HVV1011-040 HVV1214-075 L-Band Avionics Pulsed Power Transistor HVV1011-040 The innovative Semiconductor Company! HVV1011-040 L-Band Radar Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Transistor Duty L-Band Avionics Pulsed Power L-Band Avionics Pulsed Power Transistor 1200-1400 MHz, 200µs Duty 1030-1090MHz, 50!sPulse, Pulse,10% 5% Duty HVV1011-035 PRODUCT OVERVIEW HVV1011-040 1030-1090MHz, 50!s Pulse, 5% Duty L-Band Avionics Pulsed Power Transistor L-Band Avionics Pulsed Power Transistor PACKAGE 1030-1090MHz, 50!s 1030-1090MHz, 50µs Pulse, 5% DutyPulse, 5% Duty TM DESCRIPTION DESCRIPTION DESCRIPTION PACKAGE TCAS and Mode-S Applications PACKAGE The high power HVV1011-040 device is for a high DESCRIPTION PACKAGE voltage silicon enhancement mode RF transistor ar in m eli Pr The innovative Semiconductor Company! Theinnovative innovative Semiconductor Company! The Semiconductor Company! The innovative Semiconductor Company! The innovative Semiconductor Company! y The high Thehigh highpower powerHVV1214-075 HVV1011-040device device is is aa high HVV1214-075 designed for L-Band pulsed avionics DESCRIPTION PACKAGE voltage silicon enhancement mode RFapplications transistor voltage silicon enhancement mode RF transistor The high power HVV1011-040 device is a high operating over the frequency range from L-Band Radar Pulsed Power Transistor DESCRIPTION PACKAGE designed for L-Band pulsed radar applications designedsilicon for L-Band pulsed avionics applications voltage enhancement mode transistor The high power HVV1011-035 device isrange aRF high voltage 1030MHz toover 1090MHz. operating the frequency from operating for over the frequency range from 1200-1400 MHz, 200µs Pulse, 10% Duty designed L-Band pulsed avionics applications silicon enhancement mode RF transistor designed for 1.2GHz to HVV1011-040 1.4GHz. The high power device is a high 1030MHz to 1090MHz. operating over the frequency range from L-Band pulsed avionics applications operating over voltage silicon enhancement FEATURES 1030MHz to 1090MHz.mode RF transistor designed for L-Band pulsed applications theFEATURES frequency range fromavionics 1030MHz to 1090MHz. FEATURES operating over the frequency range from The device resides in a Surface Mount Package • High Power Gain 1030MHz to 1090MHz. FEATURES DESCRIPTION with a ceramic lid. The SM200 package style is Excellent Ruggedness x• High Power Gain The device resides in a Surface Mount Package • High Power Gain Features PACKAGE qualified for gross leak test – MIL-STD-883, 48V Supply Voltage x• Excellent Ruggedness with device a ceramic lid. The SM200 package style is •• Excellent Ruggedness The High Power Gain Method 1014.resides in a Surface Mount Package x 48V Supply Voltage The• High high power HVV1214-075 device is a high Gain FEATURES qualified for gross leak – MIL-STD-883, • Power 48V Supply Voltage with a ceramic lid. The test SM200 package style is • Excellent Ruggedness voltage silicon enhancement mode RF transistor ABSOLUTE MAXIMUM RATINGS • Excellent Ruggedness Method 1014. qualified for gross leak test – MIL-STD-883, • 48V Supply Voltage designed for L-Band pulsed radar applications MAXIMUM RATINGS The device resides in a Surface Mount Package • ABSOLUTE High Gain • 48V Power Supply Method 1014. ABSOLUTE MAXIMUM RATINGS operating overVoltage the frequency range from RUGGEDNESS The resides a SM200 Surfacepackage Mount style Package withdevice a ceramic lid. in The is with • Excellent Ruggedness 1.2GHz to Parameter 1.4GHz. The device resides in a