A
Full
-
-
50
µA/V
A
25
-
12
50
µA
A
Full
-
-
60
µA
C
Full
-
40
-
nA/oC
A
25
-
1
7
µA/V
A
Full
-
-
10
µA/V
A
25
-
6
15
µA/V
A
Full
-
-
27
µA/V
-IBIAS Adj. Range (HFA1120)
A
25
±100
±200
-
µA
Non-Inverting Input Resistance
A
25
25
50
-
kΩ
Inverting Input Resistance
C
25
-
20
30
Ω
Input Capacitance (Either Input)
B
25
-
2
-
pF
Input Common Mode Range
C
Full
±2.5
±3.0
-
V
TEST
CONDITIONS
PARAMETER
INPUT CHARACTERISTICS
Input Offset Voltage (Note 3)
Input Offset Voltage Drift
∆VCM = ±2V
VIO CMRR
∆VS = ±1.25V
VIO PSRR
Non-Inverting Input Bias Current
(Note 3)
+IN = 0V
+IBIAS Drift
∆VCM = ±2V
+IBIAS CMS
Inverting Input Bias Current (Note 3)
-IN = 0V
-IBIAS Drift
∆VCM = ±2V
-IBIAS CMS
∆VS = ±1.25V
-IBIAS PSS
Input Noise Voltage (Note 3)
100kHz
B
25
-
4
-
nV/√Hz
+Input Noise Current (Note 3)
100kHz
B
25
-
18
-
pA/√Hz
-Input Noise Current (Note 3)
100kHz
B
25
-
21
-
pA/√Hz
2
HFA1100, HFA1120
VSUPPLY = ±5V, AV = +1, RF = 510Ω, RL = 100Ω, Unless Otherwise Specified (Continued)
Electrical Specifications
TEST
CONDITIONS
PARAMETER
TRANSFER CHARACTERISTICS
(NOTE 2)
TEST
LEVEL
TEMP.
(oC)
MIN
TYP
MAX
UNITS
B
25
-
300
-
kΩ
AV = +2, Unless Otherwise Specified
Open Loop Transimpedance (Note 3)
-3dB Bandwidth (Note 3)
VOUT = 0.2VP-P,
AV = +1
B
25
530
850
-
MHz
-3dB Bandwidth
VOUT = 0.2VP-P,
AV = +2, RF = 360Ω
B
25
-
670
-
MHz
Full Power Bandwidth
VOUT = 4VP-P,
AV = -1
B
25
-
300
-
MHz
Gain Flatness (Note 3)
To 100MHz
B
25
-
±0.14
-
dB
Gain Flatness
To 50MHz
B
25
-
±0.04
-
dB
Gain Flatness
To 30MHz
B
25
-
±0.01
-
dB
Linear Phase Deviation (Note 3)
DC to 100MHz
B
25
-
0.6
-
Degrees
Differential Gain
NTSC, RL = 75Ω
B
25
-
0.03
-
%
Differential Phase
NTSC, RL = 75Ω
B
25
-
0.05
-
Degrees
A
Full
1
-
-
V/V
A
25
±3.0
±3.3
-
V
A
Full
±2.5
±3.0
-
V
A
25, 85
50
60
-
mA
A
-40
35
50
-
mA
B
25
-
0.07
-
Ω
Minimum Stable Gain
OUTPUT CHARACTERISTICS AV = +2, Unless Otherwise Specified
AV = -1
Output Voltage (Note 3)
RL = 50Ω, AV = -1
Output Current
DC Closed Loop Output Impedance
(Note 3)
2nd Harmonic Distortion (Note 3)
30MHz, VOUT = 2VP-P
B
25
-
-56
-
dBc
3rd Harmonic Distortion (Note 3)
30MHz, VOUT = 2VP-P
B
25
-
-80
-
dBc
3rd Order Intercept (Note 3)
100MHz
B
25
20
30
-
dBm
1dB Compression
100MHz
B
25
15
20
-
dBm
TRANSIENT RESPONSE
AV = +2, Unless Otherwise Specified
Rise Time
VOUT = 2.0V Step
B
25
-
900
-
ps
Overshoot (Note 3)
VOUT = 2.0V Step
B
25
-
10
-
%
Slew Rate
AV = +1, VOUT = 5VP-P
B
25
-
1400
-
V/µs
Slew Rate
AV = +2, VOUT = 5VP-P
B
25
1850
2300
-
V/µs
0.1% Settling (Note 3)
VOUT = 2V to 0V
B
25
-
11
-
ns
0.2% Settling (Note 3)
VOUT = 2V to 0V
B
25
-
7
-
ns
Overdrive Recovery Time
2X Overdrive
B
25
-
7.5
10
ns
Supply Voltage Range
B
Full
±4.5
-
±5.5
V
Supply Current (Note 3)
A
25
-
21
26
mA
A
Full
-
-
33
mA
POWER SUPPLY CHARACTERISTICS
NOTES:
2. Test Level: A. Production Tested; B. Typical or Guaranteed Limit Based on Characterization; C. Design Typical for Information Only.
