HANBit HMD4M32M8GL 16Mbyte(4Mx32) Fast Page Mode, 4K Refresh 72Pin SIMM Part No. HMD4M32M8GL GENERAL DESCRIPTION The HMD4M32M8GL is a 4M x 32bit dynamic RAM high-density memory module. The module consists of eight CMOS 4M x 4bit DRAMs in 24-pin SOJ packages mounted on a 72-pin, double-sided, FR-4-printed circuit board. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM components. The module is a single In-line Memory Module with edge connections and is intended for mounting in to 72-pin edge connector sockets. All module components may be powered from a single 5V DC power supply and all inputs and outputs are TTL-compatible. FEATURES PIN ASSIGNMENT w Part Identification HMD4M32M8GL- 4,096 Cycles/64ms Ref . Gold PIN SYMBOL PIN SYMBOL PIN SYMBOL w High-density 16MByte design 1 Vss 25 DQ22 49 DQ8 w Single + 5V ±0.5V power supply 2 DQ0 26 DQ7 50 DQ24 w JEDEC standard pinout 3 DQ16 27 DQ23 51 DQ9 4 DQ1 28 A8 52 DQ25 5 DQ17 29 A10 53 DQ10 6 DQ2 30 Vcc 54 DQ26 7 DQ18 31 /WE2 55 DQ11 8 DQ3 32 NC 56 DQ27 9 DQ19 33 Vss 57 DQ12 10 Vcc 34 /RAS 58 DQ28 11 /WE0 35 Vcc 59 /WE3 12 A0 36 NC 60 DQ29 13 A1 37 NC 61 DQ13 14 A2 38 /OE0 62 DQ30 15 A3 39 Vss 63 DQ14 16 A4 40 /CAS 64 DQ31 17 A5 41 Vcc 65 DQ15 18 A6 42 NC 66 Vss 19 A7 43 NC 67 NC 20 DQ4 44 NC 68 NC 21 DQ20 45 A9 69 BDIN w Access times : 50, 60ns w FP(Fast Page) mode operation w TTL compatible inputs and outputs w FR4-PCB design OPTIONS MARKING w Timing 50ns access -5 60ns access -6 w Packages 72-pin SIMM M PIN CONFIGURATION DESCRIPTION Pin Name FUNCTION A0 – A11 Address Input(4K Ref.) A0 – A10 Address Input(2K Ref.) DQ0-31 Data In/Out /WE0-/WE3 Read/Write Input /OE Data Output Enable /CAS Column Address Strobe /RAS Row Address Strobe BDIN Board Insertion Signal SIZE Size Indentification 22 DQ5 46 A11 70 NC Vcc/ Vss Power and Ground 23 DQ21 47 /WE1 71 SIZE NC No Connection 24 DQ6 48 Vcc 72 Vss URL: www.hbe.co.kr REV.1.0. (August. 2002) 1 HANBit Electronics Co.,Ltd. HANBit HMD4M32M8GL FUNCTIONAL BLOCK DIAGRAM DQ0-DQ3 DQ0 DQ1 DQ2 A0-A10(A11) DQ3 DQ4-DQ7 DQ0 DQ1 DQ2 A0-A10(A11) DQ3 DQ8-DQ11 DQ0 DQ1 DQ2 A0-A10(A11) DQ3 DQ12-DQ15 U2 CAS RAS W OE U3 CAS RAS W OE /WE1 DQ0 DQ1 DQ2 A0-A10(A11) DQ3 U1 CAS RAS W OE /CAS /RAS /WE0 U4 CAS RAS W OE DQ0 DQ1 DQ2 A0-A10(A11) DQ3 U5 CAS RAS W OE DQ16-DQ19 /WE2 DQ0 DQ1 DQ2 A0-A10(A11) DQ3 U6 CAS RAS OE W CAS RAS W OE DQ20-DQ23 DQ0 DQ1 DQ2 A0-A10(A11) DQ3 U7 DQ24-DQ27 /WE3 DQ0 DQ1 DQ2 A0-A10(A11) DQ3 U8 CAS RAS W OE DQ28-DQ31 /OE A0-A10(A11) Vcc Vss URL: www.hbe.co.kr REV.1.0. (August. 2002) 0.1uF or Capacitor for each DRAM 2 0.22uF To all DRAMs HANBit Electronics Co.,Ltd. HANBit HMD4M32M8GL ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN ,OUT -1V to 7.0V Voltage on Vcc Supply Relative to Vss Vcc -1V to 7.0V Power Dissipation PD 8W TSTG -55oC to 150oC Voltage on Any Pin Relative to Vss Storage Temperature Short Circuit Output Current IOS 50mA w Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED DC OPERATING CONDITIONS ( Voltage reference to VSS, TA=0 to 70 o C ) PARAMETER SYMBOL MIN TYP MAX UNIT Supply