two-lead metal flanged ABSOLUTE MAXIMUM RATINGS Value Unit qualified for gross leak test – MIL-STD-883, • Symbol 48V Supply Voltage RUGGEDNESS a ceramic lid. with The SM200 packagepolymer style is qualified for package liquid device crystal ABSOLUTE MAXIMUM Symbol Parameter Value The HVV1011-040 is capable lid. of The VDSS Drain-Source Voltage RATINGS 105 VUnit Method 1014. gross leak test – MIL-STD-883, Method 1014. Symbol Parameter Value Unit RUGGEDNESS HV400 package style is qualified for gross leak VDSS Drain-Source Voltage 10 105 withstanding an output load mismatch VFEATURES Gate-Source Voltage VV GS The device is capable of Test ABSOLUTE MAXIMUM RATINGS VVDSS Drain-Source Voltage Value 105 V test – HVV1011-040 MIL-STD-750D, 1071.6, Symbol Parameter Unit corresponding to a 20:1Method VSWR over all phase Gate-Source GS IDSX Drain Current Voltage 2 10 AV withstanding an output load mismatch V Gate-Source Voltage 10 V Condition C. GS The HVV1011-040 device is capable of 2 95 Drain-Source 105 V angles and rated output power and operating DrainDissipation CurrentVoltage 116 8 DSX PDVIDSS Power WA RUGGEDNESS x2 High Power Gain correspondingan to a 20:1load VSWR over all phase IPDSX Drain Current 2 A withstanding mismatch V Gate-Source Voltage -65 10 V voltage across theoutput frequency band of operation. Power Dissipation 250 W GS D T Storage Temperature to °C Excellent Ruggedness angles and rated output power and operating SymbolSPDx2Parameter Value Unit RUGGEDNESS Power Dissipation 116 W corresponding to a 20:1 VSWR over all phase IT Drain Current 2 A Storage Temperature -65 to °C RUGGEDNESS DSX S +200 x2Drain-Source 48V Storage SupplyVoltage Voltage The HVV1011-040 device is capable of voltage across the frequency band of operation. VDSS 105 V 1,2 T Temperature -65 to °C angles and rated output power and operating S +200 P Power Dissipation 116 W D JunctionVoltage 200 V °C Symbol Parameter Test Condition Max Units The HVV1011-035 device is frequency capable ofband withstanding an withstanding anacross output load mismatch VGS TJ Gate-Source 10 +200 voltage the of operation. 1 JunctionTemperature 200 °C TTSJ Storage -65 to °C LMT Load F = over 1090 MHz 20:1 VSWR Temperature The HVV1214-075 device is capable of corresponding to a 20:1 VSWR all phase output load mismatch corresponding to a 20:1 VSWR at IDSX ABSOLUTE A TJ Drain Current Junction 200 °C Symbol Parameter Test Condition Max Units MAXIMUM 2RATINGS Temperature +200 Mismatch withstanding an output load mismatch 1 angles and rated output power and operating PD2 Power Dissipation 116 W all phaseSymbol angles rated and 20:1 operating LMT and Load output F = power 1090 MHz VSWR Temperature Tolerance TJ Junction 200 °C Parameter Test Condition Max corresponding to ain20:1 VSWR over all phase Units The device resides a two-lead flanged voltage across the frequency band ofmetal operation. Mismatch TS StorageTemperature Temperature -65 to °C 1the frequency voltage across band of operation THERMAL CHARACTERISTICS LMT Load F = 1090 MHz 20:1 VSWR angles and output power and lid. operating package withrated liquid crystal polymer The Tolerance Symbol Parameter Unit +200 Value Mismatch voltage across the frequency band of HV400 package style is qualified for gross leak THERMAL CHARACTERISTICS V Drain-Source Voltage 105 V TJ Junction 200 °C DSS Symbol Parameter Test Condition Max Units Tolerance THERMAL CHARACTERISTICS operation. test – MIL-STD-750D, Method 1071.6, Test 1 THERMAL CHARACTERISTICS V Gate-Source Voltage 