BVDSS = 500 V RDS(on) typ = 0.58 Ω HFW9N50 / HFI9N50 ID = 9.0 A 500V N-Channel MOSFET D2-PAK I2-PAK HFW9N50 HFI9N50 FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.58 Ω (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol TC=25℃ unless otherwise specified Parameter Value Units 500 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 9.0 A Drain Current – Continuous (TC = 100℃) 5.7 A IDM Drain Current – Pulsed 36 A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 360 mJ IAR Avalanche Current (Note 1) 9.0 A EAR Repetitive Avalanche Energy (Note 1) 14.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TA = 25℃) * 3.13 W Power Dissipation (TC = 25℃) - Derate above 25℃ 147 W 1.18 W/℃ -55 to +150 ℃ 300 ℃ (Note 1) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics Typ. Max. RθJC Symbol Junction-to-Case Parameter -- 0.85 RθJA Junction-to-Ambient* -- 40 RθJA Junction-to-Ambient -- 62.5 Units ℃/W * When mounted on the minimum pad size recommended (PCB Mount) ◎ SEMIHOW REV.A0 June 2005 HFW9N50_HFI9N50 June 2005 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.5 -- 4.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 4.5 A -- 0.58 0.73 Ω VGS = 0 V, ID = 250 ㎂ 500 -- -- V ID = 250 ㎂, Referenced to25℃ -- 0.55 -- V/℃ VDS = 500 V, VGS = 0 V -- -- 1 ㎂ VDS = 400 V, TC = 125℃ -- -- 10 ㎂ Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 ㎁ IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 ㎁ -- 1300 1700 ㎊ -- 150 195 ㎊ -- 24 31 ㎊ -- 35 70 ㎱ -- 120 240 ㎱ -- 70 140 ㎱ -- 80 160 ㎱ -- 35 45 nC -- 7.3 -- nC -- 17 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 250 V, ID = 9.0 A, RG = 25 Ω (Note 4,5) VDS = 400V, ID = 9.0 A, VGS = 10 V (Note 4,5) Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 9.0 ISM Pulsed Source-Drain Diode Forward Current -- -- 36 VSD Source-Drain Diode Forward Voltage IS = 9.0 A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time -- 320 -- ㎱ Qrr Reverse Recovery Charge IS = 9.0 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 2.8 -- μC A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=8mH, IAS=9.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤9.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0 June 2005 HFW9N50_HFI9N50 Electrical Characteristics TC=25 °C HFW9N50_HFI9N50 Typical Characteristics VGS 15 V 10 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : 1 10 ID , Drain Current [A] ID , Drain Current [A] 101 100 150 ℃ 25℃ 0 10 -55 ℃ ※ Note 1. VDS = 40V 2. 250μ s Pulse Test ※ Note : 1. 250μ s Pulse Test 2. TC = 25 ℃ -1 -1 10 -1 100 10 10 101 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS , Drain-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics IDR , Reverse Drain Current [A] 1.6 VGS = 10V 1.4 VGS = 20V 1.2 1.0 0.8 0.6 0.4 0 10 150 ℃ ※ Note : 1. VGS = 0V 2. 250μ s Pulse Test 25℃ ※ Note : TJ = 25 ℃ -1 0 5 10 15 20 25 30 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID , Drain Current [A] VSD , Source-Drain Voltage [V] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 2400 Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1800 Capacitances [pF] 1 10 Coss 1200 600 ※ Note ; 1. VGS = 0 V 2. f = 1 MHz Crss VDS = 100V VGS, Gate-Source Voltage [V] RDS(on) , [Ω] Drain-Source On-Resistance 1.8 10 VDS = 250V VDS = 400V 8 6 4 2 ※ Note : ID = 9.0 A 0 -1 10 0 0 10 1 10 0 5 10 15 20 25 30 35 40 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0 June 2005 (continued) 1.2 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage HFW9N50_HFI9N50 Typical Characteristics 1.1 1.0 ※ Note : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Note : 1. VGS = 10 V 2. ID = 4.5 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 10 2 Operation in This Area is Limited by R DS(on) 10 ID, Drain Current [A] 1 ms 1 10 10 ms DC 0 10 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 10 6 4 2 0 25 -1 10 1 2 10 3 10 10 50 75 100 125 150 TC, Case Temperature [ ℃] VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 0 10 D=0.5 Zθ JC(t), Thermal Response ID, Drain Current [A] 8 100 µs 10 µs 0.2 -1 10 ※ Notes : 1. Zθ JC(t) = 0.85 ℃/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Zθ JC(t) 0.1 0.05 PDM 0.02 0.01 t1 single pulse -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 t2 0 10 1 10 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0 June 2005 HFW9N50_HFI9N50 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A0 June 2005 HFW9N50_HFI9N50 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0 June 2005 HFW9N50_HFI9N50 Package Dimension ◎ SEMIHOW REV.A0 June 2005 HFW9N50_HFI9N50 Package Dimension ◎ SEMIHOW REV.A0 June 2005