IDP18E120 IDB18E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 18 A VF 1.65 V T jmax 150 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2. • Easy paralleling Type Package Ordering Code Marking Pin 1 PIN 2 PIN 3 IDP18E120 P-TO220-2-2. Q67040-S4493 D18E120 C A - IDB18E120 P-TO220-3.SMD Q67040-S4387 D18E120 NC C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 1200 V Continous forward current IF A TC=25°C 31 TC=90°C 19.8 Surge non repetitive forward current I FSM 78 I FRM 47 TC=25°C, tp=10 ms, sine halfwave Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 Power dissipation W Ptot TC=25°C 113 TC=90°C 54 Operating and storage temperature Soldering temperature Tj , Tstg TS 1.6mm(0.063 in.) from case for 10s Rev.2 Page 1 -55...+150 260 °C °C 2003-07-31 IDP18E120 IDB18E120 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1.1 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area 1) - 35 - K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Reverse leakage current IR µA V R=1200V, T j=25°C - - 100 V R=1200V, T j=150°C - - 1400 Forward voltage drop VF V IF=18A, T j=25°C - 1.65 2.15 IF=18A, T j=150°C - 1.7 - 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2 Page 2 2003-07-31 IDP18E120 IDB18E120 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Reverse recovery time ns t rr V R=800V, IF=18A, diF/dt=800A/µs, Tj =25°C - 195 - V R=800V, IF=18A, diF/dt=800A/µs, Tj =125°C - 280 - V R=800V, IF=18A, diF/dt=800A/µs, Tj =150°C - 300 - Peak reverse current A I rrm V R=800V, IF = 18 A, di F/dt=800A/µs, T j=25°C - 20.2 - V R=800V, IF =18A, diF/dt=800A/µs, Tj=125°C - 24.4 - V R=800V, IF =18A, diF/dt=800A/µs, Tj=150°C - 25.3 - Reverse recovery charge nC Q rr V R=800V, IF=18A, diF/dt=800A/µs, Tj =25°C - 1880 - V R=800V, IF =18A, diF/dt=800A/µs, Tj=125°C - 3200 - V R=800V, IF =18A, diF/dt=800A/µs, Tj=150°C - 3540 - V R=800V, IF=18A, diF/dt=800A/µs, Tj =25°C - 5.5 - V R=800V, IF=18A, diF/dt=800A/µs, Tj =125°C - 6.6 - V R=800V, IF=18A, diF/dt=800A/µs, Tj =150°C - 6.7 - Reverse recovery softness factor Rev.2 S Page 3 2003-07-31 IDP18E120 IDB18E120 1 Power dissipation 2 Diode forward current Ptot = f (TC) IF = f(TC) parameter: Tj ≤ 150°C parameter: Tj≤ 150°C 35 120 W A 100 25 80 IF P tot 90 70 20 60 15 50 40 10 30 20 5 10 0 25 50 75 100 0 25 150 °C 50 75 100 150 °C TC TC 3 Typ. diode forward current 4 Typ. diode forward voltage IF = f (VF) VF = f (Tj) 54 2.6 A V -55°C 25°C 100°C 150°C 42 36A 2.2 IF VF 36 2 30 18A 24 1.8 18 1.6 12 9A 1.4 6 0 0 0.5 1 1.5 2 1.2 -60 3 V VF Rev.2 Page 4 -20 20 60 100 °C Tj 160 2003-07-31 IDP18E120 IDB18E120 5 Typ. reverse recovery time 6 Typ. reverse recovery charge trr = f (diF/dt) Qrr =f(diF/dt) parameter: V R = 800V, T j = 125°C parameter: VR = 800V, Tj = 125 °C 1000 4600 nC ns 36A 4200 800 4000 36A 18A 9A Q rr 3800 trr 700 3600 18A 3400 600 3200 500 3000 2800 400 2600 300 9A 2400 2200 200 2000 100 200 300 400 500 600 700 800 1800 200 A/µs 1000 di F/dt 300 400 500 600 700 800 A/µs 1000 di F/dt 7 Typ. reverse recovery current 8 Typ. reverse recovery softness factor Irr = f (diF/dt) S = f(diF /dt) parameter: V R = 800V, T j = 125°C parameter: VR = 800V, Tj = 125°C 30 18 36A 18A 9A 14 20 S Irr A 36A 18A 9A 12 10 15 8 6 10 4 5 200 Rev.2 300 400 500 600 700 800 A/µs 1000 di F/dt Page 5 2 200 300 400 500 600 700 800 A/µs 1000 di F/dt 2003-07-31 IDP18E120 IDB18E120 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T 10 1 IDP18E120 K/W ZthJC 10 0 10 -1 10 -2 D = 0.50 0.20 10 0.10 -3 0.05 single pulse 0.02 10 -4 10 -5 -7 10 0.01 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Rev.2 Page 6 2003-07-31 IDP18E120 IDB18E120 TO-220-2-2 N A P dimensions [mm] symbol E D U H B V F W X J L max min max A 9.70 10.10 0.3819 0.3976 B 15.30 15.90 0.6024 0.6260 C 0.65 0.85 0.0256 0.0335 D 3.55 3.85 0.1398 0.1516 E 2.60 3.00 0.1024 0.1181 F 9.00 9.40 0.3543 0.3701 G 13.00 14.00 0.5118 0.5512 H 17.20 17.80 0.6772 0.7008 J 4.40 4.80 0.1732 0.1890 K 0.40 0.60 0.0157 0.0236 L 1.05 typ. M 2.54 typ. 0.1 typ. N 4.4 typ. 0.173 typ. P G T C Rev.2 M 1.10 1.40 0.41 typ. 0.0433 0.0551 2.4 typ. 0.095 typ. 0.26 typ. U 6.6 typ. V 13.0 typ. 0.51 typ. W 7.5 typ. 0.295 typ. X T [inch] min 0.00 0.40 0.0000 0.0157 K Page 7 2003-07-31 IDP18E120 IDB18E120 TO-220-3-45 (P-TO220SMD) dimensions [mm] symbol min A max B 0.3858 0.3937 0.0512 typ. C 1.25 0.0492 D 0.95 1.15 2.54 typ. 0.0374 0.0453 0.1 typ. G 0.72 0.85 5.08 typ. 0.0283 0.0335 0.2 typ. H 4.30 4.50 0.1693 K 1.28 1.40 0.0504 0.0551 L 9.00 9.40 0.3543 0.3701 M N 2.30 2.50 14.1 typ. 0.0906 0.0984 0.5551 typ. P 0.00 0.0000 Q R 3.30 3.90 8° max 0.1299 0.1535 8° max S 1.70 0.0669 T U 0.50 0.65 10.8 typ. 0.0197 0.0256 0.4252 typ. V 1.35 typ. 0.0532 typ. W 6.43 typ. 0.2532 typ. X 4.60 typ. 0.1811 typ. Y 9.40 typ. 0.3701 typ. Z 16.15 typ. 0.6358 typ. F Page 8 min 9.80 10.00 1.3 typ. E Rev.2 [inch] max 1.75 0.20 2.50 0.0689 0.1772 0.0079 0.0984 2003-07-31 IDP18E120 IDB18E120 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2 Page 9 2003-07-31