Voltage Vcc 4.5 5.0 5.5 V Ground Vss 0 0 0 V Input High Voltage VIH 2.4 - Vcc+1 V Input Low Voltage VIL -1.0 - 0.8 V DC AND OPERATING CHARACTERISTICS SYMBOL SPEED MIN MAX UNITS ICC1 -5 - 720 mA -6 - 640 mA - 16 mA -5 - 720 mA -6 - 640 mA -5 - 640 mA -6 - 560 mA - 8 mA -5 - 720 mA -6 - 640 mA Il(L) -40 40 µA IO(L) -40 40 µA VOH 2.4 - V VOL - 0.4 V ICC2 ICC3 ICC4 ICC5 ICC6 ICC1 : Operating Current * (/RAS , /CAS , Address cycling @t RC=min.) ICC2 : Standby Current ( /RAS=/CAS=VIH ) ICC3 : /RAS Only Refresh Current * ( /CAS=V IH, /RAS, Address cycling @tRC=min ) ICC4 : Fast Page Mode Current * (/RAS=VIL, /CAS, Address cycling @tPC=min ) URL: www.hbe.co.kr REV.1.0. (August. 2002) 3 HANBit Electronics Co.,Ltd. HANBit HMD4M32M8GL ICC5 : Standby Current (/RAS=/CAS=Vcc-0.2V ) ICC6 : /CAS-Before-/RAS Refresh Current * (/RAS and /CAS cycling @t RC=min ) IIL : Input Leakage Current (Any input 0V ≤ VIN ≤ 6.5V, all other pins not under test = 0V) IOL : Output Leakage Current (Data out is disabled, 0V ≤ VOUT ≤ 5.5V VOH : Output High Voltage Level (IOH= -5mA ) VOL : Output Low Voltage Level (IOL = 4.2mA ) * NOTE: ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1 and ICC3, address cad be changed maximum once while /RAS=VIL. In ICC4, address can be changed maximum once within one page mode cycle. CAPACITANCE o ( TA=25 C, Vcc = 5V, f = 1Mz ) DESCRIPTION SYMBOL MIN MAX UNITS Input Capacitance (A0-A11) CIN1 - 40 pF Input Capacitance (/WE0-/WE3) C IN2 - 49 pF Input Capacitance (/RAS) CIN3 - 49 pF Input Capacitance (/CAS) CIN4 - 49 pF Input/Output Capacitance (DQ0-31) CDQ1 - 49 pF AC CHARACTERISTICS o ( 0 C ≤ TA ≤ 70oC , Vcc = 5V±10%, See notes 1,2.) -5 STANDARD OPERATION -6 SYMBOL UNIT MIN MAX MAX Random read or write cycle time tRC Access time from /RAS tRAC 50 60 ns Access time from /CAS tCAC 13 15 ns Access time from column address tAA 25 30 ns /CAS to output in Low-Z tCLZ 0 Output buffer turn-off delay tOFF 0 13 0 15 ns Transition time (rise and fall) tT 3 50 3 50 ns /RAS precharge time tRP 30 /RAS pulse width tRAS 50 /RAS hold time tRSH 13 15 ns /CAS hold time tCSH 50 60 ns /CAS pulse width tCAS 13 10K 15 10K ns /RAS to /CAS delay time tRCD 20 37 20 45 ns /RAS to column address delay time tRAD 15 25 15 30 ns /CAS to /RAS precharge time tCRP 5 5 ns Row address set-up time tASR 0 0 ns Row address hold time tRAH 10 10 ns Column address set-up time tASC 0 0 ns URL: www.hbe.co.kr REV.1.0. (August. 2002) 4 90 MIN 110 ns 0 ns 40 10K 60 ns 10K ns HANBit Electronics Co.,Ltd. HANBit HMD4M32M8GL Column address hold time tCAH 10 10 ns Column address hold referenced to /RAS tAR 40 45 ns Column Address to /RAS lead time tRAL 25 30 ns Read command set-up time tRCS 0 0 ns Read command hold referenced to /CAS tRCH 0 0 ns Read command hold referenced to /RAS tRRH 0 0 ns Write command hold time tWCH 10 10 ns Write command hold referenced to /RAS tWCR 40 45 ns Write command pulse width tWP 10 10 ns Write command to /RAS lead time tRWL 15 15 ns Write command to /CAS lead time tCWL 13 15 ns Data-in set-up time tDS 0 0 ns Data-in