3. See Typical Performance Curves for more information.
3
HFA1100, HFA1120
Application Information
PARAMETER
Optimum Feedback Resistor (RF)
The enclosed plots of inverting and non-inverting frequency
response detail the performance of the HFA1100/1120 in
various gains. Although the bandwidth dependency on ACL
isn’t as severe as that of a voltage feedback amplifier, there is
an appreciable decrease in bandwidth at higher gains. This
decrease can be minimized by taking advantage of the
current feedback amplifier’s unique relationship between
bandwidth and RF. All current feedback amplifiers require a
feedback resistor, even for unity gain applications, and the RF,
in conjunction with the internal compensation capacitor, sets
the dominant pole of the frequency response. Thus, the
amplifier’s bandwidth is inversely proportional to RF. The
HFA1100, 1120 designs are optimized for a 510Ω RF, at a
gain of +1. Decreasing RF in a unity gain application
decreases stability, resulting in excessive peaking and
overshoot (Note: Capacitive feedback causes the same
problems due to the feedback impedance decrease at higher
frequencies). At higher gains the amplifier is more stable, so
RF can be decreased in a trade-off of stability for bandwidth.
The table below lists recommended RF values for various
gains, and the expected bandwidth.
ACL
RF (Ω)
BW (MHz)
+1
510
850
-1
430
580
+2
360
670
+5
150
520
+10
180
240
+19
270
125
Offset Adjustment
The HFA1120 allows for adjustment of the inverting input
bias current to null the output offset voltage. -IBIAS flows
through RF, so any change in bias current forces a
corresponding change in output voltage. The amount of
adjustment is a function of RF. With RF = 510Ω, the typical
adjust range is ±100mV. For offset adjustment connect a
10kΩ potentiometer between pins 1 and 5 with the wiper
connected to V-.
5V Single Supply Operation
These amplifiers will operate at single supply voltages down
to 4.5V. The table below details the amplifier’s performance
with a single 5V supply. The dramatic supply current
reduction at this operating condition (refer also to Figure 23)
makes these op amps even better choices for low power 5V
systems. Refer to Application Note AN9745 for further
information.
4
TYP
Input Common Mode Range
1V to 4V
-3dB BW (AV = +2)
267MHz
Gain Flatness (to 50MHz, AV = +2)
0.05dB
Output Voltage (AV = -1)
1.3V to 3.8V
Slew Rate (AV = +2)
475V/µs
0.1% Settling Time
17ns
Supply Current
5.5mA
Use of Die in Hybrid Applications
These amplifiers are designed with compensation to negate
the package parasitics that typically lead to instabilities. As a
result, the use of die in hybrid applications results in
overcompensated performance due to lower parasitic
capacitances. Reducing RF below the recommended values
for packaged units will solve the problem. For AV = +2 the
recommended starting point is 300Ω, while unity gain
applications should try 400Ω.
