HUASHAN HSBD138

Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
HSBD138
█ APPLICATIONS
Medium Power Linear switching Applications
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
Tstg ——Storage Temperature………………………… -55~150℃
T j ——Junction Temperature……………………………… 150℃
PC——Collector Dissipation(Tc=25℃)…………………… 12.5W
1―Emitter, E
PC——Collector Dissipation(TA=25℃)…………………… 1.25W
2―Collector,C
3―Base,B
VCBO ——Collector-Base Voltage…………………………… -60V
VCEO ——Collector-Emitter Voltage………………………… -60V
VEBO——Emitter-Base Voltage………………………………… -5V
IC——Collector Current(Pulse)………………………………… -3A
IC——Collector Current(DC)……………………………… -1.5A
IB——Base Current……………………………………………-0.5A
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
ICBO
Collector Cut-off Current
-0.1
μA
VCB=-30V, IE=0
IEBO
Emitter-Base Cut-off Current
-10
μA
VEB=-5V, IC=0
hFE(1)
DC Current Gain
25
VCE=-2V, IC=-5mA
hFE(2)
25
VCE=-2V, IC=-0.5A
hFE(3)
40
250
VCE=-2V, IC=-150mA
VCE(sat)
Collector-Emitter Saturation Voltage
-0.5
V
Ic=-500mA, IB=-50mA
VBE(ON)
Base-Emitter On Voltage
-1.0
V
Ic=-0.5A, VCE=-2V
VCEO(SUS)
Collector-Emitter Sustaining Voltage
-60
Ic=-30mA,IB=0
█hFE(3) Classification
Cassification
hFE(3)
6
40~100
10
16
63~160
100~250