Silicon Bipolar MMIC 5 GHz Active Double Balanced Mixer/ IF Amp Technical Data IAM-82008 Features • RF-IF Conversion Gain: 15 dB from 0.05-5 GHz • IF Conversion Gain from DC to 2 GHz • IF Output P1dB: +8␣ dBm␣ Typical • Single Polarity Bias Supply: VCC = 7 to 13 V • Load Insensitive Performance • Conversion Gain Flat over Temperature Description Hewlett-Packard's IAM-82008 is a complete moderate-power doublebalanced active mixer housed in a miniature low cost surface mount package. It is designed for narrow or wide bandwidth commercial and industrial applications having RF inputs up to 5 GHz. Operation of RF and LO frequencies below 50 MHz can be achieved using optional external capacitors to ground. The IAM-82008 is particularly well suited for applications that require loadinsensitive conversion gain and good spurious signal suppression and moderate dynamic range with Plastic SO-8 Package low LO power. Typical applications include frequency down-conversion, up-conversion, modulation, demodulation, and phase detection. Markets include fiber-optics, GPS satellite navigation, mobile radio, and communications transmitters and receivers. The IAM series of Gilbert multiplier-based frequency converters is fabricated using Hewlett Packard's 10 GHz fT 25 GHz fMAX ISOSAT™-1 silicon bipolar process. This process uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization, and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability. Functional Block Diagram and Pin Configuration 1 8 2 7 3 6 4 5 Pin Description 1 2 3 4 IF Output Vee, AC Ground Vee, AC Ground Thermal Contact RF Input 7-127 8 7 6 5 RF Ground (optional) VCC LO Ground (optional) LO Input 5965-9112E Absolute Maximum Ratings[1] (TA = 25°C) Parameter 20 Units Value V 15 Vd Device Voltage Pt Total Device Dissipation[2] mW 1200 Pin RF RF Input Power dBm +14 Pin LO LO Input Power dBm +14 Tj Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 °C/W 92 θjc Thermal Resistance Junction to Case[3] Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. 2. Derate at 10.9 mW/°C for TPIN 3 > 40°C. 3. Tj = 150°C. 15 IF = 70 MHz G C (dB) Symbol 10 IF = 2 GHz 5 0 0.1 0.2 0.5 1.0 2.0 5.0 Figure 1. Typical RF to IF Conversion Gain vs. RF Frequency, TA = 25°C, Low Side LO. IAM-82008 Electrical Specifications VCC = 10 V, ZO = 50 Ω, LO = 0 dBm, RF = -20 dBm, TA = 25°C Symbol GC f3 dB RF f3 dB IF P1 dB IP3 NF VSWR Parameter Conversion Gain, RF = 2 GHz, LO = 1.75 GHz Units Minimum Typical Maximum dB 13 15 17 RF Bandwidth (GC 3 dB down), IF = 250 MHz GHz 5.5 IF Bandwidth (GC 3 dB down), LO = 2 GHz GHz 0.5 Output Power at 1 dB Gain Compression, RF = 2 GHz, LO = 1.75 GHz dBm 8 Third Order Inpercept Point, RF = 2 GHz, LO = 1.75 GHz dBm 18 dB 19 SSB Noise Figure RF Port VSWR 1.5:1 LO Port VSWR 2.0:1 IF Port VSWR 2.5:1 RFif RF Feedthrough at IF Port dBc -30 LOif LO Leakage at IF Port dBm -15 LOrf LO Leakage at RF Port dBm -22 ICC Supply Current mA 40 55 65 Note: 1. The recommended operating voltage range for this device is 7 to 13 V. Typical performance as a function of voltage is shown on the following page. 7-128 10 RF FREQUENCY (GHz) 7 3 6 4 5 RF INPUT OPTIONAL LOW FREQUENCIES RF GROUND 20 15 15 C BLOCK OPTIONAL LOW FREQUENCIES LO GROUND 10 75 I CC GC 10 50 LO INPUT 5 5 25 P 1dB Notes: 1. No external baluns are required. 2. Good heatsinking required on Pin 3 for specified performance. 0 0 0 4 20 20 15 15 10 80 LO IF RF 16 GC C G (dB) VSWR 12 IF 2:1 IF P 1dB (dBm) 3:1 10 70 P1dB 5 60 I CC LO 4 5 0 0 -5 -55 50 RF 0 .01 1.0 0.1 1:1 0.1 2.0 IF FREQUENCY, RF-LO (GHz) 1.0 10 40 -25 FREQUENCY (GHz) Figure 4. Typical RF to IF Conversion Gain vs. IF Frequency, TA = 25°C, VCC = 10 V, LO: 0 dBm at 2 GHz. 0 25 85 125 TEMPERATURE (°C) Figure 6. Typical Conversion Gain, IF P1 dB , and ICC Current vs. Case Temperature, TA = 25°C, VCC = 10 V, RF: -20 dBm at 2 GHz, LO: 0 dBm at 1.75 GHz. Figure 5. RF, LO, and IF Port VSWR vs. Frequency, TA = 25°C, VCC = 10 V. 0 16 GC (dB) 14 12 -20 LO to IF -30 -40 -50 -60 0.1 -5 0 5 10 LO to RF HARMONIC LO ORDER RF TO IF (dBc) LO TO RF AND IF (dBm) -10 10 -10 0 Figure 3. Typical Conversion Gain, IF P1 dB , and ICC Current vs. VCC Bias Voltage, TA = 25°C, RF: -20 dBm at 2 GHz, LO: 0 dBm at 1.75 GHz. 4:1 LO = 2 GHz 8 16 RF to IF RF to IF LO to IF LO to RF 1.0 10 FREQUENCY (GHz) LO POWER (dBm) Figure 7. Typical RF to IF Conversion Gain vs. LO Power, TA = 25°C, VCC = 10 V, RF: -10 dBm at 2 GHz, LO: 0 dBm at 1.75 GHz. Figure 8. Typical RF Feedthrough Relative to IF Carrier, LO to RF and LO to IF Leakage vs. Frequency, TA = 25°C, VCC = 10 V, RF: -20 dBm at 2 GHz, LO: 0 dBm at 1.75 GHz. 7-129 0 – 21 40 73 >75 >75 1 12 0 51 60 >75 >75 2 6 22 41 >75 >75 >75 3 24 18 40 74 >75 >75 4 22 33 52 75 >75 >75 5 41 36 55 >75 >75 >75 0 1 2 3 4 5 HARMONIC RF ORDER Xmn = Pif – P(m*rf-n*lo) Figure 9. Harmonic Intermodulation Suppression (dB Below Desired Output) RF at 1 GHz, LO at 0.752 GHz, IF at 0.248 GHz. I CC(mA) 20 HIGH SIDE LO = LOW SIDE LO = 12 8 VCC (V) Figure 2. IAM-82008 Typical Biasing Configuration. GC (dB) 100 V cc = 10 V C BLOCK C BLOCK 20 ICC (mA) 2 C BLOCK IF P 1dB, dBm Vee = 0 V PIN 3 IS ALSO HEATSINK CONTACT 8 C IF OUTPUT 1 G (dB) C BLOCK Part Number Ordering Information Part Number No. of Devices Container IAM-82008-TR1 1000 7" Reel IAM-82008-STR 10 Strip Package Dimensions SO-8 Plastic Package 1.27 (.050) 6x 3.80/4.00 (.1497/.1574) 5.84/6.20 (.230/.244) M820 0.38 ± 0.10 (.015 ± .004) x 45° Pin 1 1.35/1.75 (.0532/.0688) 4.72/5.00 (.186/.197) 0°/8° 0.10 (.004) 0.33/0.51 (.013/.020) 8X 0.19/0.25 (.0075/.0098) 0.10/0.25 (.004/.0098) Note: 1. Dimensions are shown in millimeters (inches). 0.41/1.27 (.016/.050) 7-130 O