10 V Symbol Parameter Max Unit LMT Load F = 1090 MHz 20:1 VSWR 1060MHz GSTemperature THERMAL CHARACTERISTICS Condition C. Symbol Parameter Test Condition Max Units Mismatch IDSX Drain Current 8 A Thermal Resistance 1.5 °C/W 1 Symbol Parameter Unit Parameter Max Unit 2 LMT Load POUT = 75W 20:1 VSWR Tolerance PSymbol Power Dissipation 250 W D 1 Thermal Resistance 1.5 °C/W Mismatch LJJC ThermalTemperature Resistance 0.70 °C/W THERMAL CHARACTERISTICS Symbol Parameter Max Unit T Storage -65 to °C F = 1400MHz RUGGEDNESS S Tolerance ELECTRICAL CHARACTERISTICS Thermal Resistance 1.5 °C/W +200 CHARACTERISTICS TJELECTRICAL JunctionCHARACTERISTICS 200 °C The HVV1214-075 device is capable of SymbolELECTRICAL Parameter Max Unit ELECTRICAL CHARACTERISTICS Temperature withstanding an output load mismatch Thermal Resistance 1.5 °C/W ELECTRICAL CHARACTERISTICS Symbol Parameter Conditions Typ Units corresponding to a 20:1 VSWR over all phase 102 2mA V Drain-Source Breakdown ConditionsVGS=0V,ID=1mA 110 V BR(DSS) Symbol Parameter Typ Units angles and rated output power and operating Symbol Parameter Conditions Typ Units <25V band !A IVDSS Drain Leakage Current VGS=0V,VDS=48V <10 ELECTRICAL voltage across the 110 frequency of Drain-Source Breakdown BR(DSS) VBR(DSS) CHARACTERISTICS Drain-Source Breakdown VGS=0V,ID=1mA VGS=0V,ID=1mA 110 VUnits Symbol Parameter Conditions Typ IIGSS Gate Leakage Current VGS=5V,VDS=0V !A operation. Drain Leakage Current VGS=0V,VDS=48V <10 <1 µA THERMAL CHARACTERISTICS DSS I1DSS Drain Leakage Current VGS=0V,VDS=48V <10 !A V Drain-Source Breakdown VGS=0V,ID=1mA 110 V BR(DSS) G Power Gain P =35W,F=1060MHz 20 dB P OUT IGSS GateGate Leakage Current VGS=5V,VDS=0V <1 µAMax Symbol Parameter Test Condition Units IDSS Leakage Current VGS=5V,VDS=0V <1 !A GSS 1 I Drain Leakage Current VGS=0V,VDS=48V <10 !A 1 1 IRL Input Return LossMax POUT =35W,F=1060MHz Symbol Parameter Unit LMT Load POUT =21 75W VSWR G Power Gain POUT=75W,F=1200MHz,1400MHz Symbol Parameter Conditions Typ 8 20dB20:1 UnitsdB P 1 Power Gain POUT =35W,F=1060MHz dB 1P1 IG Gate Leakage Current VGS=5V,VDS=0V <1 !A GSS Drain Efficiency P =35W,F=1060MHz 52 % Mismatch LJ Thermal Resistance 0.70 °C/W 1 OUT JC IRL Input Return Loss P =75W,F=1200MHz,1400MHz 9 dB VBR(DSS) IRL Drain-Source Breakdown 110 V OUT VGS=0V,ID=1mA 1 F = 1400MHz Input Return Loss P =35W,F=1060MHz 8 dB OUT G11P Power Gain POUT =35W,F=1060MHz 20 dB Tolerance PD Pulse Droop POUT =35W,F=1060MHz dB Drain Efficiency POUT=75W,F=1200MHz,1400MHz 44 % !A IDSS dž Drain Leakage Current VGS=0V,VDS=48V <10 <0.2 D 1 Drain Efficiency P =35W,F=1060MHz 52 % OUT IRL Input Return Loss POUT=35W,F=1060MHz 8 dB 1 Pulse Droop POUT=75W,F=1200MHz,1400MHz <0.6 dB !A IGSS 1 PD Gate Leakage Current VGS=5V,VDS=0V <1 PD1 Pulse Droop P =35W,F=1060MHz <0.2 dB OUT Drain Efficiency POUToutput =35W,F=1060MHz 52 % All parameters measured under conditions at=35W,F=1060MHz 35W with the Conditions: Pulse Widthpulsed = 50 µsec, Pulse Duty Cycle = 5%power at VDDunder = 48V,pulsed IDQ20= conditions 15mA ELECTRICAL CHARACTERISTICS GP1 1Under Gain POUT dB 1Pulse Power PD Pulse Droop P =35W,F=1060MHz <0.2 dB pulse width = 50!sec, duty cycle Width = 5% = and VDDP= Pulse 48V, OUT IDQ =Cycle 15mA a broadband matched fixture. 