PC Board Layout
The frequency performance of these amplifiers depends a
great deal on the amount of care taken in designing the PC
board. The use of low inductance components such as
chip resistors and chip capacitors is strongly
recommended, while a solid ground plane is a must!
Attention should be given to decoupling the power supplies.
A large value (10µF) tantalum in parallel with a small value
chip (0.1µF) capacitor works well in most cases.
Terminated microstrip signal lines are recommended at the
input and output of the device. Output capacitance, such as
that resulting from an improperly terminated transmission
line will degrade the frequency response of the amplifier and
may cause oscillations. In most cases, the oscillation can be
avoided by placing a resistor in series with the output.
Care must also be taken to minimize the capacitance to ground
seen by the amplifier’s inverting input. The larger this
capacitance, the worse the gain peaking, resulting in pulse
overshoot and possible instability. To this end, it is
recommended that the ground plane be removed under traces
connected to pin 2, and connections to pin 2 should be kept as
short as possible.
An example of a good high frequency layout is the
Evaluation Board shown below.
Evaluation Board
An evaluation board is available for the HFA1100 (Part
Number HFA11XXEVAL). Please contact your local sales
office for information.
HFA1100, HFA1120
The layout and schematic of the board are shown below:
500Ω
500Ω
50Ω
VH
1
8
2
7
0.1µF
10µF
+5V
50Ω
IN
10µF
3
6
4
5
OUT
VL
0.1µF
GND
GND
-5V
TOP LAYOUT
BOTTOM LAYOUT
VH
1
+IN
VL
OUT
V+
VGND
Typical Performance Curves
AV = +2
1.2
90
AV = +2
0.9
OUTPUT VOLTAGE (V)
60
30
0
-30
-60
0.6
0.3
0
-0.3
-0.6
-90
-0.9
-120
-1.2
TIME (5ns/DIV.)
TIME (5ns/DIV.)
NORMALIZED GAIN (dB)
FIGURE 2. LARGE SIGNAL PULSE
VOUT = 200mVP-P
0
GAIN
-3
AV = +1
-6
AV = +2
-9
AV = +6
AV = +11
-12
PHASE
0
AV = +1
AV = +2
-180
AV = +6
-270
AV = +11
0.3
1
-90
10
100
FREQUENCY (MHz)
-360
1K
FIGURE 3. NON-INVERTING FREQUENCY RESPONSE
5
VOUT = 200mVP-P
0
GAIN
-3
AV = -1
-6
AV = -5
AV = -10
-9
AV = -20
-12
PHASE (DEGREES)
NORMALIZED GAIN (dB)
FIGURE 1. SMALL SIGNAL PULSE
PHASE
180
AV = -1
90
AV = -5
0
AV = -10
AV = -20
0.3
1
10
100
FREQUENCY (MHz)
-90
-180
1K
FIGURE 4. INVERTING FREQUENCY RESPONSE
PHASE (DEGREES)
OUTPUT VOLTAGE (mV)
120
VSUPPLY = ±5V, RF = 510Ω, TA = 25oC, RL = 100Ω, Unless Otherwise Specified
HFA1100, HFA1120
RL = 1kΩ
3
GAIN
0
-3
-6
RL = 50Ω
RL = 100Ω
PHASE
0
-90
RL = 1kΩ
