INTERSIL HS0-303AEH-Q

Radiation Hardened CMOS Dual SPDT Analog Switch
HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH
The HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH analog
Features
switches are monolithic devices fabricated using Intersil’s
dielectrically isolated Radiation Hardened Silicon Gate (RSG)
process technology to insure latch-up free operation. They are
pinout compatible and functionally equivalent to the
HS-303RH, but offer improved 300kRAD(Si) total dose
capability. These switches offers low-resistance switching
performance for analog voltages up to the supply rails. “ON”
resistance is low and stays reasonably constant over the full
range of operating voltage and current. “ON” resistance also
stays reasonably constant when exposed to radiation.
Break-before-make switching is controlled by 5V digital inputs.
The HS-303ARH should be operated with nominal ±15V
supplies, while the HS-303BRH should be operated with
nominal ±12V supplies.
Specifications
Specifications for Rad Hard QML devices are controlled by the
Defense Supply Center in Columbus (DSCC). The SMD numbers
listed below must be used when ordering.
• QML, Per MIL-PRF-38535
• Radiation Performance
- Total Dose: 3x105 RAD(Si)
- SEE: For LET = 60MeV-mg/cm2 at 60° Incident Angle,
<150pC Charge Transferred to the Output of an Off Switch
• No Latch-Up, Dielectrically Isolated Device Islands
• Pinout and Functionally Compatible with Intersil HS-303RH
and HI-303 Series Analog Switches
• Analog Signal Range Equal to the Supply Voltage Range
• Low Leakage. . . . . . . . . . . . . . . . . . . . . 100nA (Max, Post-Rad)
• Low rON . . . . . . . . . . . . . . . . . . . . . . . . . . . 70Ω (Max, Post-Rad)
• Low Standby Supply Current. . . . . . . . . . . . . +150µA/-100µA
(Max, Post-Rad)
Detailed Electrical Specifications for the HS-303ARH,
HS-303AEH, HS-303BRH, HS-303BEH are contained in
SMD 5962-95813. A “hot-link” is provided from our website for
downloading
Functional Diagram
IN
N
Pin Configurations
HS1-303ARH, HS-303BRH
(SBDIP), CDIP2-T14
TOP VIEW
P
D
TRUTH TABLE
LOGIC
SW1 AND SW2
SW3 AND SW4
0
OFF
ON
1
ON
OFF
NC
1
14 V+
S3
2
13 S4
D3
3
12 D4
D1
4
11 D2
S1
5
10 S2
IN1
6
9 IN2
GND
7
8 V-
HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH
(FLATPACK) CDFP3-F14
TOP VIEW
NC
1
14
2
13
3
12
4
11
5
10
6
9
7
8
S3
D3
D1
S1
IN1
GND
December 12, 2012
FN6411.2
1
V+
S4
D4
D2
S2
IN2
V-
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas Inc. 2006, 2008, 2012. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH
Ordering Information
ORDERING NUMBER
(Note)
PART NUMBER
TEMP. RANGE
(°C)
PKG.
PKG.