1.) Pulse Pulse 200µsec, Duty = in 10% at VDD IDQ test = 1 Under IRL12Rated Input Return Loss 8= 48V, dB50mA TCASE = Conditions: 25°C OUT=35W,F=1060MHz parameters measured under pulsed conditions at 35W output power under pulsed conditions with the 2 All at Rated at at TCASE = 25°C 2.) Rated T = 25°C CASE Drain Efficiency POUT 52 matched % 1 pulse width = 50!sec, dutyunder cycle pulsed = 5% and VDD ==35W,F=1060MHz 48V, = 15mA in under a broadband test fixture. Symbol Parameter Conditions Typ Units All parameters measured conditions at 35WIDQ output power pulsed conditions with the 2 PD1 Vpulse Pulse Droop P =35W,F=1060MHz <0.2 dB Rated at T = 25°C OUT CASE Drain-Source Breakdown VGS=0V,ID=1mA 110 V BR(DSS) width = 50!sec, duty cycle = 5% and VDD = 48V, IDQ = 15mA in a broadband matched test fixture. 2 IDSS Drain Current VGS=0V,VDS=48V Rated at TCASE = Leakage 25°C All parameters measured under Current pulsed conditions at 35W outputvisit: power under pulsed IGSS Semiconductors, Gate Leakage VGS=5V,VDS=0V HVVi Inc. For additional information, www.hvvi.com For additional information: 1 Semiconductors, Inc. pulseHVVi width = 50!sec, duty cycle = 5% and VDD = 48V, IDQ = 15mA in a broadband st GP Semiconductors, Gain =75W,F=1200MHz,1400MHz OUTinformation, 10235 S. 51 St.Power Suite 100 HVViPSemiconductors, Inc. www.hvvi.com Confidential 2 HVVi Inc. For additional visit: HVVi Semiconductors, Inc. For additional information, visit: www.hvvi.com Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 1T Rated at = 25°C 10235 S. 51st St. Suite 100 CASE st IRL Input Return Loss P =75W,F=1200MHz,1400MHz 1 <10 µA conditions with <1 µA theEG-01-PO01X1 EG-01-PO01X6 matched test 21 dBfixture. OUT Phoenix, Az. St. 85044 © 2008HVVi HVViSemiconductors, Semiconductors, Inc.Confidential All Rights Reserved.9 st Suite 100 Inc. 10235 S.S. 51 1 10235 St. SuiteEfficiency 100 Semiconductors, Inc.Rights Confidential © 2008 For HVViHVVi Semiconductors, Inc. All Reserved. 44 Phoenix, AZ.5185044 Semiconductors, Inc. additional information, visit: www.hvvi.com džHVVi Drain POUT =75W,F=1200MHz,1400MHz D Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. st 85044 1 Phoenix, Az. © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 10235 S. 51 St. Suite 100 HVVi Semiconductors, Inc. Confidential PD Pulse Droop POUT =75W,F=1200MHz,1400MHz <0.6 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. HVVi Semiconductors, Inc. For additional information, visit: www.hvvi.com 5/09/08 EG-01-PO08X1 EG-01-PO01X1 10/13/08 1 5/23/08 5/09/08 1 EG-01-PO01X1 1 5/09/081 1 EG-01-PO01X1 dB % dB The innovative Semiconductor Company! The innovative Semiconductor Company! TM HVV1011-040 L-Band Avionics Pulsed Power Transistor HVV1011-035 PRODUCT OVERVIEW 1030-1090MHz, 50!s Pulse, 5% Duty L-Band Avionics Pulsed Power Transistor 1030-1090MHz, 50µs Pulse, 5% Duty for TCAS and Mode-S Applications PACKAGE DIMENSIONS PACKAGE DIMENSIONS DRAIN SOURCE GATE Note: Drawing is not actual size. Note: Drawing is not actual size. HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under HVVi Inc. (HVVi) rights, reserves the right any to make changes information published in this anySemiconductors, HVVi intellectual property including patent rights.toThe HVVi name and logo are document at any time and without notice. This document supersedes and replaces all information trademarks of HVVi Semiconductors, Inc. supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc. HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, Az. 85044 For additional information: Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. For additional information, visit: www.hvvi.com HVVi Semiconductors, Inc. Confidential © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-PO01X6 10/13/08 2 EG-01-PO01X1 5/09/08 2