-180
RL = 100Ω
-270
RL = 1kΩ
0.3
1
10
100
FREQUENCY (MHz)
1K
-360
PHASE (DEGREES)
RL = 100Ω
RL = 50Ω
GAIN (dB)
10
0
0.160VP-P
0.500VP-P
0.920VP-P
1.63VP-P
-20
-30
0.3
1
10
100
FREQUENCY (MHz)
RL = 100Ω
RL = 50Ω
-6
PHASE
RL = 50Ω
RL = 100Ω
20
0
-90
RL = 1kΩ
-180
-270
1
-360
10
100
FREQUENCY (MHz)
1K
AV = +2
10
0
0.32VP-P
-10
1.00VP-P
-20
1.84VP-P
-30
0.3
3.26VP-P
1
10
100
FREQUENCY (MHz)
1K
FIGURE 8. FREQUENCY RESPONSE FOR VARIOUS OUTPUT
VOLTAGES
AV = +1
AV = +6
10
950
0
-10
BANDWIDTH (MHz)
NORMALIZED GAIN (dB)
-3
FIGURE 6. FREQUENCY RESPONSE FOR VARIOUS LOAD
RESISTORS
1K
FIGURE 7. FREQUENCY RESPONSE FOR VARIOUS OUTPUT
VOLTAGES
20
GAIN
0
RL = 100Ω
RL = 1kΩ
NORMALIZED GAIN (dB)
AV = +1
-10
RL = 1kΩ
3
0.3
FIGURE 5. FREQUENCY RESPONSE FOR VARIOUS LOAD
RESISTORS
20
AV = +2, VOUT = 200mVP-P
0.96VP-P
TO
3.89VP-P
-20
-30
900
850
800
750
700
0.3
1
10
100
FREQUENCY (MHz)
1K
FIGURE 9. FREQUENCY RESPONSE FOR VARIOUS OUTPUT
VOLTAGES
6
PHASE (DEGREES)
AV = +1, VOUT = 200mVP-P
6
GAIN (dB)
VSUPPLY = ±5V, RF = 510Ω, TA = 25oC, RL = 100Ω, Unless Otherwise Specified (Continued)
NORMALIZED GAIN (dB)
Typical Performance Curves
-50
-25
0
25
50
75
100
125
TEMPERATURE (oC)
FIGURE 10. -3dB BANDWIDTH vs TEMPERATURE
HFA1100, HFA1120
Typical Performance Curves
VSUPPLY = ±5V, RF = 510Ω, TA = 25oC, RL = 100Ω, Unless Otherwise Specified (Continued)
25
0
2.5
180
135
PHASE
0.25
90
45
0
0.01
0.1
1
10
FREQUENCY (MHz)
100
GAIN (dB)
GAIN
PHASE (DEGREES)
GAIN (kΩ)
AV = +2
AV = -1
250
-0.05
-0.10
-0.15
-0.20
500
1
10
FREQUENCY (MHz)
FIGURE 11. OPEN LOOP TRANSIMPEDANCE
FIGURE 12. GAIN FLATNESS
AV = +2, VOUT = 2V
AV = +2
2.0
0.6
SETTLING ERROR (%)
1.5
DEVIATION (DEGREES)
100
1.0
0.5
0
-0.5
-1.0
-1.5
0.4
0.2
0
-0.2
-0.4
-0.6
-2.0
0
15
30
45
60
75
90 105 120
FREQUENCY (MHz)
135
150
-4
FIGURE 13. DEVIATION FROM LINEAR PHASE
1
6
11
16
21
26
TIME (ns)
31
36
41
46
FIGURE 14. SETTLING RESPONSE
40
2-TONE
35
INTERCEPT POINT (dBm)
OUTPUT RESISTANCE (Ω)
1000
100
10
1
30
25
20
15
10
5
0.1
0
0.3
1
10
100
FREQUENCY (MHz)
1000
FIGURE 15. CLOSED LOOP OUTPUT RESISTANCE
7
0
100
200
300
FREQUENCY (MHz)
400
FIGURE 16. 3rd ORDER INTERMODULATION INTERCEPT
HFA1100, HFA1120
VSUPPLY = ±5V, RF = 510Ω, TA = 25oC, RL = 100Ω, Unless Otherwise Specified (Continued)
-30
-30
-35
-40
-40
DISTORTION (dBc)
DISTORTION (dBc)
Typical Performance Curves
100MHz
-45
50MHz
-50
-55
-60
-50
100MHz
-60
-70
-90
30MHz
-110
-70
-5
-3
-1
1
3
5
7
9
OUTPUT POWER (dBm)
11
13
-5
15
-3
-1
3
5
7
9
11
13
15
FIGURE 18. 3rd HARMONIC DISTORTION vs POUT