DWG. #
5962F9581304QCC
HS1-303ARH-8
-55 to +125
14 LD SBDIP
D14.3
5962F9581304QXC
HS9-303ARH-8
-55 to +125
14 LD Flatpack
K14.A
5962F9581304V9A
HS0-303ARH-Q
-55 to +125
14 Ld SBDIP
D14.3
5962F9581306V9A
HS0-303AEH-Q
-55 to +125
14 Ld SBDIP
D14.3
5962F9581304VCC
HS1-303ARH-Q
-55 to +125
14 LD SBDIP
D14.3
5962F9581306VCC
HS1-303AEH-Q
-55 to +125
14 LD SBDIP
D14.3
5962F9581304VXC
HS9-303ARH-Q
-55 to +125
14 LD Flatpack
K14.A
HS0-303ARH/SAMPLE
HS0-303ARH/SAMPLE
-55 to +125
HS1-303ARH/PROTO
HS1-303ARH/PROTO
-55 to +125
14 LD SBDIP
D14.3
HS9-303ARH/PROTO
HS9-303ARH/PROTO
-55 to +125
14 LD Flatpack
K14.A
5962F9581306VXC
HS9-303AEH-Q
-55 to +125
14 LD Flatpack
K14.A
5962F9581305QCC
HS1-303BRH-8
-55 to +125
14 LD SBDIP
D14.3
5962F9581305QXC
HS9-303BRH-8
-55 to +125
14 LD Flatpack
K14.A
5962F9581305V9A
HS0-303BRH-Q
-55 to +125
14 LD SBDIP
D14.3
5962F9581307V9A
HS0-303BEH-Q
-55 to +125
14 LD SBDIP
D14.3
5962F9581305VCC
HS1-303BRH-Q
-55 to +125
14 LD SBDIP
D14.3
5962F9581307VCC
HS1-303BEH-Q
-55 to +125
14 LD SBDIP
D14.3
5962F9581305VXC
HS9-303BRH-Q
-55 to +125
14 LD Flatpack
K14.A
HS0-303BRH/SAMPLE
HS0-303BRH/SAMPLE
-55 to +125
HS1-303BRH/PROTO
HS1-303BRH/PROTO
-55 to +125
14 LD SBDIP
D14.3
HS9-303BRH/PROTO
HS9-303BRH/PROTO
-55 to +125
14 LD Flatpack
K14.A
5962F9581307VXC
HS9-303BEH-Q
-55 to +125
14 LD Flatpack
K14.A
NOTE: These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with
both SnPb and Pb-free soldering operations.
2
FN6411.2
December 12, 2012
HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH
Die Characteristics
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
DIE DIMENSIONS:
2690µm x 5200µm (106mils x 205mils)
Thickness: 483µm ± 25.4µm (19mils ± 1mil)
Backside Finish:
Silicon
INTERFACE MATERIALS:
ASSEMBLY RELATED INFORMATION:
Glassivation:
Substrate Potential:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0kÅ ± 1.0kÅ
Unbiased (DI)
Top Metallization:
ADDITIONAL INFORMATION:
Type: AlSiCu
Thickness: 16.0kÅ ± 2kÅ
Worst Case Current Density:
<2.0 x 105 A/cm2
Transistor Count:
196
Metallization Mask Layout
IN2
S2
D2
D4
S4
HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH
VV+
IN1
S1
D1
D3
S3
GND
For additional products, see www.intersil.com/product_tree
Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted
in the quality certifications found at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time
without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be
accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
3
FN6411.2
December 12, 2012
HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH
Ceramic Dual-In-Line Metal Seal Packages (SBDIP)
-DBASE
METAL
E
-BC A-B S
SECTION A-A
D S
D
BASE
PLANE
Q
S2
-C-
SEATING
PLANE
A
L
S1
eA
A A
b2
b
ccc M C A - B S
e
eA/2
c
aaa M C A - B S D S
D S
INCHES
(c)
b1
M
(b)
M
bbb S
D14.3 MIL-STD-1835 CDIP2-T14 (D-1, CONFIGURATION C)
14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE
LEAD FINISH
c1
-A-
NOTES:
1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded area shown.
The manufacturer’s identification shall not be used as a pin one identification mark.
2. The maximum limits of lead dimensions b and c or M shall be measured
at the centroid of the finished lead surfaces, when solder dip or tin plate
lead finish is applied.
3. Dimensions b1 and c1 apply to lead base metal only. Dimension M
applies to lead plating and finish thickness.
4. Corner leads (1, N, N/2, and N/2+1) may be configured with a partial
lead paddle. For this configuration dimension b3 replaces dimension
b2.
