HGTP2N120BND, HGT1S2N120BNDS Data Sheet January 2000 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49312. The Diode used is the development type TA49056. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. • 12A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 160ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Thermal Impedance SPICE Model www.intersil.com • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC TO-220AB (ALTERNATE VERSION) Ordering Information E PACKAGE 4698.2 Features Formerly Developmental Type TA49310. PART NUMBER File Number COLLECTOR (FLANGE) BRAND HGTP2N120BND TO-220AB 2N120BND HGT1S2N120BNDS TO-263AB 2N120BND C G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in Tape and Reel, i.e., HGT1S2N120BNDS9A. JEDEC TO-263AB Symbol C COLLECTOR (FLANGE) G G E E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 1 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 HGTP2N120BND, HGT1S2N120BNDS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTP2N120BND HGT1S2N120BNDS UNITS 1200 V At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 12 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 5.6 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM 20 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . .SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A at 1200V 104 W 0.83 W/oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL 300 oC Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 260 oC Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 8 µs Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 15 µs Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous Maximum Lead Temperature for Soldering CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 840V, TJ = 125oC, RG = 51Ω. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage BVCES ICES VCE(SAT) VGE(TH) TEST CONDITIONS MIN TYP MAX UNITS 1200 - - V TC = 25oC - - 250 µA TC = 125oC - 50 - µA TC = 150oC - - 0.6 mA TC = 25oC - 2.45 2.7 V TC = 150oC - 3.6 4.2 V 6.0 6.8 - V - - ±250 nA 12 - - A IC = 250µA, VGE = 0V VCE = BVCES IC = 2.3A, VGE = 15V IC = 40µA, VCE = VGE Gate to Emitter Leakage Current IGES VGE = ±20V Switching SOA SSOA TJ = 150oC, RG = 51Ω, VGE = 15V, L = 400µH, VCE(PK) = 1200V Gate to Emitter Plateau Voltage VGEP IC = 2.3A, VCE = 0.5 BVCES - 10.2 - V IC = 10A, VCE = 0.5 BVCES VGE = 15V - 24 30 nC VGE = 20V - 32 39 nC - 21 25 ns - 11 15 ns - 185 240 ns - 100 130 ns - 370 500 µJ - 195 270 µJ On-State Gate Charge QG(ON) Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 3) EOFF 2 IGBT and Diode at TJ = 25oC ICE = 2.3A VCE = 0.8 BVCES VGE = 15V RG = 51Ω L = 5mH Test Circuit (Figure 20) HGTP2N120BND, HGT1S2N120BNDS TC = 25oC, Unless Otherwise Specified (Continued) Electrical Specifications PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 3) EOFF Diode Forward Voltage VEC Diode Reverse Recovery Time trr Thermal Resistance Junction To Case RθJC TEST CONDITIONS MIN TYP MAX UNITS - 25 30 ns - 11 15 ns - 195 260 ns - 160 200 ns - 725 1000 µJ - 280 380 µJ IEC = 2.3A - - 3.2 V IEC = 2.3A, dlEC/dt = 200A/µs - 52 60 ns IEC = 1A, dlEC/dt = 200A/µs - 38 44 ns IGBT - - 1.20 oC/W Diode - - 2.5 oC/W IGBT and Diode at TJ = 150oC ICE = 2.3A VCE = 0.8 BVCES VGE = 15V RG = 51Ω L = 5mH Test Circuit (Figure 20) NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Unless Otherwise Specified ICE , DC COLLECTOR CURRENT (A) 12 VGE = 15V 10 8 6 4 2 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 3 150 ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 14 TJ = 150oC, RG = 51Ω, VGE = 15V, L = 1mH 12 10 8 6 4 2 0 0 200 400 600 800 1000 1200 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1400 FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA HGTP2N120BND, HGT1S2N120BNDS TJ = 150oC, RG = 51Ω, L = 5mH, V CE = 960V TC = 75oC, VGE = 15V, IDEAL DIODE 100 TC 75oC 75oC 50 VGE 15V 12V fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON + EOFF) VGE PC = CONDUCTION DISSIPATION TC (DUTY FACTOR = 50%) 110oC 15V