hold time tDH 10 15 ns Data-in hold referenced to /RAS tDHR 40 45 ns Refresh period 2K Ref. tREF Write command set-up time tWCS 0 0 ns /CAS setup time (C-B-R refresh) tCSR 5 5 ns /CAS hold time (C-B-R refresh) tCHR 10 10 ns /RAS precharge to /CAS hold time tRPC 5 5 ns Access time from /CAS precharge tCPA Fast page mode cycle time tPC 35 40 ns /CAS precharge time (Fast page) tCP 10 10 ns /RAS pulse width (Fast page ) tRASP 50 /W to /RAS precharge time (C-B-R refresh) tWRP 10 10 ns /W to /RAS hold time (C-B-R refresh) tWRH 10 10 ns /CAS precharge(C-B-R counter test) tCPT 20 20 ns 32 32 30 200K 35 60 200K ns ns ns NOTES 1.An initial pause of 200µs is required after power-up followed by any 8 /RAS-only or /CAS-before-/RAS refresh cycles before proper device operation is achieved. 2.VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Transition times are measured between VIH(min) and VIL(max) and are assumed to be 5ns for all inputs. 3.Measured with a load equivalent to 2TTL loads and 100pF 4.Operation within the tRCD(max) limit insures that tRAC(max) can be met. tRCD(max) is specified as a reference point only. If tRCD is greater than the specified tRCD(max) limit, then access time is controlled exclusively by t CAC. 5.Assumes that tRCD ≥ tRCD(max) 6. tAR, tWCR, tDHR are referenced to tRAD(max) 7.This parameter defines the time at which the output achieves the open circuit condition and is not referenced to VOH or VOL. 8. tWCS, tRWD, tCWD and tAWD are non restrictive operating parameter. They are included in the data sheet as electrical characteristic only. If t WCS ≥ tWCS(min) the cycle is an early write URL: www.hbe.co.kr REV.1.0. (August. 2002) 5 HANBit Electronics Co.,Ltd. HANBit HMD4M32M8GL cycle and the data out pin will remain high impedance for the duration of the cycle. 9. Either tRCH or tRRH must be satisfied for a read cycle. 10. These parameters are referenced to the /CAS leading edge in early write cycles and to the /W leading edge in readwrite cycles. 11. Operation within the tRAD(max) limit insures that tRAC(max) can be met. tRAD(max) is specified as a reference point only. If tRAD is greater than the specified tRAD(max) limit. then access time is controlled by tAA. TIMING DIAGRAM Please refer to attached timing diagram chart (I) URL: www.hbe.co.kr REV.1.0. (August. 2002) 6 HANBit Electronics Co.,Ltd. HANBit URL: www.hbe.co.kr REV.1.0. (August. 2002) HMD4M32M8GL 7 HANBit Electronics Co.,Ltd. HANBit URL: www.hbe.co.kr REV.1.0. (August. 2002) HMD4M32M8GL 8 HANBit Electronics Co.,Ltd. HANBit HMD4M32M8GL PACKAGING INFORMATION SIMM Design 3.38± 0.2mm 25.4 ± 0.2mm 6.35± 0.2mm 6.35± 0.2mm 6.35± 0.2mm 95.25± 0.2mm 2.54 mm MIN 0.25 mm MAX 1.27 1.27±0.08m Gold : 1.04±0.10 mm Solder:0.914±0.10mm ORDERING INFORMATION Part Number Density Org. Package HMD4M32M8GL-5 16MByte 4MX 32bit 72 Pin-SIMM HMD4M32M8GL-6 16MByte 4MX 32bit 72 Pin-SIMM URL: www.hbe.co.kr REV.1.0. (August. 2002) 9 Refresh Cycle 4K Cycles 64ms Ref. 4K Cycles 64ms Ref. Vcc SPEED 5.0V 50ns 5.0V 60ns HANBit Electronics Co.,Ltd.