PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBDW94C █ APPLICATIONS Power Linear And Switching Applicatione. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -65~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 80W VCBO——Collector-Base Voltage……………………………-100V 1―Base，B 2―Collector，C 3―Emitter, E VCEO——Collector-Emitter Voltage……………………… -100V IC——Collector Current（DC）……………………………… -12A IC——Collector Current（Pulse）………………………………-15A IB——Base Current…………………………………………-0.2A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol BVCEO(SUS) ICEO Characteristics Collector-Emitter Sustaining Voltage Min Typ Max Test Conditions V IC=-100mA, IB=0 -1 mA VCE=-100V, IB=0 -100 Collector Cut-off Current Unit IEBO Emitter-Base Cutoff Current -2 mA VEB=-5V, IC=0 ICBO Collector Cut-off Current -100 μA VCB=-100V, IE=0 HFE（1） DC Current Gain VCE=-3V, IC=-3A 1000 HFE（2） 750 HFE（3） 100 VCE=-3V, IC=-5A 20000 VCE=-3V, IC=-10A VCE(sat1) Collector- Emitter Saturation Voltage -2 V IC=-5A, IB=-20mA VCE(sat2) Collector- Emitter Saturation Voltage -3 V IC=-10A, IB=-100mA VBE(sat1) Base-Emitter Saturation Voltage -2.5 V IC=-5A,IB=-20mA VBE(sat2) Base-Emitter Saturation Voltage -4 V IC=-10A,IB=-100mA Shantou Huashan Electronic Devices Co.,Ltd. NPN DARLINGTON TRANSISTOR HBDW93C