IDP23E60 Fast Switching Diode Product Summary Features • 600 V diode technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 23 A VF 1.5 V T jmax 175 °C PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Qualified according to JEDEC for target applications Type Package IDP23E60 PG-TO220-2 Ordering Code - Marking Pin 1 PIN 2 PIN 3 D23E60 C A - Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Repetitive peak reverse voltage VRRM Continous forward current IF Value 600 V A TC=25°C 41 TC=90°C 28 Surge non repetitive forward current Unit I FSM 89 I FRM 65 TC=25°C, tp=10 ms, sine halfwave Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 Ptot Power dissipation W TC=25°C 115 TC=90°C 65 Tj , Tstg TS Operating and storage temperature Soldering temperature -55... +175 260 °C °C wavesoldering, 1.6mm (0.063 in.) from case for 10s Rev.2.4 Page 1 2009-09-28 IDP23E60 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 1.3 - - 75 - - 50 Characteristics Thermal resistance, junction - case RthJC SMD version, device on PCB: RthJA @ min. footprint @ 6 cm 2 cooling area 1) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics IR Reverse leakage current μA V R=600V, Tj=25°C - - 50 V R=600V, Tj=150°C - - 1900 VF Forward voltage drop V IF=23A, T j=25°C - 1.5 2 IF=23A, T j=150°C - 1.5 - 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 μm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.4 Page 2 2009-04-28 IDP23E60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics t rr Reverse recovery time ns V R=400V, IF=23A, diF/dt=1000A/μs, Tj=25°C - 120 - V R=400V, IF=23A, diF/dt=1000A/μs, Tj=125°C - 164 - V R=400V, IF=23A, diF/dt=1000A/μs, Tj=150°C - 170 - I rrm Peak reverse current A V R=400V, IF = 23A, diF/dt=1000A/μs, Tj =25°C - 17 - V R=400V, IF =23A, diF/dt=1000A/μs, T j=125°C - 19.5 - V R=400V, IF =23A, diF/dt=1000A/μs, T j=150°C - 21.5 - Q rr Reverse recovery charge nC V R=400V, IF=23A, diF/dt=1000A/μs, Tj=25°C - 970 - V R=400V, IF =23A, diF/dt=1000A/μs, T j=125°C - 1580 - V R=400V, IF =23A, diF/dt=1000A/μs, T j=150°C - 1770 - V R=400V, IF=23A, diF/dt=1000A/μs, Tj=25°C - 4.4 - V R=400V, IF=23A, diF/dt=1000A/μs, Tj=125°C - 4.8 - V R=400V, IF=23A, diF/dt=1000A/μs, Tj=150°C - 5 - S Reverse recovery softness factor Rev.2.4 Page 3 2009-09-28 IDP23E60 1 Power dissipation 2 Diode forward current Ptot = f (TC) IF = f(TC) parameter: Tj ≤ 175 °C parameter: Tj≤ 175°C 45 120 A W 35 30 IF P tot 90 75 25 60 20 45 15 30 10 15 0 25 5 50 75 100 125 0 25 175 °C 50 75 100 125 TC 175 °C TC 3 Typ. diode forward current 4 Typ. diode forward voltage IF = f (VF) VF = f (Tj) 2 70 V 46A A 1.8 1.7 VF IF 50 -55°C 25°C 100°C 150°C 40 1.6 23A 1.5 30 1.4 1.3 20 11,5A 1.2 10 1.1 0 0 0.5 1 1.5 1 -60 2.5 V VF Rev.2.4 Page 4 -20 20 60 100 160 °C Tj 2009-09-28 IDP23E60 5 Typ. reverse recovery time 6 Typ. reverse recovery charge trr = f (diF/dt) Qrr =f(diF/dt) parameter: V R = 400V, T j = 125°C parameter: VR = 400V, Tj = 125 °C 2100 500 46A nC ns 1900 1800 46A 23A 11.5A 350 1700 Qrr trr 400 23A 1600 1500 300 1400 1300 250 1200 200 11.5A 1100 1000 150 900 100 200 300 400 500 600 700 800 800 200 A/μs 1000 di F/dt 300 400 500 600 700 800 A/μs 1000 diF/dt 7 Typ. reverse recovery current 8 Typ. reverse recovery softness factor Irr = f (diF/dt) S = f(diF /dt) parameter: V R = 400V, T j = 125°C parameter: VR = 400V, Tj = 125°C 24 13 A 20 10 S 18 Irr 11 46A 23A 11.5A 16 14 8 12 7 10 6 8 5 6 4 4 200 Rev.2.4 300 400 500 600 700 800 3 200 A/μs 1000 di F/dt Page 5 46A 23A 11.5A 9 300 400 500 600 700 800 A/μs 1000 diF/dt 2009-09-28 IDP23E60 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T 10 1 IDP23E60 K/W ZthJC 10 0 10 -1 D = 0.50 10 -2 0.20 0.10 0.05 single pulse 0.02 10 -3 0.01 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Rev.2.4 Page 6 2009-09-28 IDP23E60 Outline drawing: TO220-2-1 Rev.2.4 Page 7 2009-09-28 IDP23E60 Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.4 Page 8 2009-09-28