5. Dimension Q shall be measured from the seating plane to the base plane.
SYMBOL
MILLIMETERS
MIN
MAX
MIN
MAX
A
-
0.200
b
0.014
0.026
0.36
b1
0.014
0.023
b2
0.045
0.065
b3
0.023
c
0.008
c1
D
-
5.08
-
0.66
2
0.36
0.58
3
1.14
1.65
-
0.045
0.58
1.14
4
0.018
0.20
0.46
2
0.008
0.015
0.20
-
0.785
E
0.220
e
0.310
5.59
0.100 BSC
NOTES
0.38
3
19.94
-
7.87
-
2.54 BSC
-
eA
0.300 BSC
7.62 BSC
-
eA/2
0.150 BSC
3.81 BSC
-
L
0.125
0.200
3.18
5.08
-
Q
0.015
0.060
0.38
1.52
5
S1
0.005
-
0.13
-
6
S2
0.005
-
0.13
-
7
α
90o
105o
90o
105o
-
aaa
-
0.015
-
0.38
-
bbb
-
0.030
-
0.76
-
ccc
-
0.010
-
0.25
-
M
-
0.0015
-
N
14
0.038
14
2
8
Rev. 0 4/94
6. Measure dimension S1 at all four corners.
7. Measure dimension S2 from the top of the ceramic body to the nearest
metallization or lead.
8. N is the maximum number of terminal positions.
9. Braze fillets shall be concave.
10. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
11. Controlling dimension: INCH.
4
FN6411.2
December 12, 2012
HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH
Ceramic Metal Seal Flatpack Packages (Flatpack)
K14.A MIL-STD-1835 CDFP3-F14 (F-2A, CONFIGURATION B)
A
e
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
A
INCHES
PIN NO. 1
ID AREA
-A-
D
-B-
S1
b
MILLIMETERS
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
0.045
0.115
1.14
2.92
-
b
0.015
0.022
0.38
0.56
-
b1
0.015
0.019
0.38
0.48
-
c
0.004
0.009
0.10
0.23
-
c1
0.004
0.006
0.10
D
-
0.390
0.15
-
9.91
3
E1
0.004
M H A-B S
D S
Q
0.036
M H A-B S
D S
C
E
-D-
A
-C-
E
0.235
0.260
E1
-
0.290
5.97
E2
0.125
-
3.18
-
-
E3
0.030
-
0.76
-
7
0.015
0.20
-
6.60
-
7.11
3
-HL
E2
E3
SEATING AND
BASE PLANE
-
c1
L
E3
e
k
LEAD FINISH
BASE
METAL
(c)
b1
M
0.050 BSC
0.008
1.27 BSC
-
0.38
2
L
0.270
0.370
6.86
9.40
-
Q
0.026
0.045
0.66
1.14
8
S1
0.005
-
0.13
M
-
0.0015
-
-
0.04
6
-
M
(b)
SECTION A-A
N
14
14
Rev. 0 5/18/94
NOTES:
1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded area shown.
The manufacturer’s identification shall not be used as a pin one identification mark. Alternately, a tab (dimension k) may be used to identify
pin one.
2. If a pin one identification mark is used in addition to a tab, the limits of
dimension k do not apply.
3. This dimension allows for off-center lid, meniscus, and glass overrun.
4. Dimensions b1 and c1 apply to lead base metal only. Dimension M applies to lead plating and finish thickness. The maximum limits of lead
dimensions b and c or M shall be measured at the centroid of the finished lead surfaces, when solder dip or tin plate lead finish is applied.
5. N is the maximum number of terminal positions.
6. Measure dimension S1 at all four corners.
7. For bottom-brazed lead packages, no organic or polymeric materials
shall be molded to the bottom of the package to cover the leads.
8. Dimension Q shall be measured at the point of exit (beyond the meniscus) of the lead from the body. Dimension Q minimum shall be reduced
by 0.0015 inch (0.038mm) maximum when solder dip lead finish is
applied.
9. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
10. Controlling dimension: INCH.
5
FN6411.2
December 12, 2012