HS54095 Silicon N Channel MOS FET High Speed Power Switching REJ03G1668-0200 Rev.2.00 Dec 10, 2009 Features • Low on-resistance RDS(on) = 13.5 Ω typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25°C) • Low drive current • High density mounting Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1)) D 1. Gate 2. Drain 3. Source G 32 1 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% REJ03G1668-0200 Rev.2.00 Dec 10, 2009 Page 1 of 1 Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 Pch θch-a Tch Tstg Ratings 600 ±30 0.2 0.8 0.2 0.8 0.75 166.7 150 –55 to +150 Unit V V A A A A W °C/W °C °C HS54095 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Min 600 — — 3 — Typ — — — — 13.5 Max — 1 ±0.1 5 16.5 Unit V μA μA V Ω Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF — — — — — — — — — — — 66 8.7 1.3 30 15 51 175 4.8 0.6 3.2 0.77 — — — — — — — — — — 1.30 pF pF pF ns ns ns ns nC nC nC V trr — 220 — ns Body-drain diode reverse recovery time Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 0.1 A, VGS = 10 V Note2 VDS = 25 V VGS = 0 f = 1 MHz ID = 0.1 A VGS = 10 V RL = 3000 Ω Rg = 10 Ω VDD = 480 V VGS = 10 V ID = 0.2 A IF = 0.2 A, VGS = 0 Note2 IF = 0.2 A, VGS = 0 diF/dt = 50 A/μs Notes: 2. Pulse test 3. Since this device is equipped with high voltage FET chip (VDSS ≥ 600 V), high voltage may be supplied. Therefore, please be sure to confirm about Electric discharge between Drain terminal and other terminal. 4. This device is sensitive to electrostatic discharge. It is recommended to adopt appropriate cautions when handling this product. REJ03G1668-0200 Rev.2.00 Dec 10, 2009 Page 2 of 2 HS54095 Main Characteristics Typical Output Characteristics Maximum Safe Operation Area 0.8 10 Ta = 25°C Pulse Test Drain Current ID (A) 1 10 PW μs = 0.1 10 0 μs 0.01 Operation in this area is limited by RDS(on) 1 10 100 4V 3.8 V 3.6V 0.2 VGS = 3.4 V 0 4 8 12 16 20 Drain to Source Voltage VDS (V) Typical Transfer Characteristics Static Drain to Source on State Resistance vs. Drain Current (Typical) Drain to Source on State Resistance RDS(on) (Ω) Drain Current ID (A) 4.2 V Drain to Source Voltage VDS (V) VDS = 10 V Pulse Test Static Drain to Source on State Resistance RDS(on) (Ω) 4.4 V 0.4 1000 1 Tc = 75°C 0.1 25°C −25°C 0.01 0.001 4.6 V 5V 10 V 0.6 0 0.001 0.1 2 3 4 5 6 100 VGS = 10 V Ta = 25°C Pulse Test 10 1 0.01 0.1 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Resistance vs. Temperature (Typical) Body-Drain Diode Reverse Recovery Time (Typical) 40 VGS = 10 V Pulse Test 30 ID = 0.4 A 20 0.1 A 0.2 A 10 0 -25 0 25 50 75 100 125 150 Case Temperature Tc (°C) REJ03G1668-0200 Rev.2.00 Dec 10, 2009 Page 3 of 3 Reverse Recovery Time trr (ns) Drain Current ID (A) Ta = 25°C 1 shot 1 1000 100 di / dt = 50 A / μs VGS = 0, Ta = 25°C 10 0.1 0.3 Reverse Drain Current IDR (A) 1 HS54095 Typical Capacitance vs. Drain to Source Voltage 100 Ciss 10 Coss Crss 1 VGS = 0 f = 1 MHz 0.1 100 200 ID = 0.2 A Ta = 25 °C 16 VGS VDD = 480 V 300 V 100 V 600 VDS 400 4 VDD = 480 V 300 V 100 V 0.6 4 6 8 Gate Charge Qg (nC) Reverse Drain Current vs. Source to Drain Voltage (Typical) Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 0.4 0.2 0 0 2 0 Drain to Source Voltage VDS (V) VGS = 0 Ta = 25 °C Pulse Test 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) REJ03G1668-0200 Rev.2.00 Dec 10, 2009 Page 4 of 4 12 8 200 300 0.8 Reverse Drain Current IDR (A) 800 0 0 Gate to Source Cutoff Voltage VGS(off) (V) Capacitance C (pF) Ta = 25°C 5 0 10 VDS = 10 V 4 3 ID = 10 mA 1 mA 0.1 mA 2 1 0 -25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) Gate to Source Voltage VGS (V) 1000 Drain to Source Voltage VDS (V) Dynamic Input Characteristics (Typical) HS54095 Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 1 D=1 0.5 0.3 0.2 0.1 θch – a(t) = γs (t) • θch – a θch – a = 166.7°C/W, Ta = 25°C 0.1 0.05 PDM 0.02 0.03 0.01 ulse ot p 1sh 0.01 10 μ 100 μ D= PW T PW T 1m 10 m 100 m Pulse Width 1 10 100 PW (s) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 1000 90% D.U.T. RL 10 Ω Vin 10 V Vin V DD = 300 V Vout 10% 10% 90% td(on) REJ03G1668-0200 Rev.2.00 Dec 10, 2009 Page 5 of 5 tr 10% 90% td(off) tf HS54095 Package Dimensions Package Name TO-92(1) JEITA Package Code SC-43A Previous Code TO-92(1) / TO-92(1)V RENESAS Code PRSS0003DA-A MASS[Typ.] 0.25g 4.8 ± 0.3 Unit: mm 2.3 Max 0.7 0.60 Max 0.55 Max 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 Max 1.27 2.54 Since HS54095 is equipped with high voltage FET chip (VDSS ≥ 600 V), high voltage may be supplied. Therefore, please be sure to confirm about Electric discharge between Drain terminal and other terminal. Ordering Information Part No. HS54095TZ-E Note: Quantity Shipping Container Hold Box, Radial Taping 2500 pcs Leads is forming applied as following figure. Unit: mm 9.0 18.0 19.0 16.0 24.7 max. 12.7 2.5 2.5 6.35 12.7 REJ03G1668-0200 Rev.2.00 Dec 10, 2009 Page 6 of 6 4.0 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. 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