o o RØJC = 1.2 C/W, SEE NOTES 110 C 12V 10 0.5 1.0 2.0 ICE, COLLECTOR TO EMITTER CURRENT (A) 25 20 35 tSC 30 10 25 20 5 12 5.0 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) TC = 25oC TC = -55oC 4 TC = 150oC 2 DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250µs 0 7 15 10 TC = -55oC 8 TC = 25oC 6 TC = 150oC 4 2 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250µs 0 0 1 2 3 5 4 6 7 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 400 2.0 RG = 51Ω, L = 5mH, VCE = 960V 1.5 EOFF, TURN-OFF ENERGY LOSS (µJ) EON, TURN-ON ENERGY LOSS (mJ) 14 FIGURE 4. SHORT CIRCUIT WITHSTAND TIME 8 1 2 3 4 5 6 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 13 VGE , GATE TO EMITTER VOLTAGE (V) 10 0 ISC 15 FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 6 40 VCE = 840V, RG = 51Ω, TJ = 125oC ISC, PEAK SHORT CIRCUIT CURRENT (A) Unless Otherwise Specified (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (µs) fMAX, OPERATING FREQUENCY (kHz) Typical Performance Curves TJ = 150oC, VGE = 12V, VGE = 15V 1.0 0.5 TJ = 25oC, VGE = 12V, VGE = 15V 0 0 1 2 3 4 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 4 5 RG = 51Ω, L = 5mH, VCE = 960V 350 300 TJ = 150oC, VGE = 12V OR 15V 250 200 150 TJ = 25oC, VGE = 12V OR 15V 100 50 0 0 1 2 3 4 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 5 HGTP2N120BND, HGT1S2N120BNDS Typical Performance Curves Unless Otherwise Specified (Continued) 40 45 RG = 51Ω, L = 5mH, VCE = 960V 35 40 TJ = 25oC, TJ = 150oC, VGE = 12V trI , RISE TIME (ns) tdI , TURN-ON DELAY TIME (ns) RG = 51Ω, L = 5mH, VCE = 960V 35 30 25 TJ = 25oC, TJ = 150oC, VGE = 12V 30 25 20 15 10 20 15 0 1 4 3 2 TJ = 25oC OR TJ = 150oC, VGE = 15V 5 TJ = 25oC, TJ = 150oC, VGE = 15V 0 5 0 1 3 4 2 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 400 RG = 51Ω, L = 5mH, VCE = 960V 400 350 350 300 tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 450 VGE = 12V, VGE = 15V, TJ = 150oC 300 250 200 150 100 TJ = 150oC, VGE = 12V OR 15V 200 150 5 20 VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE < 0.5%, VCE = 20V PULSE DURATION = 250µs 25 20 15 TC = 25oC TC = 150oC TC = -55oC 0 7 8 9 10 11 12 13 VGE, GATE TO EMITTER VOLTAGE (V) FIGURE 13. TRANSFER CHARACTERISTIC 5 14 0 1 3 2 4 5 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT 30 5 TJ = 25oC, VGE = 12V OR 15V ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT ICE, COLLECTOR TO EMITTER CURRENT (A) 250 50 3 2 1 4 ICE , COLLECTOR TO EMITTER CURRENT (A) 10 RG = 51Ω, L = 5mH, VCE = 960V 100 VGE = 12V, VGE = 15V, TJ = 25oC 0 5 15 IG (REF) = 1mA, RL = 260Ω, TC = 25oC 15 VCE = 1200V 10 VCE = 400V VCE = 800V 5 0 0 5 10 20 25 15 QG , GATE CHARGE (nC) FIGURE 14. GATE CHARGE WAVEFORMS 30 35 HGTP2N120BND, HGT1S2N120BNDS 0.8 Unless Otherwise Specified (Continued) FREQUENCY = 1MHz C, CAPACITANCE (nF) CIES 0.6 0.4 COES 0.2 CRES 0 0 5 10 15 20 25 ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 3.0 DUTY CYCLE < 0.5%, TC = 110oC PULSE DURATION = 250µs 2.5 2.0 VGE = 15V 1.5 VGE = 10V 1.0 0.5 0 0 1.5 2.0 3.0 2.5 3.5 4.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ZθJC , NORMALIZED THERMAL RESPONSE 1.0 0.5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE 100 0.5 0.2 0.1 10-1 t1 PD 0.05 t2 0.02 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 0.01 10-2 10-5 SINGLE PULSE 10-4 10-3 10-2 10-1 100 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE 70 TC = 25oC, dIEC / dt = 200A/µs t, RECOVERY TIMES (ns) IF, FORWARD CURRENT (A) 10 150oC 1 25oC 60 trr 50 40 ta 30 tb 20 -55oC 0.1 0.5 1.5 1.0 2.0 VF, FORWARD VOLTAGE (V) FIGURE 18. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP 6 2.5 10 0 1 2 3 4 IF, FORWARD CURRENT (A) FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT 5 HGTP2N120BND, HGT1S2N120BNDS Test Circuit and Waveforms HGTP2N120BND 90% 10% VGE EON EOFF VCE L = 5mH 90% RG = 51Ω + - ICE VDD = 960V 10% td(OFF)I trI tfI td(ON)I FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 7 ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.