35
RF = 360Ω
VOUT = 2VP-P
AV = +1
30
AV = +2
OVERSHOOT (%)
VOUT = 1VP-P
VOUT = 0.5VP-P
VOUT = 2VP-P
25
RF = 360Ω
VOUT = 1VP-P
RF = 360Ω
20 VOUT = 0.5VP-P
15
10
5
RF = 510Ω
VOUT = 2VP-P
RF = 510Ω
VOUT = 1VP-P
RF = 510Ω
VOUT = 0.5VP-P
0
100
200
300
400
500
600
700
800
100
900 1000
200
300
FIGURE 19. OVERSHOOT vs INPUT RISE TIME
36
34
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
400
500
600
700
800
900 1000
INPUT RISE TIME (ps)
INPUT RISE TIME (ps)
FIGURE 20. OVERSHOOT vs INPUT RISE TIME
25
AV = +2, tR = 200ps, VOUT = 2VP-P
24
SUPPLY CURRENT (mA)
OVERSHOOT (%)
1
OUTPUT POWER (dBm)
FIGURE 17. 2nd HARMONIC DISTORTION vs POUT
OVERSHOOT (%)
30MHz
-100
-65
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
8
6
50MHz
-80
23
22
21
20
19
18
360
400
440
480
560
600
520
FEEDBACK RESISTOR (Ω)
640
680
FIGURE 21. OVERSHOOT vs FEEDBACK RESISTOR
8
-60
-40
-20
0
20
40
60
80
100 120
TEMPERATURE (oC)
FIGURE 22. SUPPLY CURRENT vs TEMPERATURE
HFA1100, HFA1120
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
6
5
7
8
2.8
2.7
2.6
2.5
2.4
2.3
2.2
2.1
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
+IBIAS
VIO
-IBIAS
-60
10
9
45
42
39
36
33
30
27
24
21
18
15
12
9
6
3
0
-40
-20
0
20
40
60
80
BIAS CURRENTS (µA)
VSUPPLY = ±5V, RF = 510Ω, TA = 25oC, RL = 100Ω, Unless Otherwise Specified (Continued)
INPUT OFFSET VOLTAGE (mV)
SUPPLY CURRENT (mA)
Typical Performance Curves
100 120
TEMPERATURE (oC)
TOTAL SUPPLY VOLTAGE (V+ - V-, V)
FIGURE 23. SUPPLY CURRENT vs SUPPLY VOLTAGE
FIGURE 24. VIO AND BIAS CURRENTS vs TEMPERATURE
3.7
30
AV = -1, RL = 50Ω
+VOUT
3.3
3.2
| - VOUT |
3.1
3
2.9
2.8
2.7
25
250
225
20
200
175
15
150
125
10
100
75
5
Eeni
NI
IiniNI Iini+
NI+
2.6
2.5
-60
-40
-20
0
20
40
60
80
100
120
TEMPERATURE (oC)
FIGURE 25. OUTPUT VOLTAGE vs TEMPERATURE
9
0
100
1K
10K
100K
FREQUENCY (Hz)
FIGURE 26. INPUT NOISE vs FREQUENCY
50
25
0
CURRENT NOISE (pA/√Hz)
3.4
300
275
3.5
VOLTAGE NOISE (nV/√Hz)
OUTPUT VOLTAGE (V)
3.6
HFA1100, HFA1120
Die Characteristics
DIE DIMENSIONS:
PASSIVATION:
63 mils x 44 mils x 19 mils
1600µm x 1130µm
Type: Nitride
Thickness: 4kÅ ±0.5kÅ
TRANSISTOR COUNT:
METALLIZATION:
52
Type: Metal 1: AlCu (2%)/TiW
Thickness: Metal 1: 8kÅ ±0.4kÅ
Type: Metal 2: AlCu (2%)
Thickness: Metal 2: 16kÅ ±0.8kÅ
SUBSTRATE POTENTIAL (POWERED UP):
Floating (Recommend Connection to V-)
Metallization Mask Layout
HFA1100, HFA1120
+IN
-IN
V-
BAL
VL
VH
BAL
V+
OUT
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
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